J-GLOBAL         Last updated: Aug 9, 2019 at 02:47
Waseda University
Faculty of Science and Engineering School of Advanced Science and Engineering
Job title
Dr.Eng(University of Tokyo)
Research funding number

Research Areas



Electric engineering, Faculty of Engineering, University of Tokyo
Electric engineering, Graduate School, Division of Engineering, University of Tokyo

Published Papers

Kobayashi, Yasuyuki; Kumakura, Kazuhide; Akasaka, Tetsuya; Yamamoto, Hideki; Makimoto, Toshiki
2014 Silicon Nanoelectronics Workshop, SNW 2014      Dec 2015
© 2014 IEEE.We demonstrate that hexagonal boron nitride (h-BN) can work as a release layer that enables the mechanical transfer of gallium nitride (GaN)-based device structures onto foreign substrates. We illustrate the potential versatility of th...
Makimoto, T.; Kumakura, K.; Maeda, M.; Yamamoto, H.; Horikoshi, Y.; Horikoshi, Y.
Journal of Crystal Growth   425 138-140   Jul 2015
© 2015 Elsevier B.V. A 20 nm-thick AlON buffer layer consisting of Al<inf>2</inf>O<inf>3</inf>, graded AlON, AlN, and thin Al<inf>2</inf>O<inf>3</inf> amorphous films was used to grow AlN on a sapphire substrate by molecular beam epitaxy with radi...
Thiru, Sathiabama; Thiru, Sathiabama; Asakawa, Masaki; Honda, Kazuki; Kawaharazuka, Atsushi; Tackeuchi, Atsushi; Makimoto, Toshiki; Makimoto, Toshiki; Horikoshi, Yoshiji; Horikoshi, Yoshiji
Journal of Crystal Growth   425 203-206   Jul 2015
© 2015 Elsevier B.V.All rights reserved. High quality CuGaSe<inf>2</inf> and CuInSe<inf>2</inf> single crystalline layers are grown on GaAs (001) by employing the deposition sequence of migration enhanced epitaxy using a solid source molecular bea...
Kuramoto, Makoto; Kuramoto, Makoto; Urabe, Hiroyuki; Urabe, Hiroyuki; Nakano, Tomohiro; Nakano, Tomohiro; Kawaharazuka, Atsushi; Kawaharazuka, Atsushi; Nishinaga, Jiro; Nishinaga, Jiro; Makimoto, Toshiki; Horikoshi, Yoshiji; Horikoshi, Yoshiji
Journal of Crystal Growth   425 333-336   Jul 2015
© 2015 Elsevier B.V. The effect of excitons in Al<inf>x</inf>Ga<inf>1-x</inf>As/GaAs superlattice solar cells has been investigated. We have shown that the superlattice active layers are effective to improve the solar cell performances because of ...
Thiru, Sathiabama;Asakawa, Masaki;Honda, Kazuki;Kawaharazuka, Atsushi;Tackeuchi, Atsushi;Makimoto, Toshiki;Horikoshi, Yoshiji
AIP ADVANCES   5(2)    2015

Research Grants & Projects

Growth of BN on graphene by RF-MBE
Project Year: Apr 2014 - Mar 2017
We focused on the wide-bandgap nitride semiconductors as an insulating thin layer for epitaxial graphene on SiC to fabricate graphene electronic devices. First, a thin AlN layer was grown on the graphene by RF-MBE. It was found that the AlN surfac...
Research on hexagonal boron nitride semiconductors
We demonstrate that (0001) hexagonal boron nitrides (h-BN) are epitaxially grown on (111) Ni and (0001) sapphire substrates by metalorganic vapor phase epitaxy. A near-band-gap ultraviolet emission peak centered at energy of 5.47eV (227nm) is clea...


2016- 82079 : 窒化物半導体結晶成長方法
牧本 俊樹, 前田 理也, 堀越 佳治
2015-168594 : 窒化物半導体の成長方法
牧本 俊樹, 堀越 佳治, 前田 理也, 小林 祐輝