2012年9月
High Spin Torque Efficiency of Magnetic Tunnel Junctions with MgO/CoFeB/MgO Free Layer
APPLIED PHYSICS EXPRESS
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- 巻
- 5
- 号
- 9
- 開始ページ
- 1
- 終了ページ
- 93008
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.1143/APEX.5.093008
- 出版者・発行元
- JAPAN SOC APPLIED PHYSICS
We present the results of a perpendicular magnetic tunnel junction (MTJ) that displays simultaneously low critical switching current and voltage, as well as high thermal stability factor. These results were achieved using a free layer of the MgO/CoFeB/MgO structure by increasing the spin torque efficiency to an average of 3.0 k(B) T/mu A for 37-nm-diameter junctions, about three times that of a MgO/CoFeB/Ta free layer, which makes it the highest value reported to date. By comparing two films with different RA, hence different switching voltage and power, we explore the contributions of heating and voltage-modulated anisotropy change to the switching properties. (C) 2012 The Japan Society of Applied Physics
- リンク情報
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- DOI
- https://doi.org/10.1143/APEX.5.093008
- J-GLOBAL
- https://jglobal.jst.go.jp/detail?JGLOBAL_ID=201202271469450326
- CiNii Articles
- http://ci.nii.ac.jp/naid/150000105835
- Web of Science
- https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000308694100028&DestApp=WOS_CPL
- URL
- http://orcid.org/0000-0001-7071-0823
- ID情報
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- DOI : 10.1143/APEX.5.093008
- ISSN : 1882-0778
- J-Global ID : 201202271469450326
- CiNii Articles ID : 150000105835
- ORCIDのPut Code : 44610359
- Web of Science ID : WOS:000308694100028