2019年4月
Hole mobility improvement in Cu2O thin films prepared by the mist CVD method
Applied Physics Express
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- 巻
- 12
- 号
- 5
- 開始ページ
- 055509
- 終了ページ
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.7567/1882-0786/ab15b3
- 出版者・発行元
- IOP PUBLISHING LTD
A high-mobility Cu2O thin film was fabricated using the mist chemical vapor deposition (CVD) method. This was achieved by suppressing the contamination from nitrogen impurities and optimum growth conditions to obtain single-phase Cu2O without CuO. A 600 nm Cu2O thin film was obtained using ethylenediaminetetraacetic acid as a complexing agent in dry-air growth atmosphere for 120 min. The resulting thin film had a resistivity of 2.8 x 10(2) Omega.cm, carrier concentration of 1.2 x 10(15) cm(-3) and hole mobility of 19.3 cm(2).V-1.s(-1). This hole mobility improved by two or more orders of magnitude compared to that of previous Cu2O thin film obtained by the mist CVD method. (C) 2019 The Japan Society of Applied Physics
- リンク情報
- ID情報
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- DOI : 10.7567/1882-0786/ab15b3
- ISSN : 1882-0778
- eISSN : 1882-0786
- Web of Science ID : WOS:000465996000001