論文

2016年

Impact of band nonparabolicity on threshold voltage of nanoscale SOI MOSFET

Active and Passive Electronic Components
  • Yasuhisa Omura

2016
記述言語
英語
掲載種別
研究論文(学術雑誌)
DOI
10.1155/2016/6068171
出版者・発行元
Hindawi Limited

This paper reconsiders the mathematical formulation of the conventional nonparabolic band model and proposes a model of the effective mass of conduction band electrons including the nonparabolicity of the conduction band. It is demonstrated that this model produces realistic results for a sub-10-nm-thick Si layer surrounded by an SiO2 layer. The major part of the discussion is focused on the low-dimensional electron system confined with insulator barriers. To examine the feasibility of our consideration, themodel is applied to the threshold voltage of nanoscale SOI FinFETs and compared to prior experimental results. This paper also addresses a model of the effective mass of valence band holes assuming the nonparabolic condition.

リンク情報
DOI
https://doi.org/10.1155/2016/6068171
ID情報
  • DOI : 10.1155/2016/6068171
  • ISSN : 1563-5031
  • ISSN : 0882-7516
  • SCOPUS ID : 85009446656

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