論文

査読有り
2015年7月23日

Simple technique for prediction of breakdown voltage of ultrathin gate insulator under ESD testing

2015 International Conference on IC Design and Technology, ICICDT 2015
  • Yuichiro Mitani
  • ,
  • Kazuya Matsuzawa

記述言語
掲載種別
研究論文(国際会議プロシーディングス)
DOI
10.1109/ICICDT.2015.7165892

© 2015 IEEE. In this study, simple ramped voltage TLP (RV-TLP) measurement was utilized to predict breakdown voltage (BVOX) and number of pulses to breakdown (NBD) under ESD testing. The proposed prediction method does not require lengthy DC-TDDB measurements but instead utilizes quick Ramped Voltage (RV) stress measurements to calculate a voltage to breakdown (BVOX) in the ESD timeframe. From voltage ramping rate dependence of QBD and breakdown current (JBD), the power law between QBD and JBD was obtained. By using this QBD-JBD correlation, we succeeded the predictions of BVOX and NBD analytically, and these values correspond to that for conventional constant-voltage TLP measurement. Furthermore, according to the evaluation of QP, anode-hole-injection (AHI) model is still adaptable for the breakdown under nanosecond pulse ESD testing.

リンク情報
DOI
https://doi.org/10.1109/ICICDT.2015.7165892
Scopus
https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=84962822367&origin=inward
Scopus Citedby
https://www.scopus.com/inward/citedby.uri?partnerID=HzOxMe3b&scp=84962822367&origin=inward
ID情報
  • DOI : 10.1109/ICICDT.2015.7165892
  • SCOPUS ID : 84962822367

エクスポート
BibTeX RIS