It is shown that a wet process for thin Si and Ge films deposition based on the ballistic electron injection into solutions is available for SiGe. A nanocrystalline silicon (nc-Si) diode is composed of a thin Au (10 nm)/Ti (1 nm) film surface electrode, nc-Si layer (similar to 1 mu m), n+-Si substrate, and back contact. The electrochemical effect of ballistic hot electrons was confirmed by cyclic voltammetry analyses. Electrons are emitted from the nc-Si device on which a very small amount of SiCl4+GeCl4 solutions is dripped. After the emitter operation, thin SiGe films are deposited on the emitting surface with neither byproducts nor contaminations as in the case of thin Si and Ge films deposition. Based on the structural and compositional characterizations of deposited SiGe films, the specific features of this reduction-induced deposition mode are discussed in comparison with the conventional processes.