Microporous silicon has been formed by anodization of p-type silicon. The pores with diameter less than 2 nm were filled with copper by using supercritical carbon dioxide fluid. The copper-filled layers were investigated with the field emission sc...
N. Koshida, A. Kojima, T. Ohta, R. Mentek, B. Gelloz, N. Mori, J. Shirakashia
ECS Solid State Letters 3 Mar 2014
An alternative wet deposition process of thin group-IV films is demonstrated under the hot electron injection into solutions. A nanocrystalline silicon (nc-Si) device, composed of a thin Au/Ti film, an anodized nc-Si layer, and an n+-Si substrate,...
ECS Journal of Solid State Science and Technology 3 Jan 2014
Heavily oxidized porous silicon exhibits a strong blue light emission band including a long-lived phosphorescence component, particularly strong below 200 K. Its origin is related to molecular species in the silicon/silicon oxide nanostructure. In...
Wiem Bousslama, Brigitte Sieber, Habib Elhouichet, Bernard Gelloz, Ahmed Addad, Mokhtar Férid
Journal of Physics D: Applied Physics 46 Dec 2013
Porous anodic alumina (PAA), with large pore diameters (up to 100 nm), was used as a substrate for the growth of ZnO nanostructures. Almost unstrained ZnO nanoparticles of less than 8 nm in size were prepared by the spin-on method and annealed at ...
Lianhua Jin, Eiichi Kondoh, Toshifumi Oya, Bernard Gelloz
Thin Solid Films 545 357-360 Oct 2013
Supercritical carbon dioxide (CO2) fluid has been used as a reaction media to deposit copper into porous silicon (PS).The deposited layers were investigated in terms of the field emission scanning electron microscopy, X-ray diffraction, and energy...
Tellurite glasses doped with trivalent europium were prepared by the conventional melt quenching technique, in the chemical composition of (85-x) TeO2+5La2O3+10TiO2+xEu 2O3 by varying the concentration of the rare-earth ion in the order 0.5, 1 and...
It is shown that the nanocryatalline silicon ballistic electron emitter operates in a SiCl4 solution without using any counter electrodes and that thin amorphous Si films are efficiently deposited on the emitting surface with no contaminations and...
Wiem Bousslama, Habib Elhouichet, Bernard Gelloz, Brigitte Sieber, Ahmed Addad, Myriam Moreau, Mokhtar Férid, Nobuyoshi Koshida
Japanese Journal of Applied Physics 51 Apr 2012
ZnO nanoparticles were synthesized using sol-gel method. The structural and optical properties were investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), high resolution TEM (HRTEM), R...
Nanocrystalline porous silicon (nc-PSi), a material already widely studied for application in photonics, optoelectronics and sensing devices, is currently under investigation as an active element in photodetection and photovoltaic application as w...
W. Stambouli, H. Elhouichet, B. Gelloz, M. Férid, N. Koshida
Journal of Luminescence 132 205-209 Jan 2012
In this work, structural, thermal and optical properties of Eu3 doped TeO2La2O3TiO2 glass were investigated. The differential scanning calorimetry (DSC) measurements reveal an important stability factor ΔT=143.52 K, which indicates the good therma...
The use of a nanocrystalline silicon (nc-Si) ballistic electron emitter in metal-salt solutions induces the deposition of thin metal films. The nc-Si emitter is composed of a thin Au/Ti film, an anodized polycrystalline Si layer, and an n +-Si sub...
Nobuyoshi Koshida, Toshiyuki Ohta, Yoshiyuki Hirano, Romain Mentek, Bernard Gelloz
Key Engineering Materials 470 20-26 Mar 2011
The particular physical functions of quantum-sized silicon have been investigated, along with exploration of their potential device applications. A strong confinement effect fully modifies the original optical, electrical, and thermal properties o...
It is shown that a nanocrystalline silicon (nc-Si) ballistic electron emitter acts as an active electrode in a metal-salt solution (such as CuSO 4 solution). The nc-Si emitter is composed of a thin Au film (1μnm thick), anodized polycrystalline la...
B. Gelloz, R. Mentek, T. Djenizian, F. Dumur, L. Jin, N. Koshida
Journal of the Electrochemical Society 157 Nov 2010
The electrochemical deposition of poly(para-phenylene)vinylene (PPV) into the pores of porous silicon (PSi) has been investigated using acetonitrile as solvent and p -xylylene- α, α′ -bis(triphenylphosphonium chloride) as precursor. PPV was succes...
Bernard Gelloz, Noboru Harima, Hideki Koyama, Habib Elhouichet, Nobuyoshi Koshida
Applied Physics Letters 97 Oct 2010
Nanocomposites consisting of oxidized porous Si (OPSi) impregnated with rhodamine 110 (Rh110) molecules are characterized in terms of luminescence properties. The photoluminescence and its polarization memory strongly indicates a trace of energy t...
Masayuki Fujita, Bernard Gelloz, Nobuyoshi Koshida, Susumu Noda
Applied Physics Letters 97 Sep 2010
We propose and demonstrate the application of high-pressure water-vapor annealing (HWA) to silicon photonic crystals for surface passivation. We find that the photoluminescence intensity from a sample treated with HWA is enhanced by a factor of ∼6...
Electrochemical and Solid-State Letters 13 Aug 2010
A thin solid-film deposition scheme is presented based on electron injection from a planar ballistic cold emitter into a metal-salt solution. Under the emitter operation in CuSO4 solutions without using any counter electrodes, thin polycrystalline...
T. Djenizian, B. Gelloz, F. Dumur, C. Chassigneux, L. Jin, N. Koshida
Journal of the Electrochemical Society 157 Apr 2010
In this work, the direct electropolymerization of poly(para-phenylene) vinylene (PPV) is reported onto silicon and porous silicon substrates. The morphology as well as the chemical properties of electrodeposited PPV are investigated by microscopy ...
The effects of high-pressure water vapor annealing (HWA), electrochemical oxidation, and substrate resistivity on the properties of porous silicon Bragg mirrors and photoluminescent cavities have been investigated. The photonic structures treated ...
The fabrication of self-standing thin layers of nanocrystalline silicon to use as a top-cell in multijunction silicon-based solar cells has been investigated. Study on the effects of different oxidation processes such as rapid thermal oxidation (R...
A. Chouket, H. Elhouichet, H. Koyama, B. Gelloz, M. Oueslati, N. Koshida
Thin Solid Films 518 Jan 2010
Porous silicon (PSi)-laser dye composites were obtained by simply immersing PSi in ethanolic solutions of rhodamine 6G (Rh6G), rhodamine B (RhB), and RhB:Rh6G mixture. Partially oxidized PSi was also used as a host matrix. Fourier transform infrar...
Journal of Physical Chemistry C 113 13643-13650 Aug 2009
The paper reports on the optical properties of ZnO nanostructures elaborated on a zinc foil substrate by a simple chemical approach. The doping type and density of the ZnO nanostructures were evaluated using electrochemical impedance spectroscopy....
It is shown that an appropriate combination of thermal oxidation and high-pressure water vapor annealing for nanosilicon leads to efficient blue-band phosphorescence with a lifetime of several seconds. Based on spectroscopic analyses on both the t...
The effects of a combination of thermal oxidation at various temperatures and high-pressure water vapor annealing (HWA) on the luminescence and structural characteristics of nanocrystalline porous Si (PSi) have been investigated. The influences of...
A. Chouket, B. Gelloz, H. Koyama, H. Elhouichet, M. Oueslati, N. Koshida
Journal of Luminescence 129 1332-1335 Jan 2009
We have studied the effect of high-pressure water-vapor annealing (HWA) on the excitation energy transfer from Si nanocrystals to dye molecules in porous Si layers. Efficient photoluminescence, originating from both RhB molecules and Si nanocrysta...
The polarization memory (PM) effect in the blue and red photoluminescence (PL) of p-type porous Si (PS) treated by high-pressure water vapor annealing (HWA) has been investigated. HWA induces a significant blue PL emission at about 450 nm, togethe...
Heavily oxidized porous silicon exhibits a strong blue light emission band including a long-lived phosphorescence component, particularly strong below 200 K, and which was modeled as the result of recombinations from triplet states to ground level...
N. Koshida, N. Ikegami, A. Kojima, R. Mentek, B. Gelloz
ECS Transactions 53 95-102 Oct 2013
In nanocrystalline silicon (nc-Si) dots interconnected with tunnel oxides, the characteristic electron transport mode appears followed by highly hot electron effects: avalanche photoconduction and quasi-ballistic electron emission. Analysis of the...
T. Ohta, R. Mentek, B. Gelloz, N. Mori, N. Koshida
ECS Transactions 50 691-698 Dec 2012
An alternative wet process for depositing thin Si and Ge films is presented based on the ballistic electron injection into solutions. A nanocrystalline silicon (nc-Si) diode, composed of a thin Au (10 nm), nc-Si layer (~1 μm), polycrystalline sili...
Physica Status Solidi (C) Current Topics in Solid State Physics 9 2318-2321 Dec 2012
Hybrid thin films consisting of oxidized nano-silicon doped with terbium have been fabricated. Nano-silicon was formed by electrochemical etching of silicon wafers. Terbium was incorporated into nano-silicon pores by electrochemical deposition. Di...
Heavily oxidized porous silicon treated by high-pressure water vapor annealing exhibits a strong blue light emission band which includes a long-lived phosphorescence (Ph) component. This Ph is particularly strong below 200 K. Above 200 K, it exper...
A novel wet fabrication technique of quantum-scale Si and Ge thin films is presented based on the ballistic electron effect in solutions. A nanocrystalline silicon (nc-Si) diode, composed of a thin Au (10 nm), nc-Si layer (∼1 μm), polycrystalline ...
N. Koshida, T. Ohta, Y. Hirano, R. Mentek, B. Gelloz
Proceedings of International Conference NANOMEETING 2011: Physics, Chemistry and Applications of Nanostructures - Reviews and Short Notes 11-18 Dec 2011
The characteristic photonic, electronic, and acoustic functions of quantum-sized nanosilicon are presented along with the exploration of the device applications. Based on the band gap control by appropriate oxidation, the luminescence band can be ...
F. Hamadache, L. Zougar, K. Mokeddem, A. Brighet, B. Gelloz
ECS Transactions 33 209-225 Dec 2011
The Photoelectrical properties of hydrogenated amorphous silicon thin films (a-Si:H) deposited on porous silicon (PSi) were investigated. Porous Si layers were formed by electrochemical etching of p +-type crystalline Si in a hydrofluoric solution...
Proceedings of SPIE - The International Society for Optical Engineering 8160 Oct 2011
The Stokes parameters of scattering from diffuse glass plates were measured and analyzed as a function a virtual scattering angle and a longitude scattering angle. Both of these scattering angles are defined for the facet model. The facet model fo...
Nobuyoshi Koshida, Toshiyuki Ohta, Bernard Gelloz, Akira Kojima
Current Opinion in Solid State and Materials Science 15 183-187 Jan 2011
A quantum confinement effect renders silicon a functional wide-gap material with useful functions. For instance, a diode based on nanocrystalline silicon (nc-Si) exhibits characteristic quasi-ballistic emission effects in various media. As means f...
B. Gelloz, M. Mentek, T. Djenizian, F. Dumur, L. Jin, N. Koshida
ECS Transactions 28 91-103 Dec 2010
The electrochemical deposition of poly(para-phenylene)vinylene (PPV) into the pores of porous silicon (PSi) has been investigated using acetonitrile as solvent and p-xylylene-α,α′-bis(triphenylphosphonium chloride as precursor. PPV was successfull...
Masayuki Fujita, Bernard Gelloz, Nobuyoshi Koshida, Susumu Noda
IEEE International Conference on Group IV Photonics GFP 350-352 Dec 2010
We propose and demonstrate the application of high-pressure water vapor annealing (HWA) to silicon photonic-crystal nanocavities for surface passivation. We find that HWA boosts light emission due to the reduction of surface recombination beyond s...
Physica Status Solidi (C) Current Topics in Solid State Physics 6 1689-1693 Dec 2009
This work reports on the use of the cyclic voltametry technique to study the electrochemical behavior of porous p+-type silicon (PS) contacted by aqueous solutions containing Fe2+ and Co2+ electro-actives species. Current-potential (I-V) measureme...
T. Djenizian, B. Gelloz, F. Dumur, C. Chassigneux, N. Koshida
ECS Transactions 25 121-130 Dec 2009
Poly(para-phenylene)vinylene (PPV) was electrochemically deposited onto silicon and porous silicon substrates. The structures of the films were characterized by SEM and AFM. The PPV layers show good uniformity and flatness. Their emission properti...
Technical Digest - International Electron Devices Meeting, IEDM Dec 2008
There is an extremely high contrast in the thermal properties between single-crystalline silicon and quantum-sized nanocrystalline silicon. As previously reported, it makes possible to generate acoustic wave only by thermal transfer without any me...
B. Gelloz, K. Murata, T. Ohta, M. Ghulinyan, L. Pavesi, D. J. Lockwood, N. Koshida
ECS Transactions 16 211-219 Dec 2008
As-anodized porous Si photonic structures experience drifts of their optical properties upon prolonged exposure to air due to spontaneous oxidation of the metastabe Si-H bonds terminating the pores surface. This is a critical limitation in the cas...
B. Gelloz, M. Masunaga, T. Shirasawa, R. Mentek, T. Ohta, N. Koshida
ECS Transactions 16 195-200 Dec 2008
The presence of a magnetic field during anodization of Si in HF solution can drastically influence the resulting porous Si morphology. The effect of the strength of the magnetic field was investigated. The magnetic field enables the realization of...
2008 5th International Conference on Group IV Photonics, GFP 317-319 Nov 2008
Nanocrystalline Si quantum dots were introduced in SiO2 and Si3N4 layers by ion implantation followed by annealing. Their optoelectronic characteristics were much improved by a significant reduction of defects as in the case of nanocrystalline mat...
Physica Status Solidi (C) Current Topics in Solid State Physics 4 2141-2144 Dec 2007
Stabilization of electroluminescence (EL) from nanocrystalline porous silicon diodes has been achieved by using high pressure water vapor annealing (HWA) of nanocrystalline porous silicon (PS). HWA is performed at 260 °C and a pressure of 1.3 MPa....
Proceedings - Electrochemical Society PV 2004-13 297-302 Dec 2005
A high-pressure H2O vapor annealing technique has been applied to nanocrystalline porous silicon (PS). The effects on the photoluminescence (PL) are reported here for PS samples of different initial porosities, electrochemically oxidized ore not, ...
B. Gelloz, H. Sano, R. Boukherroub, D. D.M. Wayner, D. J. Lockwood, N. Koshida
Physica Status Solidi C: Conferences 2 3273-3277 Nov 2005
Stabilization of electroluminescence from nanocrystalline porous silicon diodes has been achieved by replacing silicon-hydrogen bonds terminating the surface of nanocrystalline silicon with more stable siliconcarbon (Si-C) bonds. Hydrosilylation o...
Akira Kiuchi, Bernard Gelloz, Akira Kojima, Nobuyoshi Koshida
Materials Research Society Symposium Proceedings 832 207-212 Aug 2005
It is shown that the periodic stacked structures of nanocrystalline porous silicon (nc-PS) layers with controlled densities and elastic properties act as an acoustic band crystal (ABC) device. Supposing that the periodic nc-PS layers are formed by...
Materials Research Society Symposium Proceedings 832 141-146 Aug 2005
A high-pressure H2O vapor annealing technique has been applied to nanocrystalline porous silicon (PS). The effects on the photoluminescence (PL) are reported here for PS samples of different initial porosities, in different conditions of the annea...
N. Koshida, B. Gelloz, A. Kojima, T. Migita, Y. Nakajima, T. Kihara, T. Ichihara, Y. Watabe, T. Komoda
Materials Research Society Symposium - Proceedings 737 801-812 Jul 2003
For quantum-sized nanocrystalline silicon (nc-Si), various optical and electronic effects have been clarified in addition to a significant band gap widening. As typical examples of these induced effects, some emission properties of nanocrystalline...
Materials Research Society Symposium - Proceedings 737 581-586 Jul 2003
Efficient electroluminescence (EL) is obtained at low operating voltages (<3 V) from n+-type silicon-electrochemically oxidized thin nanocrystalline porous silicon (PS)-amorphous carbon-Indium tin oxide (ITO) junctions. The effects of a few nanome...
Current Opinion in Colloid and Interface Science 4 309-313 Aug 1999
Some significant progresses have been attained in science and technology of nanocrystalline porous silicon. Especially important accomplishments are control of interfacial and structural properties, formation of nanocomposites, observation of band...
Materials Research Society Symposium - Proceedings 536 15-20 Jan 1999
External quantum efficiencies (EQEs) of electroluminescent devices based on porous silicon (PS) reported to date are still below the minimum requirements for practical applications such as display devices (1%) and optical interconnection (10%). Po...
