2015年
A New Prediction Method for ReRAM Data Retention Statistics based on 3D Filament Structures
2015 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS)
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- 開始ページ
- 5B.4.1
- 終了ページ
- 5B.4.4
- 記述言語
- 英語
- 掲載種別
- 出版者・発行元
- IEEE
Instead of wide distributed resistance for a single bit, we introduce non-fluctuating physical parameters, filament diameter and packing factor (corresponding to oxygen vacancy concentration) to describe ReRAM bit. The quantitative 3D percolation model is developed based on direct observation of the filament structure and hopping conduction, which is confirmed with ultra-low temperature (30 K) measurement. Moreover, we provide a simulation method to obtain quantitative filament diameter, packing factor and to do the prediction of the resistance distribution after retention, which is verified with experiment.
- リンク情報
- ID情報
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- ISSN : 1541-7026
- Web of Science ID : WOS:000371888900078