2008年
An 11Gb/s inductive-coupling link with burst transmission
Digest of Technical Papers - IEEE International Solid-State Circuits Conference
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- 巻
- 51
- 号
- 開始ページ
- 285
- 終了ページ
- 614
- 記述言語
- 英語
- 掲載種別
- 研究論文（国際会議プロシーディングス）
- DOI
- 10.1109/ISSCC.2008.4523175
An 11 Gb/s inductive-coupling link in 0.18μm CMOS demonstrates an energy efficiency of 1.4pJ/b and delivers a data rate 11× higher than previous inductive-coupling links. Communication distance is5× longer than a capacitive-coupling link for the same data rate, layout area, and BER. Burst transmission at 6.4Gb/s reduces layout area by a factor of three. ©2008 IEEE.
- ID情報
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- DOI : 10.1109/ISSCC.2008.4523175
- ISSN : 0193-6530
- SCOPUS ID : 49549087966