Masanori Tsukuda - My portal

Profile Information

Affiliation: Graduate School of Life Science and Systems Engineering Department of Biological Functions Engineering, Kyushu Institute of Technology

Degree: 博士（工学）(九州工業大学)

J-GLOBAL ID: 201401064740804169
researchmap Member ID: B000235602

Research Interests

Research Areas

Manufacturing technology (mechanical, electrical/electronic, chemical engineering) / Electronic devices and equipment / Power electronics

Research History

Jan, 2019 - Present

Associate Professor, Graduate School of Life Science and Systems Engineering, Kyushu Institute of Technology
Oct, 2015 - Present

北九州市環境エレクトロニクス研究所
Apr, 2015 - Sep, 2015

北九州市
Oct, 2014 - Mar, 2015

アジア成長研究所
Mar, 2010 - Sep, 2014

The International Centre for the Study of East Asian Development
Apr, 1991 - Feb, 2010

TOSHIBA CORPORATION

Education

Oct, 2010 - Jun, 2013

Kyushu Institute of Technology

Awards

Sep, 2017

2018 IEEE Transactions on Power Electronics Prize Letter Award, A New Output Current Measurement Method With Tiny PCB Sensors Capable of Being Embedded in an IGBT Module, IEEE Power Electronics Society

Kazunori Hasegawa, Satoru Takahara, Shoji Tabata, Masanori Tsukuda, Ichiro Omura
Apr, 2005

The 2005 International Power Electronics Conference（IPEC-Niigata） Prize Paper Award, Demonstration of High Output Power Density （30 W／cc） Converter using 600 V SiC-SBD and Low Impedance Gate Driver, THE INSTITUTE OF ELECTRICAL ENGINEERS OF JAPAN

Masanori Tsukuda

Papers

Envelop tracking based embedded current measurement for monitoring of IGBT and power converter system

Bat-Ochir Bat-Otgon, Bayarkhuu Battuvshin, Hasegawa Kazunori, Tsukuda Masanori, Dugarjav Bayasgalan, Omura Ichiro

MICROELECTRONICS RELIABILITY, 88-90 500-504, Sep, 2018 Peer-reviewed
A fully digital feedback control of gate driver for current balancing of parallel connected power devices.

Array,Masanori Tsukuda, Ichiro Omura

Microelectronics Reliability, 88-90 505-509, 2018 Peer-reviewed
Bias voltage criteria of gate shielding effect for protecting IGBTs from shoot-through phenomena.

Masanori Tsukuda, Seiya Abe, Kazunori Hasegawa, Tamotsu Ninomiya, Ichiro Omura

Microelectronics Reliability, 88-90 482-485, 2018 Peer-reviewed
Clamp type built-in current sensor using PCB in high-voltage power modules

M. Tsukuda, K. Nakashima, S. Tabata, K. Hasegawa, I. Omura

MICROELECTRONICS RELIABILITY, 76 517-521, Sep, 2017 Peer-reviewed
Modelling of the shoot-through phenomenon introduced by the next generation IGBT in inverter applications

S. Abe, K. Hasegawa, M. Tsukuda, K. Wada, I. Omura, T. Ninomiya

MICROELECTRONICS RELIABILITY, 76 465-469, Sep, 2017 Peer-reviewed
General-Purpose Clocked Gate Driver IC With Programmable 63-Level Drivability to Optimize Overshoot and Energy Loss in Switching by a Simulated Annealing Algorithm

Koutarou Miyazaki, Seiya Abe, Masanori Tsukuda, Ichiro Omura, Keiji Wada, Makoto Takamiya, Takayasu Sakurai

IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS, 53(3) 2350-2357, May, 2017 Peer-reviewed
Micro PCB Rogowski coil for current monitoring and protection of high voltage power modules

M. Tsukuda, M. Koga, K. Nakashima, I. Omura

MICROELECTRONICS RELIABILITY, 64 479-483, Sep, 2016 Peer-reviewed
Failure analysis of power devices based on real-time monitoring

A. Watanabe, M. Tsukuda, I. Omura

MICROELECTRONICS RELIABILITY, 55(9-10) 2032-2035, Aug, 2015 Peer-reviewed
High-throughput and full automatic DBC-module screening tester for high power IGBT

M. Tsukuda, H. Tomonaga, S. Okoda, R. Noda, K. Tashiro, I. Omura

MICROELECTRONICS RELIABILITY, 55(9-10) 1363-1368, Aug, 2015 Peer-reviewed
16-Channel micro magnetic flux sensor array for IGBT current distribution measurement

H. Tomonaga, M. Tsukuda, S. Okoda, R. Noda, K. Tashiro, I. Omura

MICROELECTRONICS RELIABILITY, 55(9-10) 1357-1362, Aug, 2015 Peer-reviewed
Short-circuit protection for an IGBT with detecting the gate voltage and gate charge

K. Hasegawa, K. Yamamoto, H. Yoshida, K. Hamada, M. Tsukuda, I. Omura

MICROELECTRONICS RELIABILITY, 54(9-10) 1897-1900, Sep, 2014 Peer-reviewed
Structure oriented compact model for advanced trench IGBTs without fitting parameters for extreme condition: Part II

J. Takaishi, S. Harada, M. Tsukuda, I. Omura

MICROELECTRONICS RELIABILITY, 54(9-10) 1891-1896, Sep, 2014 Peer-reviewed
Internal degradation monitoring of power devices during power cycling test

Akihiko Watanabe, Masanori Tsukuda, Ichiro Omura

International Conference on Integrated Power Electronics Systems, 213-217, Feb, 2014 Peer-reviewed
High-throughput DBC-assembled IGBT screening for power module

Masanori Tsukuda, Seiichi Okoda, Ryuzo Noda, Katsuji Tashiro, Ichiro Omura

International Conference on Integrated Power Electronics Systems, 25-30, Feb, 2014 Peer-reviewed
Real Time Monitoring System for Internal Process to Failure of High Power IGBT

Watanabe, M. Tsukuda, I. Omura

Solid State Devices and Materials, 1692-1696, Sep, 2013 Peer-reviewed
Real time degradation monitoring system for high power IGBT module under power cycling test

Akihiko Watanabe, Masanori Tsukuda, Ichiro Omura

MICROELECTRONICS RELIABILITY, 53(9-11) 1692-1696, Sep, 2013 Peer-reviewed
Sub-micron Junction Termination for 1200V Class Devices toward CMOS Process Compatibility

Kota Seto, Junpei Takaishi, Hironori Imaki, Masahiro Tanaka, Masanori Tsukuda, Ichiro Omura

2013 25TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD), 281-284, 2013 Peer-reviewed
High Speed Turn-on Gate Driving for 4.5kV IEGT without Increase in PiN Diode Recovery Current

Yamato Miki, Makoto Mukunoki, Takashi Matsuyoshi, Masanori Tsukuda, Ichiro Omura

2013 25TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD), 347-350, 2013 Peer-reviewed
Scattering parameter approach to power MOSFET design for EMI”, Proc. of ISPSD

M. Tsukuda, K. Kawakami, I. Omura

The International Symposium on Power Semiconductor Devices and ICs, 181-184, Jun, 2012 Peer-reviewed
Universal Trench Edge Termination Design

Kota Seto, Ryu Kamibaba, Masanori Tsukuda, Ichiro Omura

2012 24TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD), 161-164, 2012 Peer-reviewed

Misc.

Development of a New Output Current Sensing System Using a PCB Rogoswki Coil for a PWM Inverter

肖駿, 長谷川一徳, 一木真生, 大村一郎, 附田正則, 嘉藤徹

電気学会研究会資料. EDD = The papers of technical meeting on electron devices, IEE Japan, 2018(61) 1-5, Nov 2, 2018
Development of a New Output Current Sensing System Using a PCB Rogoswki Coil for a PWM Inverter

肖駿, 長谷川一徳, 一木真生, 大村一郎, 附田正則, 嘉藤徹

電気学会研究会資料. SPC = The papers of technical meeting on semiconductor power converter, IEE Japan, 2018(155) 1-5, Nov 2, 2018
Development of a New Output Current Sensing System Using a PCB Rogoswki Coil for a PWM Inverter.

肖駿, 長谷川一徳, 一木真生, 大村一郎, 附田正則, 嘉藤徹

電気学会研究会資料, (EDD-18-061-070/SPC-18-155-164) 1‐5, Nov 1, 2018
Development of Fast Short Circuit Protection System for Advanced IGBT

一木真生, 有元貴昭, 安部征哉, 大村一郎, 附田正則

電気学会研究会資料, (EDD-18-049-052.054-060/SPC-18-143-146.148-154) 41‐44, Nov 1, 2018
Development of Fast Short Circuit Protection System for Advanced IGBT

一木真生, 有元貴昭, 安部征哉, 大村一郎, 附田正則

電気学会研究会資料. SPC = The papers of technical meeting on semiconductor power converter, IEE Japan, 2018(143) 41-44, Nov 1, 2018
Development of Fast Short Circuit Protection System for Advanced IGBT

一木真生, 有元貴昭, 安部征哉, 大村一郎, 附田正則

電気学会研究会資料. EDD = The papers of technical meeting on electron devices, IEE Japan, 2018(49) 41-44, Nov 1, 2018
パワーエレクトロニクスとLSIの異分野連携:IGBT向けデジタルゲートドライバIC

高宮真, 宮崎耕太郎, 崔通, 小原秀嶺, 萬年智介, 和田圭二, 附田正則, 安部征哉, 大村一郎, 桜井貴康

電子情報通信学会大会講演論文集(CD-ROM), 2018 ROMBUNNO.CI‐3‐4, Aug 28, 2018
Proposal of New Screening Method of Power Modules based on Current Distribution

附田正則, 結城大介, 朝長大貴, 金亨燮, 大村一郎

電気学会研究会資料. EDD = The papers of technical meeting on electron devices, IEE Japan, 2017(74) 53-58, Nov 21, 2017
Proposal of New Screening Method of Power Modules based on Current Distribution

附田正則, 結城大介, 朝長大貴, 金亨燮, 大村一郎

電気学会研究会資料. SPC = The papers of technical meeting on semiconductor power converter, IEE Japan, 2017(173) 53-58, Nov 21, 2017
Investigation of Epitaxial Wafer Evaluation Accuracy with Microwave Photoconductivity Decay

真辺航, 大村一郎, 附田正則

電気学会電子デバイス研究会資料, EDD-17(52-65.67-73) 7‐11, Nov 20, 2017
Proposal of New Screening Method of Power Modules based on Current Distribution

附田正則, 結城大介, 朝長大貴, KIM Hyoungseop, 大村一郎

電気学会電子デバイス研究会資料, EDD-17(74-86) 53‐58, Nov 20, 2017
Development of a New Inverter-Current Measurement System Integrated in a Power Module

田畑勝次, 長谷川一徳, 一木真生, 大村一郎, 附田正則, 附田正則

電気学会電子デバイス研究会資料, EDD-17(52-65.67-73) 63‐67, Nov 20, 2017
Investigation of Epitaxial Wafer Evaluation Accuracy with Microwave Photoconductivity Decay

真辺航, 大村一郎, 附田正則

電気学会研究会資料. EDD = The papers of technical meeting on electron devices, IEE Japan, 2017(52) 7-11, Nov 20, 2017
Development of a New Inverter-Current Measurement System Integrated in a Power Module

田畑勝次, 長谷川一徳, 一木真生, 大村一郎, 附田正則

電気学会研究会資料. EDD = The papers of technical meeting on electron devices, IEE Japan, 2017(52) 63-67, Nov 20, 2017
Investigation of Epitaxial Wafer Evaluation Accuracy with Microwave Photoconductivity Decay

真辺航, 大村一郎, 附田正則

電気学会研究会資料. SPC = The papers of technical meeting on semiconductor power converter, IEE Japan, 2017(151) 7-11, Nov 20, 2017
Development of a New Inverter-Current Measurement System Integrated in a Power Module

田畑勝次, 長谷川一徳, 一木真生, 大村一郎, 附田正則

電気学会研究会資料. SPC = The papers of technical meeting on semiconductor power converter, IEE Japan, 2017(151) 63-67, Nov 20, 2017
Development of Gate Drive and Control Circuits Using Programmable Gate Driver IC for IGBT Module

小原秀嶺, 秋山寿夫, 和田圭二, 附田正則, 大村一郎, 宮崎耕太郎, 高宮真, 桜井貴康

電気学会産業応用部門大会(CD-ROM), 2017 ROMBUNNO.1‐82, Aug 29, 2017
A New Output Current Measurement Method With Tiny PCB Sensors Capable of Being Embedded in an IGBT Module

Kazunori Hasegawa, Satoru Takahara, Shoji Tabata, Masanori Tsukuda, Ichiro Omura

IEEE TRANSACTIONS ON POWER ELECTRONICS, 32(3) 1707-1712, Mar, 2017
High-performance vertical Si PiN diode by hole remaining mechanism

Masanori Tsukuda, Akiyoshi Baba, Yuji Shiba, Ichiro Omura

SOLID-STATE ELECTRONICS, 129 22-28, Mar, 2017
A New Output Current Measurement Method With Tiny PCB Sensors Capable of Being Embedded in an IGBT Module

Kazunori Hasegawa, Satoru Takahara, Shoji Tabata, Masanori Tsukuda, Ichiro Omura

IEEE TRANSACTIONS ON POWER ELECTRONICS, 32(3) 1707-1712, Mar, 2017

Presentations

Development of scale down testbed for high voltage power device

Jan 24, 2013
Development of scale down testbed for high voltage power device

MATSUYOSHI TAKASHI, TSUKUDA MASANORI, HIRAI HIDETOSHI, OMURA ICHIRO

電子情報通信学会技術研究報告, Jan 17, 2013
PiNダイオードの逆回復時高周波振動の検討

川神圭一朗, 附田正則, 高濱健一, 大村一郎

電気学会研究会資料. SPC, 半導体電力変換研究会, Oct 27, 2011
Dynamic Punch-Through Design of High-Voltage Diode for Suppression of Waveform Oscillation

TSUKUDA MASANORI, SAKIYAMA YOKO, NINOMIYA HIDEAKI, YAMAGUCHI MASAKAZU

電気学会電子材料研究会資料, Oct 29, 2009
Critical IGBT Design Regarding EMI and Switching Losses

Tsukuda Masanori, Omura Ichiro, Sakiyama Yoko, Yamaguchi Masakazu, Matsushita Ken'ichi, Ogura Tsuneo

IEICE technical report. Electron devices, Oct 16, 2008
1200V系Si‐IGBTと1200V系SiC‐SBDによる2レベル三相インバータの損失予測

附田正則, 大村一郎, 斉藤渉, 土門知一, 山口正一

電気学会全国大会講演論文集, Mar 17, 2005
600V‐SiC‐SBDを用いた超高パワー密度(30W/cc)チョッパ変換器の実証

附田正則, 大竹一郎, 土門知一, 斎藤渉, 小倉常雄

電気学会産業応用部門大会講演論文集, Sep 14, 2004
600V‐SiC‐SBDを用いた300Wチョッパ変換器の体積予測

附田正則, 大村一郎, 斎藤渉, 土門知一, 小倉常雄

電気学会全国大会講演論文集, Mar 17, 2004
Low Power Loss Competence for Chopper Circuit using 600V-SiC-SBD

TSUKUDA MASANORI, OMURA ICHIRO, SAITO WATARU, DOMON TOMOKAZU, OGURA TSUNEO

電気学会半導体電力変換研究会資料, Jan 31, 2004
高耐圧パワーMOSFETの数MHzスイッチング動作検討

附田正則, 大村一郎, 土門知一, 斎藤渉, 小倉常雄

電気学会産業応用部門大会講演論文集, Aug 26, 2003
プレーナ型4HSiC‐SITの試作・評価

水上誠, 滝川修, 室岡三千男, 今井聖支, 木下浩三, 畠山哲夫, 附田正則, 斎藤渉, 四戸孝

電気学会全国大会講演論文集, Mar 17, 2003
4.5 kV High-Speed and Rugged Planar Diode.

MATSUSHITA KEN'ICHI, SHINOHE TAKASHI, TSUKUDA MASANORI, MINAMI YOSHIHIRO, MIWA JUN'ICHI, YANAGISAWA SATOSHI

電気学会電子デバイス研究会資料, Oct 8, 1998
Nano-fabrication of thin poly-Si film by AFM.

TANAMOTO TETSUSHI, TSUKIDA MASANORI, FUJITA SHINOBU

応用物理学会学術講演会講演予稿集, Sep, 1998
Improvement of planar junction termination reliability for 4500V devices.

TSUKUDA MASANORI, SHINOHE TAKASHI, MINAMI YOSHIHIRO, HASEGAWA SHIGERU, YANAGISAWA SATORU, TSUCHITANI MASANOBU, HORI SHIZUE

電気学会電子・情報・システム部門大会講演論文集, Aug, 1997

Professional Memberships

THE INSTITUTE OF ELECTRICAL ENGINEERS OF JAPAN

Research Projects

エネルギー社会に対応した高機能パワーデバイスの高信頼性を確保する超小型電流センサ及び製造ライン向け検査装置の開発

戦略的基盤技術高度化支援事業, 経済産業省, 2012 - Mar, 2015

Industrial Property Rights

特開2018-064115 高電圧絶縁ゲート型電力用半導体装置およびその製造方法

大村一郎, 田中雅浩, 附田正則, 三木大和
特許第6288678号高電圧絶縁ゲート型電力用半導体装置の設計方法および製造方法

大村一郎, 田中雅浩, 附田正則, 三木大和
特開2017-216363 半導体装置および半導体装置の製造方法

附田正則, 大村一郎, 馬場昭好
特許第6153151号高電圧電力用半導体装置

大村一郎, 瀬戸康太, 附田正則
WO2017-026483 半導体検査装置

大村一郎, 渡邉晃彦, 附田正則
WO2017-014297 ロゴスキ型電流センサ

大村一郎, 附田正則
特許第6004988号電力用半導体素子のゲート制御装置

大村一郎, 附田正則, 三木大和, 椋木誠, 高尾健志, 吉沢大輔
特開2016-151569 電力用半導体デバイスのボンディングワイヤ電流磁界分布検査診断方法及び装置

大村一郎, 附田正則, 田代勝治, 松尾和顕
特開2016-151568 電力用半導体デバイスのボンディングワイヤ電流磁界分布検出方法及び装置

大村一郎, 附田正則, 田代勝治, 篠原長勇喜, 中野繁太, 大胡田清一, 長友一則
特許第5846421号半導体回路の電流測定装置

大村一郎, 加生裕也, 平井秀敏, 附田正則
特許第5804494号半導体装置及びその駆動方法

大村一郎, 松本泰明, 津田基裕, 附田正則
特許第5721137号半導体装置の短絡保護装置

大村一郎, 湯淺一史, 谷村拓哉, 附田正則
特開2014-230410 電力用半導体素子のゲート制御装置

大村一郎, 附田正則, 三木大和, 椋木誠, 高尾健志, 吉沢大輔
特開2013-251338 高電圧電力用半導体装置

大村一郎, 瀬戸康太, 附田正則
WO2013-180186 高電圧絶縁ゲート型電力用半導体装置およびその製造方法

大村一郎, 田中雅浩, 附田正則, 三木大和
特開2013-076569 半導体回路の電流測定装置

大村一郎, 加生裕也, 平井秀敏, 附田正則
特開2012-243918 半導体装置及びその駆動方法

大村一郎, 松本泰明, 津田基裕, 附田正則
特開2012-244365 半導体装置の短絡保護装置

大村一郎, 湯淺一史, 谷村拓哉, 附田正則
特許第5150195号縦型半導体装置

附田正則, 大村一郎
特開2010-186893 半導体装置

附田正則