2009年
High Field ESR of P-doped Si for Quantum Computing Application
25TH INTERNATIONAL CONFERENCE ON LOW TEMPERATURE PHYSICS (LT25), PART 2
- 巻
- 150
- 号
- 開始ページ
- 22078
- 終了ページ
- 記述言語
- 英語
- 掲載種別
- 研究論文(国際会議プロシーディングス)
- DOI
- 10.1088/1742-6596/150/2/022078
- 出版者・発行元
- IOP PUBLISHING LTD
We measured ESR of phosphorous-doped silicon with a low concentration of P, n, at high magnetic fields and low temperatures to investigate the states of nuclear spin. A sample with n = 6.52x10(16)/cm(3) was studied at 2.85 T (80 GHz)from 30 K to 2. 3 K by field modulating cw-ESR for a fixed 0 dB power. As the temperature was lowered, the out-of-phase signal appeared around 18 K, reached at a maximum intensity at 13 K, and disappeared around 6 K. The out-of-phase signal is referred to the field modulation. The in-phase signal started to change from the derivative of absorption spectrum at high temperatures to absorption-like shape around 15 K and asymmetry of intensity for two peaks of hyperfine-separated signals increased as temperatures was lowered. Below 10 K, the saturation of the in-phase signal started to appear. We speculate that the asymmetry is caused by saturation effect and dynamic nuclear polarization of 31 P nuclear spin due to drastic change of electron T-1.
- リンク情報
- ID情報
-
- DOI : 10.1088/1742-6596/150/2/022078
- ISSN : 1742-6588
- Web of Science ID : WOS:000277052700079