川島 知之

Effect of vanadium doping on amorphization of ZnO thin films on c-plane sapphire substrate 

THIN SOLID FILMS 605 73-76 2016年4月  査読有り

Comparison study of V-doped ZnO thin films on polycarbonate and quartz substrates deposited by RF magnetron sputtering 

THIN SOLID FILMS 605 53-56 2016年4月  査読有り

Comparison study of V-doped ZnO thin films on polycarbonate and quartz substrates deposited by RF magnetron sputtering 

THIN SOLID FILMS 605 53-56 2016年4月  査読有り

Optimization of Si–C reaction temperature and Ge thickness in C-mediated Ge dot formation 

Thin Solid Films 602 29-31 2016年3月  査読有り

Formation of Ge dot or film in Ge/Si heterostructure by using sub-monolayer carbon deposition on top and in-situ post annealing 

THIN SOLID FILMS 602 32-35 2016年3月  査読有り

Ge dots formation using Si(100)-c(4×4) surface reconstruction 

Journal of Crystal Growth 438 1-4 2016年3月  査読有り

Formation of Ge dots on Si(100) using reaction of Ge with sub-monolayer carbon on top 

JOURNAL OF CRYSTAL GROWTH 426 61-65 2015年9月  査読有り

Low-Temperature Heteroepitaxial Growth of Single-Domain V-Doped ZnO Films on c-Face Sapphire 

JOURNAL OF ELECTRONIC MATERIALS 44(5) 1351-1356 2015年5月  査読有り

Self-assemble formation of Ge dots on Si(100) via C/Ge/C/Si structure 

ECS Transactions 69(10) 69-73 2015年  査読有り

Formation of Ge quantum dots on Si substrate using consecutive deposition of Ge/C and in situ post annealing 

MICROELECTRONIC ENGINEERING 125 28-32 2014年8月  査読有り

Transition of carbon binding states on Si(100) depending on substrate temperature and its effect on Ge growth 

MICROELECTRONIC ENGINEERING 125 14-17 2014年8月  査読有り

Nitrogen doping effect upon hole tunneling characteristics of Si barriers in Si1-xGex/Si resonant tunneling diode 

THIN SOLID FILMS 557 302-306 2014年4月  査読有り

Mediation effect of sub-monolayer carbon on interfacial mixing in Ge growth on Si(100) 

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 11, NO 11-12 11(11-12) 1556-1560 2014年  査読有り

Electrical transport properties of isolated carbon nanotube/Si heterojunction Schottky diodes 

APPLIED PHYSICS LETTERS 103(19) 193111 2013年11月  査読有り

Behavior of N atoms after thermal nitridation of Si1-xGex surface 

THIN SOLID FILMS 520(8) 3392-3396 2012年2月  査読有り

Heavy atomic-layer doping of nitrogen in Si1-xGex film epitaxially grown on Si(100) by ultraclean low-pressure CVD 

THIN SOLID FILMS 518(6 SUPPL. 1) S62-S64 2010年1月  査読有り