論文

2014年5月

A Surface Potential Based Organic Thin-Film Transistor Model for Circuit Simulation Verified With DNTT High Performance Test Devices

IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING
  • T. K. Maiti
  • ,
  • T. Hayashi
  • ,
  • L. Chen
  • ,
  • H. Mori
  • ,
  • M. J. Kang
  • ,
  • K. Takimiya
  • ,
  • M. Miura-Mattausch
  • ,
  • H. J. Mattausch

27
2
開始ページ
159
終了ページ
168
記述言語
英語
掲載種別
研究論文(学術雑誌)
DOI
10.1109/TSM.2014.2304736
出版者・発行元
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC

A compact surface potential based model for organic thin-film transistors (OTFTs), including both tail and deep trap states across the band gap, is reported. The model has been developed on the basis of a complete surface potential approach for undoped-body OTFTs. Accurate surface potentials are calculated by explicitly including the floating backside potential that varies with applied biases. A pseudo-2D resistor model is developed to capture the structural features of the OTFT. The resistor model considers, in particular, the effects originating from a bias dependent 2D current flow in the channel region and results in accurate reproduction of the electrical characteristics. The fitting capability of the developed OTFT model is verified against measured high-performance dinaphtho thieno thiophene (DNTT) based field-effect transistor data. Accurate reproduction of the current characteristics of the OTFT test structures is verified from a week to a strong inversion regime.

リンク情報
DOI
https://doi.org/10.1109/TSM.2014.2304736
Web of Science
https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000336053800004&DestApp=WOS_CPL
ID情報
  • DOI : 10.1109/TSM.2014.2304736
  • ISSN : 0894-6507
  • eISSN : 1558-2345
  • Web of Science ID : WOS:000336053800004

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