TSUBAKI Kotaro

Last updated: Jun 24, 2016 at 19:05
 
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Name
TSUBAKI Kotaro
Affiliation
Toyo University
Section
Faculty of Information Sciences and Arts, Department of Information Sciences and Arts
Job title
Professor
Degree
Doctor of Engineering(Hokkaido University)
Research funding number
10360166

Research Interests

 
 

Research Areas

 
 

Academic & Professional Experience

 
Apr 2009
 - 
Today
Professor, Faculty of Information Sciences and Arts, Toyo University
 
Apr 1978
 - 
Sep 2002
Basic Resaerch Laboratories, NTT
 
Oct 2002
 - 
Mar 2009
Professor, Faculty of Engineering, Toyo University
 

Education

 
 
 - 
1978
Physics, Graduate School, Division of Science, The University of Tokyo
 
 
 - 
1976
Physics, Faculty of Science, The University of Tokyo
 

Published Papers

 
The portable particle-size-measurements-system by introducing the comsumer-use camera
TSUBAKI Kotaro
Chemical Engineering   60(9) 667-674   Sep 2015   [Invited]
'Two-dimensional electron gas transport properties in AlGaN/GaN heterostructure field-effect transistors designed for high-power applications'
Optical Materials   23(1-2) 211-217   2003
'Nanoparticle Induced Multi-Functionalization of Silicon, A Plug and Play Approach'
Applied Surface Socience.   190(1-4) 161-165   2002
'Gate voltage dependence of subband structure in a two-dimensional electron gas in AlGaN/GaN heterostructures'
Physica E   13 1111-1113   2002
'Two-dimensional Electron Gas Transport Properties in AlGaN/GaN HFETs with high Al compositions'
Inst. Phys. Conf. Ser.   170 107-112   2002
'Spin-splitting in modulation-doped AlGaN/GaN two-dimensional electron gas'
Appl. Phys. Lett.   80(17) 3126-3128   2002
'Two-dimensional Electron Gas Transport Properties in AlGaN/GaN Heterostructure Field Effect Transistor'
Material Science&Engineering B   B82 232-237   2001
'High-Temperature Electron Transport Properties in AlGaN/GaN Heterostructure Field Effect Transistor'
Appl. Phys. Lett.   79 1634-1636   2001
'AlGaN/GaN Heterostructure Field Effect Transistor with High Al Compositions Fabricated with Selective Area Regrowth'
Physica Status Solidi. (a)   188(1) 223-226   2001
'High-Temperature Electron Transport Properties in AlGaN/GaN Heterostructure Field Effect transistor'
Material Research Soc.   639 G11.14   2001
'Aharonov-Bohm Oscillation in Rings with Permalloy'
Jpn. J. Appl. Phys.   40(3B) 1902-1905   2001
'Electron transport properties in AlGaN/GaN heterostructure field effect transistors at high electron densities'.
IPAP Conf. Ser.   1 953-956   2000
'Enhanced effect of polarization on electron transport properties in AlGaN/GaN Double-heterostructure Field Effect Transistors'
Appl.Phys. Lett.   76(21) 3118-3120   2000
'Two-dimensional Electron Gas Transport Properties in AlGaN/(In)GaN/AlGaN Double-heterostructure Field Effect Transistor'
Material Research Soc.   595 W4.7.1   2000
'Quantized magnetotransport through magnetic barrier systems'
Inst. Phys. Conf. Ser.   no.162 Chap.7 pp.373-378    1999
'Enhanced electron mobility in AlGaN/InGaN/AlGaN double-heterostructures by piezoelectric effect'
Jpn. j. Appl. Phys.   38(7B) L799-L801   1999
'Superior pinch-off characteristics at 400 C in AlGaN/GaN heterostructures field effect transistor'
Jpn. J. Appl. Phys.   38(9A/B) L987-989   1999
'Enhanced two-dimensional electron gas confinement effect on transport properties in AlGaN/InGaN/AlGaN double-heterostructures'
Physica Status Solidi. (b)   216(1) 727-731   1999
'Observation of shot noise suppression at the peaks of Coulomb oscillations'
Solid-State Electronics   42(7-8) 1429-1431   1998
'Longitudinal magnetoresistance in magnetic barrier system'
Physica B   456-458 392-396   1998
'Noninvasive determination of the ballistic-electron current distribution'
Phys. Rev. B   54(3) 1947-1952   1996
'Electron wave interference in Mach-Zehnder channels'
Inst. Phys. Conf. Ser.   no.129 Chap.5 pp.293-298    1993
'Ballistic transport and low-frequency noise in high mobility two-dimensional electron systems'
Inst. Phys. Conf. Ser.   no.127 Chap.4 pp.127-132    1993
'Density of states of AlAs/GaAs fractional layer superlattice quantum wires in a modulation doped structure'
Surface Science   267 270-273   1992
'Fractional superlattices grown by MOCVD and their device applications'
Surface Science   267 588-592   1992
'Aharonov-Bohm effect under high magnetic field in a Corbino disk anti-dot channel'
Surface Science   263 392-395   1992
'Electron wave interference in fractional layer superlattice(FLS)quantum wires'
Inst. Phys. Conf. Ser.   no.120 Chap.12 pp.619-624    1992
'Low-frequency noise in very high mobility modulation-doped structures'
Appl. Phys. Lett.   61(24) 2926-2928   1992
'Electron wave interference device with fractional layer superlattices'
Appl. Phys. Lett.   58(4) 376-378   1991
'Carrier concentration in quantum wires fabricated by reactive ion beam etching'
Jpn. J. Appl. Phys   30(10) 2455-2458   1991
'Electronic state of AlAs/GaAs vertical superlattice in modulation doped structure'
Inst. Phys. Conf. Ser.   no.106 Chap.11 pp.869-875    1990
'Mobility modulation on a modulation-doped structure with an AlAs/GaAs with a fractional layer superlattice'
Appl. Phys. Lett.   57(8) 804-806   1990
'Electron wave interference device with vertical superlattices working in large current region'
Electronics Letters   25(11) 728-729   1989
'Suppression of acoustic phonon scattering in two-dimensional electron-gas on(InAs)1(GaAs)1/InP heterointerfaces'
Appl. Phys. Lett.   54(24) 2414-2416   1989
'Coherence length in quantum interference devices having periodic potential'
Appl. Phys Lett.   53(10) 859-861   1988
'Coherence length in quantum interference devices having periodic potential'
JSAP-MRS INT'l. Conf. on Elec. Mats   99-102   1988
'New Field-effect transistor with quantum wire and modulation-doped heterostructures'
Electronics Letters   24(20) 1267-1268   1988
'Device characterization of p-channel AlGaAs/GaAs MIS-like heterostructure FET's'
IEEE Electron. Dev.   ED-34(12) 2399-2404   1987
'Conductivity oscillation due to quantum interference in a proposed wash-board transistor'
Appl. Phys. Lett.   51(22) 1807-1808   1987
'Magnetoresistance of n-AlGaAs/GaAs two-dimensional electron gas thin wire'
Surface Science   170 33-37   1986
'Origin of persistent photoconductivity in n-InP/GaInAs two-dimensional electron gas'
J. Appl/ Phys.   60(9) 3224-3226   1986
'Temperature dependence of two-dimensional hole gas in modulation-doped p-AlxGa1-xAs/GaAs heterojunctions'
J. Appl. Phys.   59(10) 3527-3531   1986
'A p-channel AlGaAs/GaAs MIS-like heterostructure FET employing two dimensional hole gas'
Surface Science   174 378-380   1986
'Far-infrared magnetoabsorption study of electron systems Ga0.47In0.53As-InP heterojunctions'
Phys. Rev. B   32(12) 8078-8084   1985
'Electron mobility limits of two-dimensional electron gas in n-AlGaAs/GaAs at low temperature'
J. Appl. Phys.   57(12) 5354-5358   1985
'Warm electron system in the n-AlGaAs/GaAs two-dimensional electron gas'
Appl. Phys. Lett.   46(8) 764-766   1985
'High field electron transport in n-InP/GaInAs two-dimensional electron gas'
Appl. Phys. Lett.   46(9) 875-877   1985
'Selectively-doped GaAs/n-AlGaAs heterostructures grown by MOCVD'
Jpn. J. Appl. Phys.   23(9) 1176-1181   1984
'Spatially modulated photoconductivity at N-AlGaAs/GaAs heterojunctions and Formation of persistent charge patterns with submicron dimensions'
Appl. Phys. Lett.   45(6) 663-665   1984
'Phase equilibria in the Cu-Ga-S-Sn system'
J.Electronic Materials   12(1) 43-59   1983
'Differential negative resistance caused by inter-subband scattering in a 2-dimensional electron gas'
Solid State Comm.   46(7) 517-520   1983
'Heat treatment of n-type InP in controlled phosphorus vapor'
Jpn. J. Appl. Phys.   19(6) 1185-1186   1980
'Heat treatment of Zn-doped p-type InP'
Jpn. J. Appl. Phys.   19(9) 1789-1790   1980
'Surface damage in InP induced during SiO2 deposition by RF sputtering'
Jpn. J. Appl. Phys.   18(6) 1191-1192   1979
'Electron traps in n-InP grown by the synthesis solute-diffusion method'
Electron. Lett.   15(17) 513-515   1979

Conference Activities & Talks

 
Measurements of fine-particle-size using the image processing of laser diffraction image
TSUBAKI Kotaro
20th Microoptics Conference   25 Oct 2015   
The fine-particle-size-measurement by using the image processing of laser diffraction image
TSUBAKI Kotaro
JSAP Spring Meeting, 2015   11 Mar 2015   
The particle-size-measurement-system based on the laser diffraction analysis
TSUBAKI Kotaro
17 Mar 2014   
Room-temperature ferromagnetic behavior in electride 12Ca・7Al2O3
TSUBAKI Kotaro
The MAR14 Meeting of American Physical Society   3 Mar 2014   
Room-temperature ferromagnetism in electride C12A7
TSUBAKI Kotaro
16 Sep 2013   

Research Grants & Projects

 
Development of the embedded particle size measurement system
Japan Science and Technology Agency: Matching planner program
Project Year: Jun 2016 - Mar 2017    Investigator(s): TSUBAKI Kotaro
Transport Properties of GaN 2DEG
JST Basic Research Programs (Core Research for Evolutional Science and Technology :CREST)
Project Year: 1998 - 2005
Magnetically controlled quantum solid-state physics
Basic Science Research Program
Project Year: 1995 - 2003
Transport Properties of Carbon nanotube
0098 (Japanese Only)
Project Year: 2003   

Social Contribution

 
The portable particle-size-measurement system
[Presenter]  Japan Science and Technology Agency  Inovation Japan 2015  27 Aug 2015 - 28 Aug 2015