2014年1月
Band-to-band photoluminescence as a probe of electron carriers in Nb-doped SrTiO3 epitaxial thin films
APPLIED PHYSICS EXPRESS
- ,
- ,
- ,
- ,
- ,
- ,
- 巻
- 7
- 号
- 1
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.7567/APEX.7.015503
- 出版者・発行元
- IOP PUBLISHING LTD
In this paper, we describe the use of band-to-band photoluminescence (PL) as a tool for evaluating the quality of Nb-doped STO (Nb: 0.1 at. %) epitaxial thin films. We found that the films with the bulk-equivalent lattice parameters show a large variation in their band-to-band PL properties. In combination with the transport property characterizations; we-ascribe the variation to the change in the carrier density owing to the carrier compensation by a small amount of point defects, which cannot be detected in structural characterizations. We also show that the band gap-Orth-e film is 10 meV smaller than that of the single crystal. Our results imply that even a small amount of defects has strong influences on the physical properties of the Nb-doped STO thin films and that the band-to-band PL is useful for elucidating these influences. (C) 2014 The Japan Society of Applied Physics
- リンク情報
- ID情報
-
- DOI : 10.7567/APEX.7.015503
- ISSN : 1882-0778
- eISSN : 1882-0786
- ORCIDのPut Code : 34692266
- Web of Science ID : WOS:000331011200019
- ORCIDで取得されたその他外部ID : a:1:{i:0;a:1:{s:8:"other-id";s:19:"WOS:000331011200019";}}