Sawahata Junji

Profile Information

Affiliation: 准教授, 国際創造工学科, 茨城工業高等専門学校

Degree: 博士（工学）(筑波大学)

J-GLOBAL ID: 201301027188097495
researchmap Member ID: B000231986

Research Interests

Research Areas

Manufacturing technology (mechanical, electrical/electronic, chemical engineering) / Electric/electronic material engineering / 半導体工学

Research History

Apr, 2017 - Present

Ibaraki National College of Technology
Apr, 2015 - Mar, 2017

Department of Electronic and Computer Engineering, Ibaraki National College of Technology
Apr, 2013 - Mar, 2015

Department of Electronic and Computer Engineering, Ibaraki National College of Technology
Apr, 2011 - Mar, 2013

Department of Electrical and Electronic Engineering, Tsuyama National College of Technology
Apr, 2007 - Mar, 2011

Sony Corporation

Education

- Mar, 2007

Graduate School of Pure and Applied Sciences, University of Tsukuba

Papers

Formation of silicon layer through aluminothermic reduction of quartz substrates

Muhammad Monirul Islam, Junji Sawahata, Katsuhiro Akimoto, Takeaki Sakurai

Frontiers in Materials, 9 977869, Sep, 2022 Peer-reviewed
Effects of Ta, Nb, Ba, and Sb concentration on structural, electrical, and optical properties of SnO2 thin films prepared by metal organic decomposition using spin coating

Junji Sawahata, Muhammad Monirul Islam

Thin Solid Films, 752 139249-139249, Jun, 2022 Peer-reviewed
Structural and electrical properties of Sb-doped SnO2 thin films prepared by metal organic decomposition

Junji Sawahata, Tasuku Kawasaki

Thin Solid Films, 685 210-215, Sep, 2019 Peer-reviewed
Effects of annealing temperature and Eu concentration on the structural and photoluminescence properties of Eu-doped SnO2 thin films prepared by a metal organic decomposition method

Junji Sawahata

Thin Solid Films, 656 1-5, Jun, 2018 Peer-reviewed
Structural and optical properties of boron-doped amorphous carbon nitride thin films synthesized by microwave electron cyclotron resonance-plasma chemical vapor deposition

Junji Sawahata, Michihito Teramoto, Shigeyuki Nakamura, Kenta Kametomo, Masaki Satake, Shin-ichi Yamamoto, Kunio Itoh, Kenichi Takarabe

JAPANESE JOURNAL OF APPLIED PHYSICS, 53(7) 071002, Jul, 2014 Peer-reviewed
Luminescence and energy-transfer mechanisms in Eu3+ -doped GaN epitaxial films

Shinya Higuchi, Atsushi Ishizumi, Junji Sawahata, Katsuhiro Akimoto, Yoshihiko Kanemitsu

Physical Review B - Condensed Matter and Materials Physics, 81(3), Jan 21, 2010 Peer-reviewed
Luminescence and energy-transfer mechanisms in Eu3+-doped GaN epitaxial films

Shinya Higuchi, Atsushi Ishizumi, Junji Sawahata, Katsuhiro Akimoto, Yoshihiko Kanemitsu

PHYSICAL REVIEW B, 81(3) 035207, Jan, 2010 Peer-reviewed
Relationship between defects and optical properties in Er-doped GaN

Shaoqiang Chen, Akira Uedono, Jongwon Seo, Junji Sawahata, Katsuhiro Akimoto

JOURNAL OF CRYSTAL GROWTH, 311(10) 3097-3099, May, 2009 Peer-reviewed
Incorporation sites and luminescence characterizations of Er-doped GaN grown by molecular beam epitaxy

Shaoqiang Chen, Jongwon Seo, Junji Sawahata, Katsuhiro Akimoto

JOURNAL OF CRYSTAL GROWTH, 311(7) 2042-2045, Mar, 2009 Peer-reviewed
Structural characterization of Eu-doped GaN by transmission electron microscopy

Jongwon Seo, Shaoqiang Chen, Junji Sawahata, Masaharu Mitome, Katsuhiro Akimoto

JOURNAL OF CERAMIC PROCESSING RESEARCH, 9(1) 68-70, Feb, 2008 Peer-reviewed
Structural and optical properties of Er doped GaN with various Er concentrations

Shaoqiang Chen, Jongwon Seo, Junji Sawahata, Katsuhiro Akimoto

Physica Status Solidi (C) Current Topics in Solid State Physics, 5(9) 3057-3059, 2008 Peer-reviewed
Photoluminescence spectra of Eu-doped GaN

J. Sawahata, J. W. Seo, S. Chen, K. Akimoto

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 205(1) 71-74, Jan, 2008 Peer-reviewed
Site-dependent Eu3+ luminescence in GaN : Eu3+ epitaxial films studied by microscopic photoluminescence spectroscopy

A. Ishizumi, J. Sawahata, K. Akimoto, Y. Kanemitsu

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 146(1-3) 186-188, Jan, 2008 Peer-reviewed
Structural and optical properties of Er doped GaN with various Er concentrations

Shaoqiang Chen, Jongwon Seo, Junji Sawahata, Katsuhiro Akimoto

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 9, 5(9) 3057-3059, 2008 Peer-reviewed
Effects of V/III ratio on photoluminescence spectra of Eu-doped GaN grown by molecular beam epitaxy

Junji Sawahata, Jongwon Seo, Mikio Takiguchi, Daisuke Saito, Shinya Nemoto, Katsuhiro Akimoto

JOURNAL OF CRYSTAL GROWTH, 301 420-423, Apr, 2007 Peer-reviewed
Photoluminescence spectra of Eu-doped GaN with various Eu concentrations

Junji Sawahata, Jongwon Seo, Shaoqiang Chen, Mikio Takiguchi, Daisuke Saito, Shinya Nemoto, Katsuhiro Akimoto

APPLIED PHYSICS LETTERS, 89(19) 192104, Nov, 2006 Peer-reviewed
Origin of efficient luminescence from GaN : Eu3+epitaxial films revealed by microscopic photoluminescence imaging spectroscopy

Atsushi Ishizumi, Junji Sawahata, Katsuhiro Akimoto, Yoshihiko Kanemitsu

APPLIED PHYSICS LETTERS, 89(19) 191908, Nov, 2006 Peer-reviewed
TEM observation of Eu-doped GaN and fabrication of n-GaN/Eu : GaN/p-GaN structure

J Sawahata, H Bang, JW Seo, T Tsukamoto, K Akimoto

OPTICAL MATERIALS, 28(6-7) 759-762, May, 2006 Peer-reviewed
Effect of V/III ratio on the optical properties of Eu-doped GaN

J. Sawahata, J. W. Seo, M. Takiguchi, D. Saito, S. Nemoto, K. Akimoto

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 3, NO 6, 3(6) 1911-1914, 2006 Peer-reviewed
Optical processes of red emission from Eu doped GaN

J Sawahata, HJ Bang, J Seo, K Akimoto

SCIENCE AND TECHNOLOGY OF ADVANCED MATERIALS, 6(6) 644-648, Sep, 2005 Peer-reviewed

Presentations

スピンコートを用いた有機金属分解法によるGa2O3薄膜の作製と構造・光学特性

藤田柊樹, 松下愛海, 澤畠淳二

2024年第71回応用物理学会春季学術講演会, Mar 24, 2024
スピンコートを用いた有機金属分解法により作製したTa，Nb，Ba，Sb添加SnO2薄膜の構造・電気・光学特性

澤畠淳二

2022年第69回応用物理学会春季学術講演会, Mar 23, 2022
Study of Si thin films obtained through metallothermic reduction of quartz substrate

Muhammad Monirul Islam, Junji Sawahata, Katsuhiro Akimoto, Takeaki Sakurai

Tunisia-Japan Symposium Materials for Sustainable Development: Fundamentals & Applications (TJS 2020), Mar 13, 2022
有機金属分解法を用いて作製した不純物添加SnO2薄膜の構造・電気特性

木戸一輝、澤畠淳二

2020年第67回応用物理学会春季学術講演会, Mar 13, 2020
Formation of nanocrystalline silicon on insulator through aluminothermic reduction of silica-substrates

Muhammad Monirul Islam, Junji Sawahata, Katsuhiro Akimoto, Takeaki Sakurai

Sep 21, 2018
有機金属分解法を用いて作製したSb添加SnO2薄膜の構造・電気特性における膜厚依存性

川﨑祐久, 澤畠淳二

2018年第65回応用物理学会春季学術講演会, Mar 19, 2018
有機金属分解法を用いたSb添加SnO2薄膜の作製と評価

川﨑祐久, 澤畠淳二

2017年第64回応用物理学会春季学術講演会, Mar 16, 2017
CN薄膜へのアニーリング効果

野々村秋人, 佐竹聖樹, 中村重之, 財部健一, 福井一俊, 澤畠淳二, 伊藤國雄, 番貴彦, 山本伸一

2017年第64回応用物理学会春季学術講演会, Mar 16, 2017
MgO粉末を用いたアモルファス窒化炭素薄膜の特性評価

吉岡慎吾, 野々村秋人, 磯川裕哉, 佐竹聖樹, 中村重之, 財部健一, 福井一俊, 澤畠淳二, 伊藤國雄, 番貴彦, 山本伸一

2017年第64回応用物理学会春季学術講演会, Mar 16, 2017
レーザ照射処理をしたアモルファス窒化炭素の発光スペクトルの温度依存性

中村圭佑, 福井一俊, 山本晃司, 財部健一, 中村重之, 伊藤國雄, 山本伸一, 澤畠淳二, 佐竹聖樹

2016年第77回応用物理学会秋季学術講演会, Sep 15, 2016
アモルファス窒化炭素薄膜の作製Ⅱ

内島一哉, 佐竹聖樹, 澤畠淳二, 中村重之, 財部健一, 福井一俊, 池田和聡, 伊藤國雄, 山本伸一

2016年第63回応用物理学会春季学術講演会, Mar 21, 2016
RFスパッタリング法によって作製したBCN薄膜の光学特性

内島一哉, 佐竹聖樹, 澤畠淳二, 中村重之, 財部健一, 福井一俊, 池田和聡, 伊藤國雄, 山本伸一

2016年第63回応用物理学会春季学術講演会, Mar 21, 2016
スピンコート法を用いたEu添加SnO2薄膜の作製と評価

澤畠淳二, 秋元伊織

2016年第63回応用物理学会春季学術講演会, Mar 20, 2016
ナノアモルファス窒化炭素粒子の高圧高温処理による新規物質合成

安井望, 寒川匡哉, 平井正明, 山本薫, 財部健一, 岡田卓, 山崎大輔, 小島洋平, 大藤弘明, 國次真輔, 澤畠淳二

2015年第76回応用物理学会秋季学術講演会, Sep 15, 2015
レーザ照射処理をしたアモルファス窒化炭素の発光及び励起スペクトル

池田和聡, 福井一俊, 山本晃司, 財部健一, 中村重之, 伊藤國雄, 山本伸一, 内島一哉, 澤畠淳二, 佐竹聖樹

2015年第76回応用物理学会秋季学術講演会, Sep 14, 2015
窒化炭素薄膜の発光特性におけるレーザー照射時間依存性

佐竹聖樹, 寺元統人, 澤畠淳二, 伊藤國雄, 亀友健太, 財部健一, 福井一俊, 山本伸一

2013年第60回応用物理学会春季学術講演会, Mar 28, 2013
Photo-luminescence of Carbon Nitride Films for Application to White Light Emitting Device

M. Satake, J.Sawahata, K. Itoh, K. Takarabe, K. Fukui, S. Yamamoto

The 19th International Display Workshops, PHp-20L, Kyoto, Japan, Dec, 2012
アモルファス窒化炭素のバンド構造

伊藤大輝, 福井一俊, 山本晃司, 亀友健太, 財部健一, 澤畠淳二, 中村重之, 伊藤國雄, 山本伸一

2012年第73回応用物理学会秋季学術講演会, Sep 13, 2012
Cu(InGa)Se2 thin film solar cells prepared by selenisation with van doorn apparatus

S. Nakamura, T. Ishihara, S. Takakura, J. Sawahata, Y. Oka, K. Kawamoto, N. Tanaka, T. Yamaguchi, S. Kunitsugu

18th International Conference on Ternary and Multinary Compounds, P04-01, Salzburg, Austria, Aug, 2012
アモルファス窒化炭素薄膜のPLスペクトルの温度依存性解析

澤畠淳二, 寺元統人, 森由衣, 中村重之, 伊藤國雄, 亀友健太, 山本伸一, 財部健一

2012年第59回応用物理学会春季学術講演会, Mar 17, 2012

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