Papers

Peer-reviewed
May, 2003

Effects of tungsten doping on the CDW states of eta-Mo4O11

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES
  • T Kambe
  • ,
  • S Tsuboi
  • ,
  • N Nagao
  • ,
  • Y Nogami
  • ,
  • K Oshima

Volume
18
Number
1-3
First page
196
Last page
197
Language
English
Publishing type
Research paper (scientific journal)
DOI
10.1016/S1386-9477(02)00963-3
Publisher
ELSEVIER SCIENCE BV

The eta-Mo4O11 system shows successive CDW transitions due to its two-dimensional Fermi surface instability. We find that the lower temperature CDW-II transition easily disappears by doping a small amount of W atoms (less than 0.2%/Mo), though the higher temperature CDW-I transition is weakly depressed. The W atoms possibly substitute both the intra- and the inter-layer Mo sites. The doping effectively reduce the carrier compensation, leading to the suppression of TCDW-I. Moreover, the interlayer coherence between the intralayer two-dimensional CDWs may be destroyed by the substitution between the layers since the modulation of CDW-II state has an interlayer component. The resistivity along the conducting plane follows "log T" dependence below 10 K, suggesting that the W atoms doped within the layer should induce the Anderson-type charge localization. (C) 2002 Elsevier Science B.V. All rights reserved.

Link information
DOI
https://doi.org/10.1016/S1386-9477(02)00963-3
Web of Science
https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000183534200090&DestApp=WOS_CPL
ID information
  • DOI : 10.1016/S1386-9477(02)00963-3
  • ISSN : 1386-9477
  • Web of Science ID : WOS:000183534200090

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