2008年5月
A polarization-modulation method for the near-field mapping of laterally grown InGaN samples
OPTICS EXPRESS
- ,
- ,
- ,
- 巻
- 16
- 号
- 10
- 開始ページ
- 6889
- 終了ページ
- 6895
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.1364/OE.16.006889
- 出版者・発行元
- OPTICAL SOC AMER
Epitaxial Laterally overgrown (ELOG) InGaN materials are investigated using a polarization modulated scanning near-field optical microscope. The authors found that luminescence has spatial inhomogeneities and it is partially polarized. Near-field photoluminescence shows polarization phase fluctuation up to 45 degrees over adjacent domains. These results point toward the existence of asymmetries in carrier confinement due to structural anisotropic strain within the framework of the ELOG structure. (C) 2008 Optical Society of America.
- リンク情報
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- DOI
- https://doi.org/10.1364/OE.16.006889
- PubMed
- https://www.ncbi.nlm.nih.gov/pubmed/18545392
- Web of Science
- https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000256469800014&DestApp=WOS_CPL
- URL
- http://www.scopus.com/inward/record.url?eid=2-s2.0-43849096414&partnerID=MN8TOARS
- ID情報
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- DOI : 10.1364/OE.16.006889
- ISSN : 1094-4087
- ORCIDのPut Code : 21286123
- PubMed ID : 18545392
- SCOPUS ID : 43849096414
- Web of Science ID : WOS:000256469800014