論文

査読有り
2019年8月1日

Growth process of hexagonal boron nitride in the diffusion and precipitation method studied by X-ray photoelectron spectroscopy

Japanese Journal of Applied Physics
  • Satoru Suzuki
  • ,
  • Yuichi Haruyama

58
記述言語
英語
掲載種別
研究論文(学術雑誌)
DOI
10.7567/1347-4065/ab203a
出版者・発行元
IOP PUBLISHING LTD

Submonolayer h-BN was grown on Ni foil in ultra-high vacuum by the diffusion and precipitation method and the growth process was studied by X-ray photoelectron spectroscopy. Formation of h-BN started to be observed at 600 degrees C. All through the process, the surface was always slightly B-rich, which is consistent with the fact that B which is soluble in Ni at a high temperature can diffuse in Ni by the conventional bulk diffusion and insoluble N cannot. Moreover, both formation and decomposition of h-BN were found to occur at elevated temperatures possibly depending on provision of N atoms to the surface. On the Ni surface, decomposition of h-BN was observed at a relatively low temperature of 800 degrees C. (C) 2019 The Japan Society of Applied Physics

リンク情報
DOI
https://doi.org/10.7567/1347-4065/ab203a
Web of Science
https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000478967400036&DestApp=WOS_CPL
ID情報
  • DOI : 10.7567/1347-4065/ab203a
  • ISSN : 0021-4922
  • eISSN : 1347-4065
  • ORCIDのPut Code : 58922788
  • Web of Science ID : WOS:000478967400036

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