May, 2003
Effects of tungsten doping on the CDW states of eta-Mo4O11
PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES
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- Volume
- 18
- Number
- 1-3
- First page
- 196
- Last page
- 197
- Language
- English
- Publishing type
- Research paper (scientific journal)
- DOI
- 10.1016/S1386-9477(02)00963-3
- Publisher
- ELSEVIER SCIENCE BV
The eta-Mo4O11 system shows successive CDW transitions due to its two-dimensional Fermi surface instability. We find that the lower temperature CDW-II transition easily disappears by doping a small amount of W atoms (less than 0.2%/Mo), though the higher temperature CDW-I transition is weakly depressed. The W atoms possibly substitute both the intra- and the inter-layer Mo sites. The doping effectively reduce the carrier compensation, leading to the suppression of TCDW-I. Moreover, the interlayer coherence between the intralayer two-dimensional CDWs may be destroyed by the substitution between the layers since the modulation of CDW-II state has an interlayer component. The resistivity along the conducting plane follows "log T" dependence below 10 K, suggesting that the W atoms doped within the layer should induce the Anderson-type charge localization. (C) 2002 Elsevier Science B.V. All rights reserved.
- Link information
- ID information
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- DOI : 10.1016/S1386-9477(02)00963-3
- ISSN : 1386-9477
- Web of Science ID : WOS:000183534200090