2015年11月
Wide-Supply-Range All-Digital Leakage Variation Sensor for On-Chip Process and Temperature Monitoring
IEEE JOURNAL OF SOLID-STATE CIRCUITS
- ,
- ,
- ,
- 巻
- 50
- 号
- 11
- 開始ページ
- 2475
- 終了ページ
- 2490
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.1109/JSSC.2015.2461598
- 出版者・発行元
- IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Variation in process, voltage and temperature is a major obstacle in achieving energy-efficient operation of LSI. This paper proposes an all-digital on-chip circuit to monitor leakage current variations of both of the nMOSFET and pMOSFET independently. As leakage current is highly sensitive to threshold voltage and temperature, the circuit is suitable for tracking process and temperature variation. The circuit uses reconfigurable inhomogeneity to obtain statistical properties from a single monitor instance. A compact reconfigurable inverter topology is proposed to implement the monitor circuit. The compact and digital nature of the inverter enables cell-based design, which will reduce design costs. Measurement results from a 65 nm test chip show the validity of the proposed circuit. For a 124 sample size for both of the nMOSFET and pMOSFET, the monitor area is 4500 mu m(2) and active power consumption is 76 nW at 0.8 V operation. The proposed technique enables area-efficient and low-cost implementation thus can be used in product chips for applications such as dynamic energy and thermal management, testing and post-silicon tuning.
- リンク情報
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- DOI
- https://doi.org/10.1109/JSSC.2015.2461598
- DBLP
- https://dblp.uni-trier.de/rec/journals/jssc/MahfuzulSIO15
- Web of Science
- https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000364458200002&DestApp=WOS_CPL
- URL
- https://dblp.uni-trier.de/db/journals/jssc/jssc50.html#MahfuzulSIO15
- ID情報
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- DOI : 10.1109/JSSC.2015.2461598
- ISSN : 0018-9200
- eISSN : 1558-173X
- DBLP ID : journals/jssc/MahfuzulSIO15
- Web of Science ID : WOS:000364458200002