2016年12月
Enhanced efficiency of ultrathin (~500 nm)-film microcrystalline silicon photonic crystal solar cells
Applied Physics Express
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- 巻
- 10
- 号
- 1
- 開始ページ
- 12302
- 終了ページ
- 12302
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.7567/APEX.10.012302
- 出版者・発行元
- Institute of Physics
Enhancing the absorption of thin-film microcrystalline silicon solar cells at 600–1000 nm wavelengths is very important to the improvement of the energy conversion efficiency. This can be achieved by creating a large number of resonant modes utilizing two-dimensional photonic crystal band edges, which exceeds the Lambertian limit of absorption in random textures. We focus on suppressing the parasitic absorption of back-reflector metal and doped layers in photonic crystal microcrystalline silicon solar cells. We achieve a high active-area current density of 22.6 mA cm−2for an ultrathin (∼500 nm)-film silicon layer and obtain an active-area efficiency of ∼9.1%, as independently confirmed by the CSMT of AIST.
- リンク情報
- ID情報
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- DOI : 10.7567/APEX.10.012302
- ISSN : 1882-0778
- CiNii Articles ID : 150000113429