2019年8月1日
Growth process of hexagonal boron nitride in the diffusion and precipitation method studied by X-ray photoelectron spectroscopy
Japanese Journal of Applied Physics
- ,
- 巻
- 58
- 号
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.7567/1347-4065/ab203a
- 出版者・発行元
- IOP PUBLISHING LTD
Submonolayer h-BN was grown on Ni foil in ultra-high vacuum by the diffusion and precipitation method and the growth process was studied by X-ray photoelectron spectroscopy. Formation of h-BN started to be observed at 600 degrees C. All through the process, the surface was always slightly B-rich, which is consistent with the fact that B which is soluble in Ni at a high temperature can diffuse in Ni by the conventional bulk diffusion and insoluble N cannot. Moreover, both formation and decomposition of h-BN were found to occur at elevated temperatures possibly depending on provision of N atoms to the surface. On the Ni surface, decomposition of h-BN was observed at a relatively low temperature of 800 degrees C. (C) 2019 The Japan Society of Applied Physics
- リンク情報
- ID情報
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- DOI : 10.7567/1347-4065/ab203a
- ISSN : 0021-4922
- eISSN : 1347-4065
- ORCIDのPut Code : 58922788
- Web of Science ID : WOS:000478967400036