2010年
Voltage-induced perpendicular magnetic anisotropy change in magnetic tunnel junctions
Applied Physics Letters
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- 巻
- 96
- 号
- 2
- 開始ページ
- 022506
- 終了ページ
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.1063/1.3279157
A voltage-induced perpendicular magnetic anisotropy change in an ultrathin FeCo layer was observed in an epitaxial magnetic tunnel junction (MTJ) structure. A spin-transfer induced ferromagnetic resonance measurement technique was used under various bias voltage applications to evaluate the anisotropy change. From the peak frequency shifts, we could estimate that a surface magnetic anisotropy change of 15 μJ/ m2 was induced by an electric field application of 400 mV/nm in the MTJ with a 0.5 nm thick FeCo layer. The realization of voltage-induced anisotropy changes in an MTJ structure should have a large impact on the development of electric-field driven spintronic devices. © 2010 American Institute of Physics.
- リンク情報
- ID情報
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- DOI : 10.1063/1.3279157
- ISSN : 0003-6951
- SCOPUS ID : 74549119453