2008年8月
Low-loss Silicon Oxynitride Waveguides and Branches for the 850-nm-Wavelength Region
JAPANESE JOURNAL OF APPLIED PHYSICS
- 巻
- 47
- 号
- 8
- 開始ページ
- 6739
- 終了ページ
- 6743
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.1143/JJAP.47.6739
- 出版者・発行元
- JAPAN SOCIETY APPLIED PHYSICS
We developed silicon oxynitride (SiON) waveguides and branches working at around 850 nm wavelength for on-chip optical interconnection. SiON films were deposited by plasma-enhanced chemical vapor deposition (PECVD) and were very transmissive in this wavelength region. The propagation losses of fabricated waveguides were as low as 0.2-0.3 dB/cm. The branches are based on multimode interference (MMI) and exhibited excellent 3 dB characteristics. We also integrated a SiON waveguide with a Si nano-photodiode (PD) with a surface plasmon antenna. A large photocurrent of about 0.1 mA at a coupling length of only 10 mu m and a high-speed response of 17 ps were demonstrated for the waveguide-integrated Si nano-PD.
- リンク情報
-
- DOI
- https://doi.org/10.1143/JJAP.47.6739
- Web of Science
- https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000260003100025&DestApp=WOS_CPL
- 共同研究・競争的資金等の研究課題
- 新探求配線技術開発(LSI チップ光配線技術開発)
- URL
- https://iopscience.iop.org/article/10.1143/JJAP.47.6739/meta
- ID情報
-
- DOI : 10.1143/JJAP.47.6739
- ISSN : 0021-4922
- ORCIDのPut Code : 104531875
- Web of Science ID : WOS:000260003100025