論文

査読有り
2009年

High Field ESR of P-doped Si for Quantum Computing Application

25TH INTERNATIONAL CONFERENCE ON LOW TEMPERATURE PHYSICS (LT25), PART 2
  • M. Song
  • M. Jeong
  • T. Ueno
  • B. Kang
  • K. Sugiyama
  • K. Tanaka
  • A. Matsubara
  • S. Lee
  • S. Mitsudo
  • T. Mizusaki
  • M. Chiba
  • 全て表示

150
開始ページ
22078
終了ページ
記述言語
英語
掲載種別
研究論文(国際会議プロシーディングス)
DOI
10.1088/1742-6596/150/2/022078
出版者・発行元
IOP PUBLISHING LTD

We measured ESR of phosphorous-doped silicon with a low concentration of P, n, at high magnetic fields and low temperatures to investigate the states of nuclear spin. A sample with n = 6.52x10(16)/cm(3) was studied at 2.85 T (80 GHz)from 30 K to 2. 3 K by field modulating cw-ESR for a fixed 0 dB power. As the temperature was lowered, the out-of-phase signal appeared around 18 K, reached at a maximum intensity at 13 K, and disappeared around 6 K. The out-of-phase signal is referred to the field modulation. The in-phase signal started to change from the derivative of absorption spectrum at high temperatures to absorption-like shape around 15 K and asymmetry of intensity for two peaks of hyperfine-separated signals increased as temperatures was lowered. Below 10 K, the saturation of the in-phase signal started to appear. We speculate that the asymmetry is caused by saturation effect and dynamic nuclear polarization of 31 P nuclear spin due to drastic change of electron T-1.

リンク情報
DOI
https://doi.org/10.1088/1742-6596/150/2/022078
Web of Science
https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000277052700079&DestApp=WOS_CPL
ID情報
  • DOI : 10.1088/1742-6596/150/2/022078
  • ISSN : 1742-6588
  • Web of Science ID : WOS:000277052700079

エクスポート
BibTeX RIS