GELLOZ Bernard Jacques

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Name
GELLOZ Bernard Jacques
Alternative names
Bernard Gelloz
Nickname
Bernard
Affiliation
Nagoya University
Section
Dept. of Physics, Graduate School of Science
Job title
Designated Associate Professor
Degree
Ph.D.(Fourier University)

Research Areas

 
 
  • Applied physics / Applied materials / optoelectronics/photonics of silicon nanostructures

Academic & Professional Experience

 
Oct 2019
 - 
Today
Designated Associate Professor, J-Lab, Dept. of Physics, Graduate School of Science, Nagoya University
 
Sep 2011
 - 
Sep 2019
Designated Associate Professor, Dept. of Applied Physics, Graduate School of Engineering, Nagoya University
 
Apr 2001
 - 
Aug 2011
Assistant Professor, Faculty of Technology, Dept. Elec.&Elec. Eng., Tokyo University Agriculture and Technology
 
Apr 2007
 - 
Aug 2011
R&D Division Manager, R&D, Quantum14 Corp.
 
Jan 2000
 - 
Mar 2001
Postodctoral Researcher, Semiconductor Laboratory, The Institute of Physical and Chemical Research (RIKEN)
 

Education

 
Sep 1994
 - 
Sep 1997
Ph.D. Physics (Condensed matter), Fourier University
 

Published Papers

 
Marwa Ennouri, Ifa Jlassi, Habib Elhouichet, Bernard Gelloz
Journal of Luminescence   216    Dec 2019
© 2019 Elsevier B.V. Er3+ doped phospho-tellurite glass was prepared by melt-quenching method. A limited partial crystallization of the glass samples was controlled by thermal annealing process in order to obtain a transparent glass-ceramic. The X...
Gelloz Bernard, Iriyama Takuma, Takura Naoto, Kondoh Eiichi, Jin Lianhua
ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY   8(9) R109-R113   Aug 2019   [Refereed]
Gelloz Bernard, Juangsa Firman Bagja, Nozaki Tomohiro, Asaka Koji, Koshida Nobuyoshi, Jin Lianhua
FRONTIERS IN PHYSICS   7    Apr 2019   [Refereed]
Lianhua Jin, Nobuto Miyatsu, Eiichi Kondoh, Bernard Gelloz, Naobumi Kanazawa, Toru Yoshizawa
Optical Review   25 656-662   Dec 2018
© 2018, The Optical Society of Japan. The diameter of cylindrical openings is conventionally measured with the mechanical and contact method. In this paper, we propose a contactless optical approach to measure dimensions of inner profile by a disk...
Walid Ben Haj Othmen, Brigitte Sieber, Habib Elhouichet, Ahmed Addad, Bernard Gelloz, Myriam Moreau, Sabine Szunerits, Rabah Boukherroub
Materials Science in Semiconductor Processing   77 31-39   Apr 2018
© 2017 Elsevier Ltd Fe-doped tin dioxide nanoparticles SnO2:Fe (x%) with x ranging from 0 to 20 were elaborated by a performed hydrothermal method. A deep structural study on the obtained nanoparticles was carried out using X-ray diffraction (XRD)...
Lianhua Jin, Takumi Tanaka, Eiichi Kondoh, Bernard Gelloz, Makoto Uehara
Japanese Journal of Applied Physics   56    Nov 2017
© 2017 The Japan Society of Applied Physics. Ellipsometry is a standard metrology tool for measuring thin films and characterizing surfaces. As an extension of single-point ellipsometry, imaging ellipsometry is implemented by replacing a detector ...
Lianhua Jin, Takuma Taguchi, Eiichi Kondoh, Bernard Gelloz
Applied Surface Science   421 565-570   Nov 2017
© 2016 Elsevier B.V. For macroscopically rough surface with roughness much greater than wavelength of probe light, scatter from the surface can be explained to some extent as the specular reflection by the local facet. When surfaces possess gratin...
B. Gelloz, K. Ichimura, H. Fuwa, E. Kondoh, L. Jin
ECS Journal of Solid State Science and Technology   6    Jan 2017
© 2016 The Electrochemical Society. All rights reserved. The progress of the chemical dissolution of porous silicon (PSi) formed from lightly-doped p-type silicon in ethanoic HF solutions was monitored by recording in situ the photocurrent from mo...
Jin L, Tanaka T, Kondoh E, Gelloz B, Sano K, Fujio I, Kajiyama Y, Uehara M
The Review of scientific instruments   88(1) 013704   Jan 2017   [Refereed]
Aroua Langar,Chaker Bouzidi,Array,Bernard Gelloz,Mokhtar Ferid
Displays   48 61-67   2017   [Refereed]
I. Soltani, S. Hraiech, K. Horchani-Naifer, H. Elhouichet, B. Gelloz, M. Férid
Journal of Alloys and Compounds   686 556-563   Nov 2016
© 2016 Elsevier B.V. All rights reserved. The melt quenching technique was used to prepare Er3+ ion doped phosphate glasses containing silver nanoparticles (Ag NPs). The amorphous nature of the glass is confirmed by X-ray diffraction patterns. Hom...
Walid Ben Haj Othmen, Brigitte Sieber, Catherine Cordier, Habib Elhouichet, Ahmed Addad, Bernard Gelloz, Myriam Moreau, Alexandre Barras, Mokhtar Férid, Rabah Boukherroub
Materials Research Bulletin   83 481-490   Nov 2016
© 2016 Elsevier Ltd Highly iron-doped tin dioxide nanoparticles (Sn1−xFexO2 NPs), with x varying from 0 to 0.2, were prepared by simple hydrothermal method. X-ray diffraction (XRD) patterns indicate that Sn1−xFexO2 NPs crystallize in the tetragona...
Jin L, Kobayashi D, Kondoh E, Kowa H, Gelloz B
Optics express   24(9) 9757-9765   May 2016   [Refereed]
Amer Al-Nafiey, Brigitte Sieber, Bernard Gelloz, Ahmed Addad, Myriam Moreau, Julien Barjon, Maria Girleanu, Ovidiu Ersen, Rabah Boukherroub
Journal of Physical Chemistry C   120 4571-4580   Mar 2016
© 2016 American Chemical Society. Zinc oxide nanorods (ZnO NRs), synthesized by a low temperature chemical method, were postannealed at 260°C in air and under high pressure water vapor (HWA) at 1.3-3.9 MPa. We found that the UV luminescence intens...
Hssen Fares, Wissal Stambouli, Habib Elhouichet, Bernard Gelloz, Mokhtar Férid
RSC Advances   6 31136-31145   Jan 2016
© The Royal Society of Chemistry 2016. Tellurite glasses co-activated with erbium ions and silver nanoparticles (Ag NPs) are prepared using melt quenching technique. The effect of heat treatment on structural, luminescence and spectroscopic proper...
Bernard Gelloz, Hiroki Fuw, Lianhua Jin
ECS Journal of Solid State Science and Technology   5    Jan 2016
© 2016 The Electrochemical Society. Most techniques used tomeasure the optical constants of porous silicon (PSi) are based on dried samples, which may be contaminated by the environment, and require sensible setups as well as meticulous sample pre...
Chayma Abed, Chaker Bouzidi, Habib Elhouichet, Bernard Gelloz, Mokhtar Ferid
Applied Surface Science   349 855-863   Sep 2015
© 2015 Elsevier B.V. All rights reserved. Undoped and Mg doped ZnO nanocrystals (NCs) ZnO:x%Mg (x = 1, 2, 3, and 5) were synthesized using sol-gel method. The structural and optical properties were investigated by X-ray diffraction (XRD), Raman s...
Lianhua Jin, Koji Yamaguchi, Mitsuhiro Watanabe, Shinichiro Hira, Eiichi Kondoh, Bernard Gelloz
Optical Review   22 511-520   Aug 2015
© 2015, The Optical Society of Japan. The polarization status of in- and out-of-plane scattered light from macroscopically rough surfaces was measured and expressed in a scattering coordinate system. In this coordinate system, the direction of the...
Hssen Fares, Habib Elhouichet, Bernard Gelloz, Mokhtar Férid
Journal of Applied Physics   117    May 2015
© 2015 AIP Publishing LLC. The melt quenching method is used to prepare tellurite glasses co-activated with erbium ions and silver nanoparticles (Ag NPs). The glass samples are characterized by x-ray diffraction, UV-vis-NIR absorption, transmissio...
Jin L, Kasuga S, Kondoh E, Gelloz B
Applied optics   54(10) 2991-2998   Apr 2015   [Refereed]
Lianhua Jin, Toshifumi Oya, Shigeaki Tamekuni, Mitsuhiro Watanabe, Eiichi Kondoh, Bernard Gelloz
Thin Solid Films   567 82-86   Sep 2014
Microporous silicon has been formed by anodization of p-type silicon. The pores with diameter less than 2 nm were filled with copper by using supercritical carbon dioxide fluid. The copper-filled layers were investigated with the field emission sc...
Hssen Fares, Habib Elhouichet, Bernard Gelloz, Mokhtar Férid
Journal of Applied Physics   116    Sep 2014
© 2014 AIP Publishing LLC. Tellurite glasses doped Er3+ ions and containing Silver nanoparticles (Ag NPs) are prepared using melt quenching technique. The nucleation and growth of Ag NPs were controlled by a thermal annealing process. The X-ray di...
N. Koshida, A. Kojima, T. Ohta, R. Mentek, B. Gelloz, N. Mori, J. Shirakashia
ECS Solid State Letters   3    Mar 2014
An alternative wet deposition process of thin group-IV films is demonstrated under the hot electron injection into solutions. A nanocrystalline silicon (nc-Si) device, composed of a thin Au/Ti film, an anodized nc-Si layer, and an n+-Si substrate,...
Romain Mentek, Daihei Hippo, Bernard Gelloz, Nobuyoshi Koshida
Materials Science and Engineering B: Solid-State Materials for Advanced Technology   190 33-40   Jan 2014
© 2014 Elsevier B.V. All rights reserved. We have investigated photovoltaic effect in electrochemically etched nanocrystalline porous silicon (nc-PSi) thin layer for potential application as a wide-gap absorber for solar cells. The free-standing n...
B. Gelloz, R. Mentek, N. Koshida
ECS Journal of Solid State Science and Technology   3    Jan 2014
Heavily oxidized porous silicon exhibits a strong blue light emission band including a long-lived phosphorescence component, particularly strong below 200 K. Its origin is related to molecular species in the silicon/silicon oxide nanostructure. In...
Wiem Bousslama, Brigitte Sieber, Habib Elhouichet, Bernard Gelloz, Ahmed Addad, Mokhtar Férid
Journal of Physics D: Applied Physics   46    Dec 2013
Porous anodic alumina (PAA), with large pore diameters (up to 100 nm), was used as a substrate for the growth of ZnO nanostructures. Almost unstrained ZnO nanoparticles of less than 8 nm in size were prepared by the spin-on method and annealed at ...
Lianhua Jin, Eiichi Kondoh, Toshifumi Oya, Bernard Gelloz
Thin Solid Films   545 357-360   Oct 2013
Supercritical carbon dioxide (CO2) fluid has been used as a reaction media to deposit copper into porous silicon (PS).The deposited layers were investigated in terms of the field emission scanning electron microscopy, X-ray diffraction, and energy...
W. Stambouli, H. Elhouichet, B. Gelloz, M. Férid
Journal of Luminescence   138 201-208   Mar 2013
Tellurite glasses doped with trivalent europium were prepared by the conventional melt quenching technique, in the chemical composition of (85-x) TeO2+5La2O3+10TiO2+xEu 2O3 by varying the concentration of the rare-earth ion in the order 0.5, 1 and...
T. Ohta, B. Gelloz, A. Kojima, N. Koshida
Applied Physics Letters   102    Jan 2013
It is shown that the nanocryatalline silicon ballistic electron emitter operates in a SiCl4 solution without using any counter electrodes and that thin amorphous Si films are efficiently deposited on the emitting surface with no contaminations and...
Gelloz B, Loni A, Canham L, Koshida N
Nanoscale research letters   7(1) 382   Jul 2012   [Refereed]
Wiem Bousslama, Habib Elhouichet, Bernard Gelloz, Brigitte Sieber, Ahmed Addad, Myriam Moreau, Mokhtar Férid, Nobuyoshi Koshida
Japanese Journal of Applied Physics   51    Apr 2012
ZnO nanoparticles were synthesized using sol-gel method. The structural and optical properties were investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), high resolution TEM (HRTEM), R...
Romain Mentek, Bernard Gelloz, Nobuyoshi Koshida
Japanese Journal of Applied Physics   51    Feb 2012
Nanocrystalline porous silicon (nc-PSi), a material already widely studied for application in photonics, optoelectronics and sensing devices, is currently under investigation as an active element in photodetection and photovoltaic application as w...
W. Stambouli, H. Elhouichet, B. Gelloz, M. Férid, N. Koshida
Journal of Luminescence   132 205-209   Jan 2012
In this work, structural, thermal and optical properties of Eu3 doped TeO2La2O3TiO2 glass were investigated. The differential scanning calorimetry (DSC) measurements reveal an important stability factor ΔT=143.52 K, which indicates the good therma...
Toshiyuki Ohta, Bernard Gelloz, Nobuyoshi Koshida
Japanese Journal of Applied Physics   50    Jun 2011
The use of a nanocrystalline silicon (nc-Si) ballistic electron emitter in metal-salt solutions induces the deposition of thin metal films. The nc-Si emitter is composed of a thin Au/Ti film, an anodized polycrystalline Si layer, and an n +-Si sub...
Nobuyoshi Koshida, Toshiyuki Ohta, Yoshiyuki Hirano, Romain Mentek, Bernard Gelloz
Key Engineering Materials   470 20-26   Mar 2011
The particular physical functions of quantum-sized silicon have been investigated, along with exploration of their potential device applications. A strong confinement effect fully modifies the original optical, electrical, and thermal properties o...
Toshiyuki Ohta, Bernard Gelloz, Nobuyoshi Koshida
Japanese Journal of Applied Physics   50    Jan 2011
It is shown that a nanocrystalline silicon (nc-Si) ballistic electron emitter acts as an active electrode in a metal-salt solution (such as CuSO 4 solution). The nc-Si emitter is composed of a thin Au film (1μnm thick), anodized polycrystalline la...
B. Gelloz, R. Mentek, T. Djenizian, F. Dumur, L. Jin, N. Koshida
Journal of the Electrochemical Society   157    Nov 2010
The electrochemical deposition of poly(para-phenylene)vinylene (PPV) into the pores of porous silicon (PSi) has been investigated using acetonitrile as solvent and p -xylylene- α, α′ -bis(triphenylphosphonium chloride) as precursor. PPV was succes...
Bernard Gelloz, Noboru Harima, Hideki Koyama, Habib Elhouichet, Nobuyoshi Koshida
Applied Physics Letters   97    Oct 2010
Nanocomposites consisting of oxidized porous Si (OPSi) impregnated with rhodamine 110 (Rh110) molecules are characterized in terms of luminescence properties. The photoluminescence and its polarization memory strongly indicates a trace of energy t...
Masayuki Fujita, Bernard Gelloz, Nobuyoshi Koshida, Susumu Noda
Applied Physics Letters   97    Sep 2010
We propose and demonstrate the application of high-pressure water-vapor annealing (HWA) to silicon photonic crystals for surface passivation. We find that the photoluminescence intensity from a sample treated with HWA is enhanced by a factor of ∼6...
Toshiyuki Ohta, Bernard Gelloz, Nobuyoshi Koshida
Electrochemical and Solid-State Letters   13    Aug 2010
A thin solid-film deposition scheme is presented based on electron injection from a planar ballistic cold emitter into a metal-salt solution. Under the emitter operation in CuSO4 solutions without using any counter electrodes, thin polycrystalline...
T. Djenizian, B. Gelloz, F. Dumur, C. Chassigneux, L. Jin, N. Koshida
Journal of the Electrochemical Society   157    Apr 2010
In this work, the direct electropolymerization of poly(para-phenylene) vinylene (PPV) is reported onto silicon and porous silicon substrates. The morphology as well as the chemical properties of electrodeposited PPV are investigated by microscopy ...
Bernard Gelloz, Nobuyoshi Koshida
Thin Solid Films   518 3276-3279   Apr 2010
The effects of high-pressure water vapor annealing (HWA), electrochemical oxidation, and substrate resistivity on the properties of porous silicon Bragg mirrors and photoluminescent cavities have been investigated. The photonic structures treated ...
Romain Mentek, Bernard Gelloz, Nobuyoshi Koshida
Japanese Journal of Applied Physics   49    Apr 2010
The fabrication of self-standing thin layers of nanocrystalline silicon to use as a top-cell in multijunction silicon-based solar cells has been investigated. Study on the effects of different oxidation processes such as rapid thermal oxidation (R...
Jin L, Kasahara M, Gelloz B, Takizawa K
Optics letters   35(4) 595-597   Feb 2010   [Refereed]
A. Chouket, H. Elhouichet, H. Koyama, B. Gelloz, M. Oueslati, N. Koshida
Thin Solid Films   518    Jan 2010
Porous silicon (PSi)-laser dye composites were obtained by simply immersing PSi in ethanolic solutions of rhodamine 6G (Rh6G), rhodamine B (RhB), and RhB:Rh6G mixture. Partially oxidized PSi was also used as a host matrix. Fourier transform infrar...
Brigitte Sieber, Hongqin Liu, Gaëlle Piret, Jacky Laureyns, Pascal Roussel, Bernard Gelloz, Sabine Szunerits, Rabah Boukherroub
Journal of Physical Chemistry C   113 13643-13650   Aug 2009
The paper reports on the optical properties of ZnO nanostructures elaborated on a zinc foil substrate by a simple chemical approach. The doping type and density of the ZnO nanostructures were evaluated using electrochemical impedance spectroscopy....
Bernard Gelloz, Nobuyoshi Koshida
Applied Physics Letters   94    Jun 2009
It is shown that an appropriate combination of thermal oxidation and high-pressure water vapor annealing for nanosilicon leads to efficient blue-band phosphorescence with a lifetime of several seconds. Based on spectroscopic analyses on both the t...
Bernard Gelloz, Romain Mentek, Nobuyoshi Koshida
Japanese Journal of Applied Physics   48    Apr 2009
The effects of a combination of thermal oxidation at various temperatures and high-pressure water vapor annealing (HWA) on the luminescence and structural characteristics of nanocrystalline porous Si (PSi) have been investigated. The influences of...
A. Chouket, B. Gelloz, H. Koyama, H. Elhouichet, M. Oueslati, N. Koshida
Journal of Luminescence   129 1332-1335   Jan 2009
We have studied the effect of high-pressure water-vapor annealing (HWA) on the excitation energy transfer from Si nanocrystals to dye molecules in porous Si layers. Efficient photoluminescence, originating from both RhB molecules and Si nanocrysta...
B. Gelloz, H. Koyama, N. Koshida
Thin Solid Films   517 376-379   Nov 2008
The polarization memory (PM) effect in the blue and red photoluminescence (PL) of p-type porous Si (PS) treated by high-pressure water vapor annealing (HWA) has been investigated. HWA induces a significant blue PL emission at about 450 nm, togethe...

Misc

 
Bernard Gelloz
Handbook of Porous Silicon: Second Edition   1-2 449-462   Jul 2018
© Springer International Publishing AG, part of Springer Nature 2018. All rights are reserved. The photoluminescence of mesoporous silicon and silicon nanocrystals has received enormous study over the last 25 years. The spectroscopic nature and ef...
Bernard Gelloz
Handbook of Porous Silicon: Second Edition   1-2 487-499   Jul 2018
© Springer International Publishing AG, part of Springer Nature 2018. All rights are reserved. The performance of porous silicon visible light-emitting diodes is reviewed and compared to those of silicon nanocrystals prepared by other fabrication ...
B. Gelloz, H. Fuwa, E. Kondoh, L. Jin
ECS Transactions   86 71-81   Jan 2018
© The Electrochemical Society. Photo-assisted etching of porous silicon (PSi) in hydrofluoric acid (HF) solution has been, so far, not well controlled and characterized. In this paper, the progress of the photoetching of PSi formed from lightly-do...
B. Gelloz, K. Ichimura, H. Fuwa, E. Kondoh, L. Jin
ECS Transactions   75 63-75   Jan 2016
© 2016 The Electrochemical Society. The progress of the chemical dissolution of porous silicon (PSi), formed from lightly-doped p-type silicon, in HF was monitored by recording in situ the photocurrent from a monochromatic illumination. The photoc...
Bernard Gelloz
Handbook of Porous Silicon   307-320   Jan 2014
© Springer International Publishing Switzerland 2014. All rights are reserved. The photoluminescence of mesoporous silicon and silicon nanocrystals has received enormous study over the last 25 years. The spectroscopic nature and efficiency of vari...
Bernard Gelloz
Handbook of Porous Silicon   321-333   Jan 2014
© Springer International Publishing Switzerland 2014. All rights are reserved. The performance of porous silicon visible light-emitting diodes is reviewed and compared to those of silicon nanocrystals prepared by other fabrication routes. Efficien...
N. Koshida, N. Ikegami, A. Kojima, R. Mentek, R. Suda, M. Yagi, J. Shirakashi, B. Gelloz, N. Mori
ECS Transactions   61 47-54   Jan 2014
© 2014 by The Electrochemical Society. The physical property of nanocrystalline silicon (nc-Si) dots as a confined wide-gap material relates not only to photonics, but also to electronics. As supported experimentally and theoretically, the electro...
N. Koshida, R. Suda, M. Yagi, A. Kojima, R. Mentek, B. Gelloz, N. Mori, J. Shirakashi
ECS Transactions   64 405-410   Jan 2014
© The Electrochemical Society. It is shown that a wet process for thin Si and Ge films deposition based on the ballistic electron injection into solutions is available for SiGe. A nanocrystalline silicon (nc-Si) diode is composed of a thin Au (10 ...
B. Gelloz, R. Mentek, N. Koshida
ECS Transactions   53 103-111   Oct 2013
Heavily oxidized porous silicon exhibits a strong blue light emission band including a long-lived phosphorescence component, particularly strong below 200 K, and which was modeled as the result of recombinations from triplet states to ground level...
N. Koshida, N. Ikegami, A. Kojima, R. Mentek, B. Gelloz
ECS Transactions   53 95-102   Oct 2013
In nanocrystalline silicon (nc-Si) dots interconnected with tunnel oxides, the characteristic electron transport mode appears followed by highly hot electron effects: avalanche photoconduction and quasi-ballistic electron emission. Analysis of the...
Nobuyoshi Koshida, Bernard Gelloz
Nanostructured Semiconductors: From Basic Research to Applications   619-653   Jan 2013
T. Ohta, R. Mentek, B. Gelloz, N. Mori, N. Koshida
ECS Transactions   50 691-698   Dec 2012
An alternative wet process for depositing thin Si and Ge films is presented based on the ballistic electron injection into solutions. A nanocrystalline silicon (nc-Si) diode, composed of a thin Au (10 nm), nc-Si layer (~1 μm), polycrystalline sili...
Bernard Gelloz, Romain Mentek, Nobuyoshi Koshida
Physica Status Solidi (C) Current Topics in Solid State Physics   9 2318-2321   Dec 2012
Hybrid thin films consisting of oxidized nano-silicon doped with terbium have been fabricated. Nano-silicon was formed by electrochemical etching of silicon wafers. Terbium was incorporated into nano-silicon pores by electrochemical deposition. Di...
B. Gelloz, N. Koshida
ECS Transactions   45 177-189   Nov 2012
Heavily oxidized porous silicon treated by high-pressure water vapor annealing exhibits a strong blue light emission band which includes a long-lived phosphorescence (Ph) component. This Ph is particularly strong below 200 K. Above 200 K, it exper...
N. Koshida, T. Ohta, B. Gelloz
ECS Transactions   45 221-228   Nov 2012
A novel wet fabrication technique of quantum-scale Si and Ge thin films is presented based on the ballistic electron effect in solutions. A nanocrystalline silicon (nc-Si) diode, composed of a thin Au (10 nm), nc-Si layer (∼1 μm), polycrystalline ...
N. Koshida, T. Ohta, Y. Hirano, R. Mentek, B. Gelloz
Proceedings of International Conference NANOMEETING 2011: Physics, Chemistry and Applications of Nanostructures - Reviews and Short Notes   11-18   Dec 2011
The characteristic photonic, electronic, and acoustic functions of quantum-sized nanosilicon are presented along with the exploration of the device applications. Based on the band gap control by appropriate oxidation, the luminescence band can be ...
F. Hamadache, L. Zougar, K. Mokeddem, A. Brighet, B. Gelloz
ECS Transactions   33 209-225   Dec 2011
The Photoelectrical properties of hydrogenated amorphous silicon thin films (a-Si:H) deposited on porous silicon (PSi) were investigated. Porous Si layers were formed by electrochemical etching of p +-type crystalline Si in a hydrofluoric solution...
Lianhua Jin, Takashi Tsutaki, Bernard Gelloz
Proceedings of SPIE - The International Society for Optical Engineering   8160    Oct 2011
The Stokes parameters of scattering from diffuse glass plates were measured and analyzed as a function a virtual scattering angle and a longitude scattering angle. Both of these scattering angles are defined for the facet model. The facet model fo...
Nobuyoshi Koshida, Toshiyuki Ohta, Bernard Gelloz, Akira Kojima
Current Opinion in Solid State and Materials Science   15 183-187   Jan 2011
A quantum confinement effect renders silicon a functional wide-gap material with useful functions. For instance, a diode based on nanocrystalline silicon (nc-Si) exhibits characteristic quasi-ballistic emission effects in various media. As means f...
B. Gelloz, M. Mentek, T. Djenizian, F. Dumur, L. Jin, N. Koshida
ECS Transactions   28 91-103   Dec 2010
The electrochemical deposition of poly(para-phenylene)vinylene (PPV) into the pores of porous silicon (PSi) has been investigated using acetonitrile as solvent and p-xylylene-α,α′-bis(triphenylphosphonium chloride as precursor. PPV was successfull...
Masayuki Fujita, Bernard Gelloz, Nobuyoshi Koshida, Susumu Noda
IEEE International Conference on Group IV Photonics GFP   350-352   Dec 2010
We propose and demonstrate the application of high-pressure water vapor annealing (HWA) to silicon photonic-crystal nanocavities for surface passivation. We find that HWA boosts light emission due to the reduction of surface recombination beyond s...
Bernard Gelloz, Nobuyoshi Koshida
IEEE International Conference on Group IV Photonics GFP   341-343   Dec 2010
Bernard Gelloz
Silicon Nanocrystals: Fundamentals, Synthesis and Applications   349-393   Apr 2010
Farida Hamadache, Bernard Gelloz
Physica Status Solidi (C) Current Topics in Solid State Physics   6 1689-1693   Dec 2009
This work reports on the use of the cyclic voltametry technique to study the electrochemical behavior of porous p+-type silicon (PS) contacted by aqueous solutions containing Fe2+ and Co2+ electro-actives species. Current-potential (I-V) measureme...
T. Djenizian, B. Gelloz, F. Dumur, C. Chassigneux, N. Koshida
ECS Transactions   25 121-130   Dec 2009
Poly(para-phenylene)vinylene (PPV) was electrochemically deposited onto silicon and porous silicon substrates. The structures of the films were characterized by SEM and AFM. The PPV layers show good uniformity and flatness. Their emission properti...
Toshiyuki Ohta, Shuichiro Ogawa, Bernard Gelloz, Nobuyoshi Koshida
Technical Digest - 2009 22nd International Vacuum Nanoelectronics Conference, IVNC 2009   85-86   Nov 2009
N. Koshida, A. Asami, B. Gelloz
Technical Digest - International Electron Devices Meeting, IEDM      Dec 2008
There is an extremely high contrast in the thermal properties between single-crystalline silicon and quantum-sized nanocrystalline silicon. As previously reported, it makes possible to generate acoustic wave only by thermal transfer without any me...
B. Gelloz, K. Murata, T. Ohta, M. Ghulinyan, L. Pavesi, D. J. Lockwood, N. Koshida
ECS Transactions   16 211-219   Dec 2008
As-anodized porous Si photonic structures experience drifts of their optical properties upon prolonged exposure to air due to spontaneous oxidation of the metastabe Si-H bonds terminating the pores surface. This is a critical limitation in the cas...
B. Gelloz, M. Masunaga, T. Shirasawa, R. Mentek, T. Ohta, N. Koshida
ECS Transactions   16 195-200   Dec 2008
The presence of a magnetic field during anodization of Si in HF solution can drastically influence the resulting porous Si morphology. The effect of the strength of the magnetic field was investigated. The magnetic field enables the realization of...
B. Gelloz, A. Takeuchi, N. Koshida
2008 5th International Conference on Group IV Photonics, GFP   317-319   Nov 2008
Nanocrystalline Si quantum dots were introduced in SiO2 and Si3N4 layers by ion implantation followed by annealing. Their optoelectronic characteristics were much improved by a significant reduction of defects as in the case of nanocrystalline mat...
B. Gelloz, T. Shibata, N. Koshida
Physica Status Solidi (C) Current Topics in Solid State Physics   4 2141-2144   Dec 2007
Stabilization of electroluminescence (EL) from nanocrystalline porous silicon diodes has been achieved by using high pressure water vapor annealing (HWA) of nanocrystalline porous silicon (PS). HWA is performed at 260 °C and a pressure of 1.3 MPa....
B. Gelloz, A. Kojima, N. Koshida
Proceedings - Electrochemical Society   PV 2004-13 297-302   Dec 2005
A high-pressure H2O vapor annealing technique has been applied to nanocrystalline porous silicon (PS). The effects on the photoluminescence (PL) are reported here for PS samples of different initial porosities, electrochemically oxidized ore not, ...
B. Gelloz, H. Sano, R. Boukherroub, D. D.M. Wayner, D. J. Lockwood, N. Koshida
Physica Status Solidi C: Conferences   2 3273-3277   Nov 2005
Stabilization of electroluminescence from nanocrystalline porous silicon diodes has been achieved by replacing silicon-hydrogen bonds terminating the surface of nanocrystalline silicon with more stable siliconcarbon (Si-C) bonds. Hydrosilylation o...
Akira Kiuchi, Bernard Gelloz, Akira Kojima, Nobuyoshi Koshida
Materials Research Society Symposium Proceedings   832 207-212   Aug 2005
It is shown that the periodic stacked structures of nanocrystalline porous silicon (nc-PS) layers with controlled densities and elastic properties act as an acoustic band crystal (ABC) device. Supposing that the periodic nc-PS layers are formed by...
Bernard Gelloz, Akira Kojima, Nobuyoshi Koshida
Materials Research Society Symposium Proceedings   832 141-146   Aug 2005
A high-pressure H2O vapor annealing technique has been applied to nanocrystalline porous silicon (PS). The effects on the photoluminescence (PL) are reported here for PS samples of different initial porosities, in different conditions of the annea...
N. Koshida, B. Gelloz, A. Kojima, T. Migita, Y. Nakajima, T. Kihara, T. Ichihara, Y. Watabe, T. Komoda
Materials Research Society Symposium - Proceedings   737 801-812   Jul 2003
For quantum-sized nanocrystalline silicon (nc-Si), various optical and electronic effects have been clarified in addition to a significant band gap widening. As typical examples of these induced effects, some emission properties of nanocrystalline...
Bernard Gelloz, Nobuyoshi Koshida
Materials Research Society Symposium - Proceedings   737 581-586   Jul 2003
Efficient electroluminescence (EL) is obtained at low operating voltages (<3 V) from n+-type silicon-electrochemically oxidized thin nanocrystalline porous silicon (PS)-amorphous carbon-Indium tin oxide (ITO) junctions. The effects of a few nanome...
Nobuyoshi Koshida, Bernard Gelloz
Current Opinion in Colloid and Interface Science   4 309-313   Aug 1999
Some significant progresses have been attained in science and technology of nanocrystalline porous silicon. Especially important accomplishments are control of interfacial and structural properties, formation of nanocomposites, observation of band...
B. Gelloz, T. Nakagawa, N. Koshida
Materials Research Society Symposium - Proceedings   536 15-20   Jan 1999
External quantum efficiencies (EQEs) of electroluminescent devices based on porous silicon (PS) reported to date are still below the minimum requirements for practical applications such as display devices (1%) and optical interconnection (10%). Po...

Conference Activities & Talks

 
Lianhua Jin, Benard Gelloz, Toru Yoshizawa
Proceedings of SPIE - The International Society for Optical Engineering   1 Jan 2019   
© Optics & Photonics International Congress 2019. A measurement method for the cylindrical openings profile of translucent objects is introduced. The optical probe consists of a semiconductor laser, a right circular conical mirror, and a camera ...
Lianhua Jin, Taiki Akiyama, Yuki Iizuka, Eiichi Kondoh, Benard Gelloz
Proceedings of SPIE - The International Society for Optical Engineering   1 Jan 2019   
© Optics & Photonics International Congress 2019. Imaging ellipsometry studies of n+-type porous silicon layers are presented. The morphology of n+-type porous silicon is discussed in accordance with two-dimensional measurement results of refrac...
Photo-Assisted Etching of Porous Silicon in Hydrofluoric Acid by Monochromatic Light [Invited]
B. Gelloz, H. Fuwa, E. Kondoh, and L. Jin
ECS Fall Meeting   2 Oct 2018   
Lianhua Jin, Eiichi Kondoh, Hiroyuki Kowa, Bernard Gelloz
Proceedings of SPIE - The International Society for Optical Engineering   1 Jan 2018   
© 2018 SPIE. A method for extracting properties of individual components of a retader-linear diattenuator- retarder system is proposed. Since the evaluation performs in noncontact and nondestructive way, this method is applicable to inspect as-pro...
Lianhua Jin, Nobuto Miyatsu, Eiichi Kondoh, Bernard Gelloz, Naobumi Kanazawa, Toru Yoshizawa
Proceedings of SPIE - The International Society for Optical Engineering   1 Jan 2018   
© 2018 SPIE. Dimensional measurement of internal profile is conventionally performed mechanically with instruments like vernier calipers. Here, we cope with the measurement by using an optical caliper. The caliper consists of a semiconductor laser...
Porous Silicon Dissolution Monitoring and Optical Constants Measurement using in situ Photoconduction in HF [Invited]
B. Gelloz, K. Ichimura, H. Fuwa, E. Kondoh, and L. Jin
ECS Fall Meeting   4 Oct 2016   
Characteristics of nano-porous silicon luminescence and electroluminescence, and effects of various treatments [Invited]
GELLOZ Bernard
Workshop ”Advancement of Group IV Nanostructures Nanophotonics and Nanoelectronics   19 Nov 2015   
Ultraviolet and long-lived Blue Luminescence of oxidized Porous Silicon [Invited]
B. Gelloz, R. Mentek and N. Koshida
ECS Spring Meeting   13 May 2014   
Relaxation Processes and Functions of Blue Phosphorescent Porous Silicon [Invited]
B. Gelloz, R. Mentek and N. Koshida
ECS Fall Meeting   8 Oct 2012   
Blue Phosphorescence in Oxidized Nano-Porous Silicon and Related Functions [Invited]
B. Gelloz and N. Koshida
ECS Spring Meeting   8 May 2012   
Electropolymerized Poly(para-phenylene)vinylene Films onto and Inside Porous Si [Invited]
B. Gelloz, R. Mentek, T. Djenizian, F. Dumur, L. Jin and N. Koshida
ECS Spring Meeting   26 Apr 2010   

Research Grants & Projects

 
Scientific Research C 16K04898
MEXT: 
Project Year: Apr 2016 - Mar 2019    Investigator(s): GELLOZ Bernard Jacques
– “Safety Net” from Nagoya Univ. (科学研究費挑戦セーフティネット)
MEXT: 
Project Year: Nov 2014 - Mar 2015    Investigator(s): GELLOZ Bernard Jacques
Scientific Research C
MEXT: 
Project Year: Apr 2010 - Mar 2013    Investigator(s): GELLOZ Bernard Jacques
Scientific Research C
MEXT: 
Project Year: Apr 2008 - Mar 2010    Investigator(s): GELLOZ Bernard Jacques
– “SAKURA” Researcher exchange program between our laboratory and Aix-Marseille University (France)
MEXT: CNRS/JSPS
Project Year: Apr 2008 - Mar 2009    Investigator(s): GELLOZ Bernard Jacques
Young Scientists B
MEXT: 
Project Year: Apr 2006 - Mar 2008    Investigator(s): GELLOZ Bernard Jacques
Young Scientists B
MEXT: 
Project Year: Apr 2003 - Mar 2005    Investigator(s): GELLOZ Bernard Jacques
– “Young Research Fellowship II” from the 21st Century COE (Center Of Excellence) Program on Future Nano-materials
MEXT: 
Project Year: Apr 2003 - Mar 2005    Investigator(s): GELLOZ Bernard Jacques
Marubun Research and Encouragement Award
Marubun Research Promotion Foundation: 
Project Year: Apr 2003 - Mar 2004    Investigator(s): GELLOZ Bernard Jacques
Postdoctoral project
Science and Technology Agency: 
Project Year: Jan 2000 - Mar 2001    Investigator(s): GELLOZ Bernard Jacques
Japan Society for the Promotion of Science
MEXT: 
Project Year: Nov 1997 - Nov 1999    Investigator(s): GELLOZ Bernard Jacques

Patents

 
特願08F007PCT/CN0 : シリコン基材の加工方法とその加工品および加工装置
蕨迫 光紀,島田 壽一,越田 信義,Bernard Gelloz
特願2008-223583 : 励起波長により発光ピーク制御可能なシリコン系青色-緑色燐光材料及びその製造方法
越田信義・B. Gelloz

Social Contribution

 
– Review Editor for the Editorial Board of Frontiers in Optics and Materials.
[Editor]  Frontiers (www.frontiersin.org)  Oct 2017
Journees Science et Technologie, Tokyo, Japan.
[Organizing Member]  2001
Vice-president of ScienceScope (Association of French-speaking researchers and students in Japan)
[Contribution]  2001