Papers

Feb, 2012

Synthesis, Characterization, and Transistor and Solar Cell Applications of a Naphthobisthiadiazole-Based Semiconducting Polymer

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY
  • Itaru Osaka
  • ,
  • Masafumi Shimawaki
  • ,
  • Hiroki Mori
  • ,
  • Iori Doi
  • ,
  • Eigo Miyazaki
  • ,
  • Tomoyuki Koganezawa
  • ,
  • Kazuo Takimiya

Volume
134
Number
7
First page
3498
Last page
3507
Language
English
Publishing type
Research paper (scientific journal)
DOI
10.1021/ja210687r
Publisher
AMER CHEMICAL SOC

We report the synthesis and characterization of a novel donor acceptor semiconducting polymer bearing naphtho-bisthiadiazole (NTz), a doubly benzothiadiazole (BTz)-fused ring, and its applications to organic field-effect transistors and bulk heterojunction solar cells. With NTz's highly pi-extended structure and strong electron affinity, the NTz-based polymer (PNTz4T) affords a smaller bandgap and a deeper HOMO level than the BTz-based polymer (PBTz4T). PNTz4T exhibits not only high field-effect mobilities of similar to 0.56 cm(2)/(V s) but also high photovoltaic properties with power conversion efficiencies of similar to 6.3%, both of which are significantly high compared to those for PBTz4T. This is most likely due to the more suitable electronic properties and, importantly, the more highly ordered structure of PNTz4T in the thin film than that of PBTz4T, which might originate in the different symmetry between the cores. NTz, with centrosymmetry, can lead to a more linear backbone in the present polymer system than BTz with wdsymmetry, which might be favorable for better molecular ordering. These results demonstrate great promise for using NTz as a bulding unit for high-performance semiconducting polymers for both transistors and solar cells.

Link information
DOI
https://doi.org/10.1021/ja210687r
Web of Science
https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000301084700025&DestApp=WOS_CPL
ID information
  • DOI : 10.1021/ja210687r
  • ISSN : 0002-7863
  • Web of Science ID : WOS:000301084700025

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