Ikeda Shoji

Profile Information

Affiliation: Professor, Center for Innovative Integrated Electronic Systems Research and Development Division, Tohoku University

Degree: 博士（工学）(Muroran Institute of Technology)

J-GLOBAL ID: 200901090048389322
researchmap Member ID: 5000101921

External link: http://kaken.nii.ac.jp/d/r/90281865.ja.html

Research Interests

磁気トンネル接合

Research Areas

Manufacturing technology (mechanical, electrical/electronic, chemical engineering) / Electric/electronic material engineering /

Research History

2011 - 2012

Research Institute of Electrical Communication, Tohoku University

Awards

2016

DPS Best Paper Award, For the paper published as “Plasma process induced physical damages on multilayered magnetic films for magnetic domain wall motion”
2012

SSDM Paper Award 2012, Studies on Static Noise Margin and Scalability for Low-Power and High-Density Nonvolatile SRAM using Spin-Transfer-Torque (STT) MTJs, International Conference on Solid State Devices and Materials
2011

DPS Best Paper Award, For the paper published as “Damage recovery by reductive chemistry after methanol based Plasma etch to fabricate magnetic tunnel junction“
2009

31st JJAP Paper Award, Fabrication of a Nonvolatile Full Adder Based on Logic-in-Memory Architecture Using Magnetic Tunnel Junctions

Shoun Matsunaga, Jun Hayakawa, Shoji Ikeda, Katsuya Miura, Haruhiro Hasegawa, Tetsuo Endoh, Hideo Ohno, and Takahiro Hanyu
Sep, 2003

平成15年度日本応用磁気学会論文賞, 日本応用磁気学会

S. Ikeda, I. Tagawa, T. Kubomiya, J. Kane, Y. Uehara, T. Koshikawa
Apr, 1994

電気情報通信学会北海道支部奨励賞, 電気情報通信学会

Papers

279

Ultrafast spin–orbit torque-induced magnetization switching in a 75°-canted magnetic tunnel junction

T. V. A. Nguyen, H. Naganuma, H. Honjo, S. Ikeda, T. Endoh

AIP Advances, 14 025018-025018, Feb 1, 2024 Peer-reviewed
Field-free spin-orbit torque switching and large dampinglike spin-orbit torque efficiency in synthetic antiferromagnetic systems using interfacial Dzyaloshinskii-Moriya interaction

Yoshiaki Saito, Shoji Ikeda, Nobuki Tezuka, Hirofumi Inoue, Tetsuo Endoh

Physical Review B, 108(2), Jul 20, 2023
Enhancement of Damping-Like Spin-Orbit-Torque Efficiency in Synthetic Antiferromagnetic System using Pt-Cu Alloy

Yoshiaki Saito, Shoji Ikeda, Hirofumi Inoue, Tetsuo Endoh

2023 IEEE International Magnetic Conference - Short Papers (INTERMAG Short Papers), May, 2023
Charge-to-Spin Conversion Efficiency in Synthetic Antiferromagnetic System using Pt-Cu/Ir/Pt-Cu spacer layers

Yoshiaki Saito, Shoji Ikeda, Hirofumi Inoue, Tetsuo Endoh

IEEE Transactions on Magnetics, 1-1, 2023
Correlation between the magnitude of interlayer exchange coupling and charge-to-spin conversion efficiency in a synthetic antiferromagnetic system

Yoshiaki Saito, Shoji Ikeda, Tetsuo Endoh

Applied Physics Express, 16(1) 013002-013002, Jan 1, 2023
25 nm iPMA-type Hexa-MTJ with solder reflow capability and endurance>107 for eFlash-type MRAM

H. Honjo, K. Nishioka, S. Miura, H. Naganuma, T. Watanabe, T. Nasuno, T. Tanigawa, Y. Noguchi, H. Inoue, M. Yasuhira …

IEEE International electron devices meeting, 226-229, Dec, 2022 Peer-reviewed
Influence of Iridium Sputtering Conditions on the Magnetic Properties of Co/Pt-Based Iridium-Synthetic Antiferromagnetic Coupling Reference Layer

H. Honjo, H. Naganuma, K. Nishioka, T. V.A. Nguyen, M. Yasuhira, S. Ikeda, T. Endoh

IEEE Transactions on Magnetics, 58(8), Aug 1, 2022
Effect of oxygen incorporation on dynamic magnetic properties in Ta-O/Co-Fe-B bilayer films under out-of-plane and in-plane magnetic fields

T. V.A. Nguyen, Y. Saito, H. Naganuma, S. Ikeda, T. Endoh, Y. Endo

AIP Advances, 12(3), Mar 1, 2022
Perpendicular Magnetic Tunnel Junctions With Four Anti-Ferromagnetically Coupled Co/Pt Pinning Layers

H. Honjo, K. Nishioka, S. Miura, H. Naganuma, T. Watanabe, Y. Noguchi, T. V.A. Nguyen, M. Yasuhira, S. Ikeda, T. Endoh

IEEE Transactions on Magnetics, 58(2), Feb 1, 2022
Effect of Magnetic Coupling between Two CoFeB Layers on Thermal Stability in Perpendicular Magnetic Tunnel Junctions with MgO/CoFeB/Insertion Layer/CoFeB/MgO Free Layer

K. Nishioka, S. Miura, H. Honjo, H. Naganuma, T. V.A. Nguyen, T. Watanabe, S. Ikeda, T. Endoh

IEEE Transactions on Magnetics, 58(2), Feb 1, 2022
Enhancement of current to spin-current conversion and spin torque efficiencies in a synthetic antiferromagnetic layer based on a Pt/Ir/Pt spacer layer

Yoshiaki Saito, Shoji Ikeda, Tetsuo Endoh

Physical Review B, 105(5), Feb 1, 2022
Nanometer-thin L1<inf>0</inf>-MnAl film with B2-CoAl underlayer for high-speed and high-density STT-MRAM: Structure and magnetic properties

Yutaro Takeuchi, Ryotaro Okuda, Junta Igarashi, Butsurin Jinnai, Takaharu Saino, Shoji Ikeda, Shunsuke Fukami, Hideo Ohno

Applied Physics Letters, 120(5), Jan 31, 2022
Design and Heavy-Ion Testing of MTJ/CMOS Hybrid LSIs for Space-Grade Soft-Error Reliability

K. Watanabe, T. Shimada, K. Hirose, H. Shindo, D. Kobayashi, T. Tanigawa, S. Ikeda, T. Shinada, H. Koike, T. Endoh …

IEEE International Reliability Physics Symposium Proceedings, 2022-March P541-P545, 2022
Synthetic antiferromagnetic layer based on Pt/Ru/Pt spacer layer with 1.05 nm interlayer exchange oscillation period for spin-orbit torque devices

Yoshiaki Saito, Shoji Ikeda, Tetsuo Endoh

Applied Physics Letters, 119(14), Oct 4, 2021
Antiferromagnetic interlayer exchange coupling and large spin Hall effect in multilayer systems with Pt/Ir/Pt and Pt/Ir layers

Yoshiaki Saito, Nobuki Tezuka, Shoji Ikeda, Tetsuo Endoh

Physical Review B, 104(6), Aug 1, 2021
First Demonstration of 25-nm Quad Interface p-MTJ Device with Low Resistance-Area Product MgO and Ten Years Retention for High Reliable STT-MRAM

K. Nishioka, S. Miura, H. Honjo, H. Inoue, T. Watanabe, T. Nasuno, H. Naganuma, T. V.A. Nguyen, Y. Noguchi, M. Yasuhira …

IEEE Transactions on Electron Devices, 68(6) 2680-2685, Jun, 2021
Dual-Port SOT-MRAM Achieving 90-MHz Read and 60-MHz Write Operations under Field-Assistance-Free Condition

Masanori Natsui, Akira Tamakoshi, Hiroaki Honjo, Toshinari Watanabe, Takashi Nasuno, Chaoliang Zhang, Takaho Tanigawa, Hirofumi Inoue, Masaaki Niwa, Toru Yoshiduka …

IEEE Journal of Solid-State Circuits, 56(4) 1116-1128, Apr, 2021
40 nm 1T-1MTJ 128 Mb STT-MRAM with Novel Averaged Reference Voltage Generator Based on Detailed Analysis of Scaled-Down Memory Cell Array Design

Hiroki Koike, Takaho Tanigawa, Toshinari Watanabe, Takashi Nasuno, Yasuo Noguchi, Mitsuo Yasuhira, Toru Yoshiduka, Yitao Ma, Hiroaki Honjo, Koichi Nishioka …

IEEE Transactions on Magnetics, 57(3), Mar, 2021
Structural Analysis of CoFeB/MgO-Based Perpendicular MTJs with Junction Size of 20 nm by STEM Tomography

M. Niwa, K. Kimura, T. Naijo, A. Oshurahunov, S. Nagamachi, H. Inoue, H. Honjo, S. Ikeda, T. Endoh

IEEE Transactions on Magnetics, 57(2), Feb, 2021
Effect of surface modification treatment on top-pinned MTJ with perpendicular easy axis

H. Honjo, H. Naganuma, T. V.A. Nguyen, H. Inoue, M. Yasuhira, S. Ikeda, T. Endoh

AIP Advances, 11(2), Feb 1, 2021

Misc.

1T1MTJ STT-MRAM Cell Array Design with an Adaptive Reference Voltage Generator

小池洋紀, 三浦貞彦, 本庄弘明, 渡辺俊成, 佐藤英夫, 佐藤創志, 那須野孝, 野口靖夫, 安平光雄, 谷川高穂 …

電子情報通信学会技術研究報告 = IEICE technical report : 信学技報, 116(3) 51-56, Apr 14, 2016
Research and Development of Spintronics Material and Device Science and Technology for a Disaster-Resistant Safe and Secure Society : Non-volatile Working Memory Technology based on Spintronics for High Disaster-Resistant Society, and its System Application

203 49-52, Jul 24, 2015
A 1Mb STT-MRAM for Nonvolatile Embedded Memories performing 1.5ns/2.1ns Random Read/Write Cycle Time : Background Write (BGW) Scheme applied to a 6T2MTJ Memory Cell

OHSAWA Takashi, KOIKE Hiroki, MIURA Sadahiko, KINOSHITA Keizo, HONJO Hiroaki, IKEDA Shoji, HANYU Takahiro, OHNO Hideo, ENDOH Tetsuo

Technical report of IEICE. ICD, 114(13) 33-38, Apr 17, 2014
A Power-Gated MPU with 3-μsec Entry/Exit Delay using MTJ-Based Nonvolatile Flip-Flop

KOIKE Hiroki, SAKIMURA Noboru, NEBASHI Ryusuke, TSUJI Yukihide, MORIOKA Ayuka, MIURA Sadahiko, HONJO Hiroaki, SUGIBAYASHI Tadahiko, OHSAWA Takashi, IKEDA Shoji …

Technical report of IEICE. ICD, 114(13) 85-90, Apr 17, 2014
7 Spintronics-based Integrated Circuits and Contribution to Energy Saving Society(<Special Section>Information and Communication Technologies for the Creation of Delightful Future from Tohoku Area)

OHNO Hideo, ENDOH Tetsuo, HANYU Takahiro, ANDO Yasuo, KASAI Naoki, IKEDA Shoji

The Journal of the Institute of Electronics, Information, and Communication Engineers, 96(10) 771-775, Oct 1, 2013
1Mb 4T-2MTJ Nonvolatile STT-RAM for Embedded Memories Using 32b Fine-Gained Power Gating Technique : Achieves 1.0ns/200ps Wake-Up/Power-Off Times

ENDOH Tetsuo, OHSAWA Takashi, KOIKE Hiroki, MIURA Sadahiko, HONJO Hiroaki, TOKUTOME Keiichi, IKEDA Shoji, HANYU Takahiro, OHNO Hideo

Technical report of IEICE. ICD, 113(1) 27-32, Apr 4, 2013
Fabrication of a Nonvolatile TCAM Chip Based on 4T-2MTJ Cell Structure

MATSUNAGA Shoun, MIURA Sadahiko, HONJO Hiroaki, KINOSHITA Keizo, IKEDA Shoji, ENDOH Tetsuo, OHNO Hideo, HANYU Takahiro

Technical report of IEICE. ICD, 113(1) 33-38, Apr 4, 2013
磁気トンネル接合素子のプラズマプロセス誘起ダメージとリカバリーの試み

木下啓藏, 山本直志, 本庄弘明, 末光克巳, 石綿延行, 大嶋則和, 深見俊輔, 山本弘輝, 森田正, 笠井直記 …

応用物理学会学術講演会講演予稿集(CD-ROM), 72nd ROMBUNNO.31P-M-5, Aug 16, 2011
Fabrication of a Nonvolatile Lookup-Table Circuit Chip Using Magneto/Semiconductor-Hybrid Structure for an Immediate-Power-Up Field Programmable Gate Array

SUZUKI Daisuke, NATSUI Masanori, IKEDA Shoji, HASEGAWA Haruhiro, MIURA Katsuya, HAYAKAWA Jun, ENDOH Tetsuo, OHNO Hideo, HANYU Takahiro

Technical report of IEICE. ICD, 110(9) 47-52, Apr 15, 2010
A 32-Mb SPRAM with localized bi-directional write driver, '1'/'0' dual-array equalized reference scheme, and 2T1R memory cell layout

TAKEMURA Riichiro, KAWAHARA Takayuki, MIURA Katsuya, YAMAMOTO Hiroyuki, HAYAKAWA Jun, MATSUZAKI Nozomu, ONO Kazuo, YAMANOUCHI Michihiko, ITO Kenchi, TAKAHASHI Hiromasa …

Technical report of IEICE. ICD, 110(9) 53-57, Apr 15, 2010
Advanced magnetic tunnel junctions for hybrid spintronics/CMOS circuits

IKEDA Shoji, HAYAKAWA Jun, GAN Huadong, MIZUNUMA Kotaro, PARK Ji Ho, YAMAMOTO Hiroyuki, MIURA Katsuya, HASEGAWA Haruhiro, SASAKI Ryutaro, MEGURO Toshiyasu …

IEICE technical report, 109(98) 5-8, Jun 17, 2009
SPRAM with large thermal stability for high immunity to read disturbance and long retention for high-temperature operation

K. Ono, T. Kawahara, R. Takemura, K. Miura, M. Yamanouchi, J. Hayakawa, K. Ito, H. Takahashi, H. Matsuoka, S. Ikeda …

2009 SYMPOSIUM ON VLSI TECHNOLOGY, DIGEST OF TECHNICAL PAPERS, 73 228-+, 2009
Giant TMR in CoFeB/MgO/CoFeB Magnetic Tunnel Junctions

IKEDA Shoji, HAYAKAWA Jun, LEE Young Min, MIURA Katsuya, SASAKI Ryutaro, MATSUKURA Fumihiro, MEGURO Toshiyasu, OHNO Hideo

2007 746-747, Sep 19, 2007
SPRAM (SPin-transfer torque RAM) with a synthetic ferrimagnetic free layer for suppressing read disturbance and write-current dispersion

Miura Katsuya, Kawahara Takayuki, Takemura Riichiro, Hayakawa Jun, Yamanouchi Michihiko, Ikeda Shoji, Sasaki Ryutaro, Ito Kenchi, Takahashi Hiromasa, Matsuoka Hideyuki …

Technical report of IEICE. ICD, 107(195) 135-138, Aug 16, 2007
SPRAM (SPin-transfer torque RAM) with a synthetic ferrimagnetic free layer for suppressing read disturbance and write-current dispersion

Miura Katsuya, Kawahara Takayuki, Takemura Riichiro, Hayakawa Jun, Yamanouchi Michihiko, Ikeda Shoji, Sasaki Ryutaro, Ito Kenchi, Takahashi Hiromasa, Matsuoka Hideyuki …

Technical report of IEICE. SDM, 107(194) 135-138, Aug 16, 2007
2Mビットのスピン注入方式不揮発性RAMを試作

河原尊之, 高橋宏昌, 松岡秀行, 池田正二, 大野英男

日経エレクトロニクス, (959) 97-110, Aug, 2007
2-Mb SPRAM (SPin-transfer torque RAM) with Bit-by-bit Bi-Directional Current Write and Parallelizing-Direction Current Read

Takemura Riichiro, Kawahara Takayuki, Miura Katsuya, Hayakawa Jun, Ikeda Shoji, LEE Young Min, Sasaki Ryutaro, Goto Yasushi, Ito Kenchi, Meguro Toshiyasu …

Technical report of IEICE. ICD, 107(1) 29-34, Apr 5, 2007
Magnetoresistance effect and current-induced magnetization switching in sputter deposited MgO based magnetic tunnel junctions

HAYAKAWA J, IKEDA S, LEE Y. M, SASAKI R, MATSUKURA F, MEGURO T, TAKAHASHI H, OHNO H

153 21-29, Feb 27, 2007
High B_s Materials for Write Head

UEHARA Yuji, IKEDA Shoji, MATSUOKA Masaaki, MIYAKE Yuko, KATO Masaya, MIYAJIMA Toyoo, NOMA Kenji, KANAI Hitoshi

ITE technical report, 29(12) 17-22, Feb 10, 2005
High B_s Materials for Write Head

UEHARA Yuji, IKEDA Shoji, MATSUOKA Masaaki, MIYAKE Yuko, KATO Masaya, MIYAJIMA Toyoo, NOMA Kenji, KANAI Hitoshi

IEICE technical report. Magnetic recording, 104(652) 17-22, Feb 3, 2005

Books and Other Publications

半導体ストレージ2012

羽生貴弘, 池田正二, 杉林直彦, 笠井直記, 遠藤哲郎, 大野英男 (Role: Joint author, 第3章スピントロニクス素子を用いた待機時電力ゼロのLSI技術を提案)

日経BP社, Jul 29, 2011 (ISBN: 9784822265588)

Presentations

188

CoFeB and Ta capping layer thicknesses dependence of magnetic properties for MgO/CoFeB/Ta stacks

K. Watanabe

33rd Electronic Materials Symposium (EMS-33), Jul 9, 2014
Ferromagnetic resonance spectra of CoFeB-MgO magnetic tunnel junction measured by homodyne detection

E. Hirayama

33rd Electronic Materials Symposium (EMS-33), Jul 9, 2014
Magnetization reversal mode switching and its application

S. Kanai

33rd Electronic Materials Symposium (EMS-33), Jul 9, 2014
In-plane current-induced effective fields and magnetization switching in Ta/CoFeB/MgO structures

C. Zhang

12th RIEC International Workshop on Spintronics, Jun 25, 2014
Temperature dependence of thermal stability factor in CoFeB-MgO magnetic tunnel junction

Y. Takeuchi

12th RIEC International Workshop on Spintronics, Jun 25, 2014
Magnetization switching induced by electric field

S. Kanai

12th RIEC International Workshop on Spintronics, Jun 25, 2014
High thermal stability of magnetic tunnel junction with CoFeB/Ta/[Co/Pt] multilayer ferromagnetic electrode

S. Ishikawa

12th RIEC International Workshop on Spintronics, Jun 25, 2014
MgO cap thickness dependence of interfacial anisotropy of MgO/FeB/MgO structure

Y. Horikawa

12th RIEC International Workshop on Spintronics, Jun 25, 2014
In-plane anisotropy in CoFeB magnetic tunnel junction

E. Hirayama

12th RIEC International Workshop on Spintronics, Jun 25, 2014
Thermal stability and critical current for domain wall motion in nanowires with reduced dimensions

S. Fukami

IEEE International Magnetics Conference (INTERMAG), May 4, 2014
電界誘起磁化ダイナミクスの実時間観測

S. Kanai

第61回応用物理学会春季学術講演会, Mar 17, 2014
Temperature dependence of electric-field on magnetic properties of Ta/CoFeB/MgO structures investigated by ferromagnetic resonance

A. Okada

第61回応用物理学会春季学術講演会, Mar 17, 2014
Magnetization switching by two successive voltage pulses

S. Kanai

第61回応用物理学会春季学術講演会, Mar 17, 2014
電流誘起磁壁移動素子のしきい電流と熱安定性の素子サイズ依存性

S. Fukami

第61回応用物理学会春季学術講演会, Mar 17, 2014
Ferromagnetic resonance spectra of CoFeB-MgO magnetic tunnel junctions measured by homodyne detection

E. Hirayama

第61回応用物理学会春季学術講演会, Mar 17, 2014
MgO/FeB/MgO積層膜における磁気異方性の上部MgO層厚依存性

堀川喜久

第61回応用物理学会春季学術講演会, Mar 17, 2014
Current induced domain wall creep in Ta/CoFeB/MgO/Ta wire

S. Duttagupta

第61回応用物理学会春季学術講演会, Mar 17, 2014
Ta and CoFeB thickness dependence of sheet resistance in Ta/CoFeB/MgO heterostructures

C. Zhang

第61回応用物理学会春季学術講演会, Mar 17, 2014
CoFeB/Ta/[Co/Pd]強磁性電極を用いた磁気トンネル接合

S. Ishikawa

第61回応用物理学会春季学術講演会, Mar 17, 2014
Current-induced switching properties under perpendicular magnetid field magnetic tunnel junctions with perpendicular magnetic easy axis

ハンジャン

第61回応用物理学会春季学術講演会, Mar 17, 2014

Research Projects

反強磁性体材料を基軸とした超高密度不揮発メモリデバイスの開拓

科学研究費助成事業, 挑戦的研究(開拓), 日本学術振興会, Jul, 2021 - Mar, 2026

斉藤好昭, 手束展規, 池田正二
高効率スピン軌道トルク電圧制御デバイス創製を目指したナノ構造エンジニアリング

科学研究費助成事業, 基盤研究(A), 日本学術振興会, Apr, 2019 - Mar, 2023

斉藤好昭, 手束展規, 池田正二
脳型コンピューティング向けダーク・シリコンロジックLSIの基盤技術開発

科学研究費助成事業, 基盤研究(S), 日本学術振興会, May, 2016 - Mar, 2021

羽生貴弘, 夏井雅典, 米田友洋, 今井雅, 池田正二, 鬼沢直哉, 村口正和
Spin transport and catalytic reactions in the boundary regions

Grants-in-Aid for Scientific Research, Grant-in-Aid for Scientific Research on Innovative Areas (Research in a proposed research area), Japan Society for the Promotion of Science, Apr, 2011 - Mar, 2016

TORIKAI Eiko, ASAKURA Kiyotaka, SUGIYAMA Jun, SUGAWARA Yoko, SHIMOMURA Koichiro, YOSHINO Junji, NAGAMINE Kanetada, NIIMURA Nobuo, JIN Xiuguang, MAEKAWA Sadamichi, WATANABE Masahiro, KANAYA Toshiji, KANNO Ryoji, TSUNEYUKI Shinji, KASAI Hideaki, NAKANISHI Hiroshi, IKEDA Shoji, NOZAKI Hiroshi, HARADA Masashi, KOSAKA Yusuke, KAWAURA Hiroaki, KUSUNOKI Masami, Amba Datt Pant
Development of formation technology for nano spintronics device

Grants-in-Aid for Scientific Research, Grant-in-Aid for Scientific Research (C), Japan Society for the Promotion of Science, 2011 - 2013

IKEDA Shoji
金属スピントロニクスデバイスの開発

The Other Research Programs, May, 2002
スピン注入磁化反転素子の開発

The Other Research Programs, May, 2002
高出力トンネル磁気抵抗素子の開発

The Other Research Programs, May, 2002

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