2014年
Preparation of Low-Resistivity Ga-Doped ZnO Epitaxial Films from Aqueous Solution Using Flow Reactor
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
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- 巻
- 161
- 号
- 14
- 開始ページ
- D725
- 終了ページ
- D729
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.1149/2.0321414jes
- 出版者・発行元
- ELECTROCHEMICAL SOC INC
An aqueous process based on a unique flow-reactor design was developed for the preparation of gallium-doped ZnO (ZnO:Ga) epitaxial films with a low electrical resistivity. In this process, a ZnO: Ga film was grown on a ZnO-seeded sapphire substrate heated at 80 degrees C under a constant flow of a reaction solution. The Ga content of the resulting films was found to increase in relation to the concentration of GaCl3 used-0 to 9 mM GaCl3-resulting in epitaxial growth of ZnO containing 0-5% Ga, whereas a polycrystalline ZnO film was produced with 10 mM GaCl3. The electrical resistivity of the as-grown ZnO: Ga films varied from 0.2 to 2 Omega cm, but was reduced by two to three orders of magnitude after the films were annealed in air at 300 degrees C. Thus, the lowest resistivity of 7 x 10(-4) Omega cm was obtained with an annealed film containing 2.5% Ga, whose carrier concentration and mobility were 7 x 10(20) cm(-3) and 13 cm(2) V-1 s(-1), respectively. Furthermore, even though the non-doped ZnO film was rendered translucent by annealing, ZnO: Ga films with 1.8-4.0% Ga still exhibited transmittance as high as similar to 80% in the visible spectrum. (C) The Author(s) 2014. Published by ECS. This is an open access article distributed under the terms of the Creative Commons Attribution Non-Commercial No Derivatives 4.0 License (CC BY-NC-ND, http://creativecommons.org/licenses/by-nc-nd/4.0/), which permits non-commercial reuse, distribution, and reproduction in any medium, provided the original work is not changed in any way and is properly cited. For permission for commercial reuse, please email: oa@electrochem.org. All rights reserved.
- リンク情報
- ID情報
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- DOI : 10.1149/2.0321414jes
- ISSN : 0013-4651
- eISSN : 1945-7111
- Web of Science ID : WOS:000345975500061