茂庭昌弘 (Masahiro Moniwa) - マイポータル

基本情報

学位: 博士（工学）(北海道大学)

J-GLOBAL ID: 201301045174049070
researchmap会員ID: 7000005554

外部リンク: http://db.tohoku.ac.jp/whois/detail/198bfcf9c8229640dfddbd81f0237eba.html

研究キーワード

研究分野

ものづくり技術（機械・電気電子・化学工学） / 電子デバイス、電子機器 /

経歴

東北大学国際集積エレクトロニクス研究開発センター戦略企画部門, 教授,（研究開発部門兼務）

委員歴

2013年

電子情報通信学会, 英文論文誌C, 編集幹事
2013年

The Institute of Electronics, Information and Communication Engineers, Editor, Transactions on Electronics
2009年

応用物理学会, 代議員
2009年

Japan Society of Applied Physics, 代議員

MISC

The Observation of “Conduction Spot” on NiO Resistance Random Access Memory

Hirofumi Kondo, Masashi Arita, Takashi Fujii, Hiromichi Kaji, Masahiro Moniwa, Takeshi Yamaguchi, Ichiro Fujiwara, Masaki Yoshimaru, Yasuo Takahashi

Jpn. J. Appl. Phys. 50(8) 081101 2011年8月
The Observation of "Conduction Spot'' on NiO Resistance Random Access Memory

Hirofumi Kondo, Masashi Arita, Takashi Fujii, Hiromichi Kaji, Masahiro Moniwa, Takeshi Yamaguchi, Ichiro Fujiwara, Masaki Yoshimaru, Yasuo Takahashi

JAPANESE JOURNAL OF APPLIED PHYSICS 50(8) 081101 2011年8月
Floating Gate Memory With Biomineralized Nanodots Embedded in HfO2

Kosuke Ohara, Yosuke Tojo, Ichiro Yamashita, Toshitake Yaegashi, Masahiro Moniwa, Masaki Yoshimaru, Yukiharu Uraoka

IEEE TRANSACTIONS ON NANOTECHNOLOGY 10(3) 576-581 2011年5月
I-V measurement of NiO nanoregion during observation by transmission electron microscopy

Takashi Fujii, Masashi Arita, Kouichi Hamada, Hirofumi Kondo, Hiromichi Kaji, Yasuo Takahashi, Masahiro Moniwa, Ichiro Fujiwara, Takeshi Yamaguchi, Masaki Aoki …

JOURNAL OF APPLIED PHYSICS 109(5) 053702 2011年3月
The Observation of “Conduction Spot” on NiO Resistance RAM

T. Fujii, H. Kondo, H. Kaji, M. Arita, M. Moniwa, T. Yamaguchi, I. Fujiwara, M. Yoshimaru, Y. Takahashi

2010 International Conference on Solid State Devices and Materials (SSDM), Extended Abstracts 317-318 2010年
The Observation of “Conduction Spot” on NiO Resistance RAM

T. Fujii, H. Kondo, H. Kaji, M. Arita, M. Moniwa, T. Yamaguchi, I. Fujiwara, M. Yoshimaru, Y. Takahashi

2010 International Conference on Solid State Devices and Materials (SSDM), Extended Abstracts 317-318 2010年
Floating Gate Memory with Biomineralized Nanodots Embedded in High-k Gate Dielectric

Kosuke Ohara, Ichiro Yamashita, Toshitake Yaegashi, Masahiro Moniwa, Masaki Yoshimaru, Yukiharu Uraoka

APPLIED PHYSICS EXPRESS 2(9) 095001 2009年9月
Floating Gate Memory Based on Ferritin Nanodots with High-k Gate Dielectrics

Kosuke Ohara, Yukiharu Uraoka, Takashi Fuyuki, Ichiro Yamashita, Toshitake Yaegashi, Masahiro Moniwa, Masaki Yoshimaru

JAPANESE JOURNAL OF APPLIED PHYSICS 48(4) 04C153 2009年4月
Floating Gate Memory Devices Based on Ferritin Nanodots on High-k Gate Dielectrics

K. Ohara, Y. Uraoka, T. Fuyuki, I. Yamashita, T. Yaegashi, M. Moniwa, M. Yoshimaru

2009 International Meeting for Future of Electron Devices, Kansai (IMFEDK) 110-111 2009年
Floating Gate Memory Based on Ferritin Nanodots with High-k Gate Dielectrics

K. Ohara, Y. Uraoka, T. Fuyuki, T. Yaegashi, M. Moniwa, M. Yoshimaru

2009 Silicon Nanoelectronics Workshop (SNW) 5-17 2009年
Floating Gate Memory Devices Based on Ferritin Nanodots on High-k Gate Dielectrics

K. Ohara, Y. Uraoka, T. Fuyuki, I. Yamashita, T. Yaegashi, M. Moniwa, M. Yoshimaru

2009 International Meeting for Future of Electron Devices, Kansai (IMFEDK) 110-111 2009年
Floating Gate Memory Based on Ferritin Nanodots with High-k Gate Dielectrics

K. Ohara, Y. Uraoka, T. Fuyuki, T. Yaegashi, M. Moniwa, M. Yoshimaru

2009 Silicon Nanoelectronics Workshop (SNW) 5-17 2009年
Statistical p-n junction leakage model via trap level fluctuation for refresh-time-oriented dynamic random access memory design

Shiro Kamohara, Katsuhiko Kubota, Masahiro Moniwa, Tsugunori Okumura

JAPANESE JOURNAL OF APPLIED PHYSICS 47(7) 5304-5308 2008年7月
A compact model of phase-change memory based on rate equations of crystallization and amorphization

Ken'ichiro Sonoda, Atsushi Sakai, Masahiro Moniwa, Kiyoshi Ishikawa, Osamu Tsuchiya, Yasuo Inoue

IEEE TRANSACTIONS ON ELECTRON DEVICES 55(7) 1672-1681 2008年7月
Energy Band States of an Oxygen-doped GeSbTe Phase-change Memory Cell; Mechanism of Low-voltage Operation

Y. Fujisaki, N. Matsuzaki, K. Kurotsuchi, T. Morikawa, M. Kinoshita, N. Kitai, S. Hanzawa, H. Moriya, N. Takaura, M. Terao …

2007 Spring Meetings of the Materials Research Society (MRS), Symposium I, 2007 Spring Proceedings 997 0997-I11-01 2007年
Three-Dimensional Electro-Thermal Compact Model for Reset Operation of Phase Change Memories

A. Sakai, K. Sonoda, M. Moniwa, K. Ishikawa, O. Tsuchiya, Y. Inoue

2007 International Conference on Solid State Devices and Materials (SSDM), Extended Abstracts 828-829 2007年
Doped In-Ge-Te Phase Change Memory Featuring Stable Operation and Good Data Retention

T. Morikawa, K. Kurotsuchi, M. Kinoshita, N. Matsuzaki, Y. Matsui, Y. Fujisaki, S. Hanzawa, A. Kotabe, M. Terao, H. Moriya …

2007 IEEE International Electron Devices Meeting (IEDM), Technical Digest, 307-310 2007年
A 512kB embedded phase change memory with 416kB/s write throughput at 100μA cell write current

Satoru Hanzawa, Naoki Kitai, Kenichi Osada, Akira Kotabe, Yuichi Matsui, Nozomu Matsuzaki, Norikatsu Takaura, Masahiro Moniwa, Takayuki Kawahara

Digest of Technical Papers - IEEE International Solid-State Circuits Conference 471-616 2007年
Energy Band States of an Oxygen-doped GeSbTe Phase-change Memory Cell; Mechanism of Low-voltage Operation

Y. Fujisaki, N. Matsuzaki, K. Kurotsuchi, T. Morikawa, M. Kinoshita, N. Kitai, S. Hanzawa, H. Moriya, N. Takaura, M. Terao …

2007 Spring Meetings of the Materials Research Society (MRS), Symposium I, 2007 Spring Proceedings 997 0997-I11-01 2007年
Three-Dimensional Electro-Thermal Compact Model for Reset Operation of Phase Change Memories

A. Sakai, K. Sonoda, M. Moniwa, K. Ishikawa, O. Tsuchiya, Y. Inoue

2007 International Conference on Solid State Devices and Materials (SSDM), Extended Abstracts 828-829 2007年

もっとみる

書籍等出版物

2010年版「映像情報メディア工学大辞典」

2010年
2010年版「映像情報メディア工学大辞典」

2010年

茂庭昌弘

基本情報

研究キーワード

研究分野

経歴

委員歴

MISC

書籍等出版物

所属学協会

メニュー