2005年8月
Fabrication and I-V characteristics of p-n junctions composed of high-T-c superconductors and La-doped SrTiO3
THIN SOLID FILMS
- ,
- ,
- ,
- 巻
- 486
- 号
- 1-2
- 開始ページ
- 71
- 終了ページ
- 74
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.1016/j.tsf.2004.11.218
- 出版者・発行元
- ELSEVIER SCIENCE SA
We have fabricated heterojunction structures comprising p-type high-T-c superconductor (YBCO) and n-type La-doped SrTiO3 (La-STO). (001) and (110) oriented-YBCO thin films were prepared on the (001) and (110)-oriented La-STO substrates, respectively, with the pulsed laser deposition technique. X-ray diffraction measurements confirm that the (00 1) and (I 10) YBCO thin films are epitaxially grown on the substrates. The fabricated junctions with both orientations show rectifying I-V characteristic, but their behavior are rather different depending on the orientation. The threshold voltages in the forward bias region increase with decreasing temperature. (c) 2004 Published by Elsevier B.V.
- リンク情報
- ID情報
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- DOI : 10.1016/j.tsf.2004.11.218
- ISSN : 0040-6090
- J-Global ID : 200902214156927165
- Web of Science ID : WOS:000230879200017