論文

査読有り
2014年1月

Band-to-band photoluminescence as a probe of electron carriers in Nb-doped SrTiO3 epitaxial thin films

APPLIED PHYSICS EXPRESS
  • Daisuke Kan
  • ,
  • Takuya Shinnizu
  • ,
  • Yasuhiro Yamada
  • ,
  • Ryotaro Aso
  • ,
  • Hiroki Kurata
  • ,
  • Yoshihiko Kanernitsu
  • ,
  • Yuichi Shimakawa

7
1
記述言語
英語
掲載種別
研究論文(学術雑誌)
DOI
10.7567/APEX.7.015503
出版者・発行元
IOP PUBLISHING LTD

In this paper, we describe the use of band-to-band photoluminescence (PL) as a tool for evaluating the quality of Nb-doped STO (Nb: 0.1 at. %) epitaxial thin films. We found that the films with the bulk-equivalent lattice parameters show a large variation in their band-to-band PL properties. In combination with the transport property characterizations; we-ascribe the variation to the change in the carrier density owing to the carrier compensation by a small amount of point defects, which cannot be detected in structural characterizations. We also show that the band gap-Orth-e film is 10 meV smaller than that of the single crystal. Our results imply that even a small amount of defects has strong influences on the physical properties of the Nb-doped STO thin films and that the band-to-band PL is useful for elucidating these influences. (C) 2014 The Japan Society of Applied Physics

リンク情報
DOI
https://doi.org/10.7567/APEX.7.015503
Web of Science
https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000331011200019&DestApp=WOS_CPL
URL
http://orcid.org/0000-0003-1019-2512
ID情報
  • DOI : 10.7567/APEX.7.015503
  • ISSN : 1882-0778
  • eISSN : 1882-0786
  • ORCIDのPut Code : 34692266
  • Web of Science ID : WOS:000331011200019
  • ORCIDで取得されたその他外部ID : a:1:{i:0;a:1:{s:8:"other-id";s:19:"WOS:000331011200019";}}

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