MISC

2015年6月

In vitro apatite formation on nano-crystalline titania layer aligned parallel to Ti6Al4V alloy substrates with sub-millimeter gap

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN MEDICINE
  • Satoshi Hayakawa
  • ,
  • Yuko Matsumoto
  • ,
  • Keita Uetsuki
  • ,
  • Yuki Shirosaki
  • ,
  • Akiyoshi Osaka

26
6
記述言語
英語
掲載種別
DOI
10.1007/s10856-015-5522-3
出版者・発行元
SPRINGER

Pure titanium substrates were chemically oxidized with H2O2 and subsequent thermally oxidized at 400 degrees C in air to form anatase-type titania layer on their surface. The chemically and thermally oxidized titanium substrate (CHT) was aligned parallel to the counter specimen such as commercially pure titanium (cpTi), titanium alloy (Ti6Al4V) popularly used as implant materials or Al substrate with 0.3-mm gap. Then, they were soaked in Kokubo's simulated body fluid (SBF, pH 7.4, 36.5 degrees C) for 7 days. XRD and SEM analysis showed that the in vitro apatite-forming ability of the contact surface of the CHT specimen decreased in the order: cpTi > Ti6Al4V > Al. EDX and XPS surface analysis showed that aluminum species were present on the contact surface of the CHT specimen aligned parallel to the counter specimen such as Ti6Al4V and Al. This result indicated that Ti6Al4V or Al specimens released the aluminum species into the SBF under the spatial gap. The released aluminum species might be positively or negatively charged in the SBF and thus can interact with calcium or phosphate species as well as titania layer, causing the suppression of the primary heterogeneous nucleation and growth of apatite on the contact surface of the CHT specimen under the spatial gap. The diffusion and adsorption of aluminum species derived from the half-sized counter specimen under the spatial gap resulted in two dimensionally area-selective deposition of apatite particles on the contact surfaces of the CHT specimen.

リンク情報
DOI
https://doi.org/10.1007/s10856-015-5522-3
Web of Science
https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000357532300001&DestApp=WOS_CPL
ID情報
  • DOI : 10.1007/s10856-015-5522-3
  • ISSN : 0957-4530
  • eISSN : 1573-4838
  • Web of Science ID : WOS:000357532300001

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