MORARU DANIEL

Profile Information

Affiliation: Associate Professor, Faculty of Engineering - Department of Electronics and Materials Science, Shizuoka University

Degree: Doctor of Engineering(Sep, 2007, Shizuoka University)
MSc (Master)(Sep, 2003, Al. I. Cuza University, Iasi, Romania)
BSc (Bachelor of Science)(Sep, 2001, Al. I. Cuza University, Iasi, Romania)
Master of Business Administration (MBA) (Hon.)(Sep, 2022, GLOBIS University)

J-GLOBAL ID: 201501098594993530
researchmap Member ID: 7000011545

Research Areas

Committee Memberships

Apr, 2022 - Present

応用物理学会代議員, 公益社団法人応用物理学会
Feb, 2022 - Jan, 2024

応用物理学会代議員 (Representative Commitee of the JSAP), 公益社団法人応用物理学会
Feb, 2020 - Jan, 2022

応用物理学会代議員 (Representative Commitee of the JSAP), 公益社団法人応用物理学会
Feb, 2020 - Jan, 2022

応用物理学会代議員, 公益社団法人応用物理学会

Awards

Sep, 2022

Sponsor's Prize for the best presentation by a young scientist (Nanomaterials), Deposition and manipulation of carbon nanotube bundles on a CMOS-compatible platform, 14th International Conference on Physics of Advanced Materials

R. S. Singh, K. Takagi, T. Aoki, J. Moon, Y. Neo, F. Iwata, H. Mimura, D. Moraru
Mar, 2021

Best Presentation Award, Study of single-electron tunneling transport through coupled-donnor molecule in low-doped SOI-FETs towards elevated temperature, International Symposium toward the Future of Advanced Researches in Shizuoka University

Ananta Debnath, T. T. Jupalli, C. Pandy, D. Moraru
Mar, 2020

11th JSAP Silicon Technology Division Paper Award, Electron aspirator using electron-electron scattering in nanoscale silicon, Silicon Technology Division, The Japan Society of Applied Physics

Himma Firdaus, Tokinobu Watanabe, Masahiro Hori, Daniel Moraru, Yasuo Takahashi, Akira Fujiwara, Yukinori Ono
Oct, 2017

高柳研究奨励賞

Moraru Daniel
Jan, 2015

Poster Award in “Toward the Future of Advanced Researches in Shizuoka University” Symposium, Atomic and molecular behavior in tunneling transport via dopants in nano-transistors

D. Moraru, A. Samanta, Y. Takasu, T. Mizuno, M. Tabe
Mar, 2014

5th JSAP Silicon Technology Division Paper Award, Electron tunneling operation of single-donor-atom transistors at elevated temperatures, JSAP Silicon Technology Division

E. Hamid, D. Moraru, Y. Kuzuya, T. Mizuno, L. T. Anh, H. Mizuta, M. Tabe
Sep, 2012

1st Young Scientist Gold Award in International Union of Materials Research Societies – International Conference on Electronic Materials (IUMRS-ICEM) 2012, Experimental and ab initio study of donor state deepening in nanoscale SOI-MOSFETs

D. Moraru, E. Hamid, Y. Kuzuya, T. Mizuno, H. Mizuta, M. Tabe
Sep, 2012

1st Young Scientist Gold Award in International Union of Materials Research Societies ? International Conference on Electronic Materials (IUMRS-ICEM) 2012
Sep, 2006

Young Researcher Award in JSAP 67th Autumn National Meeting, The Japan Society of Applied Physics
Sep, 2005

Young Researcher Award in International Conference on Solid State Devices and Materials (SSDM) 2005, The Japan Society of Applied Physics

Papers

Four-polarisation camera for anisotropy mapping at three orientations: micro-grain of olivine

S. Kamegaki, D. Smith, M. Ryu, S. H. Ng, H. Huang, P. Maasoumi, J. Vongsvivu, D. Moraru, T. Katkus, S. Juodkazis …

Coatings, (9) 1640_1-1640_12, Sep, 2023 Peer-reviewed
Single-charge tunneling in codoped silicon nanodevices

D. Moraru, T. Kaneko, Y. Tamura, T. T. Jupalli, R. S. Singh, C. Pandy, L. Popa, F. Iacomi

Nanomaterials, (13) 1911_1-1911_15, Jun, 2023 Peer-reviewed
Structure and optical anisotropy of spider scales and silk: use of chromaticity and azimuth colors

D. Linklater, A. Vailionis, M. Ryu, S. Kamegaki, J. Morikawa, H. Mu, D. Smith, P. Maasoumi, R. Ford, T. Katkus …

Nanomaterials, (12) 1894_1-1894_23, Jun, 2023 Peer-reviewed
Crystalline Flat Surface Recovered by High Temperature Annealing after Laser Ablation

Daniel Smith, Soon Hock Ng, Tomas Katkus, Amanda Tang, Daniel Moraru, Saulius Juodkazis

Photonics, (5) 594_1-11, May, 2023 Peer-reviewed
Polarisation Control in Arrays of Microlenses and Gratings: Performance in Visible-IR Spectral Ranges

H. Mu, D. Smith, T. Katkus, D. Gailevičius, M. Malinauskas, Y. Nishijima, P. R. Stoddar, D. Ruan, M. Ryu, J. Morikawa …

Micromachines, 14(4) 798, Mar, 2023 Peer-reviewed
Inelastic cotunneling in the Coulomb-blockade transport of donor-atom transistors

P. Yadav, S. Chakraborty, D. Moraru, A. Samanta

Journal of Vacuum Science and Technology B, 41(1) 012208, Jan, 2023 Peer-reviewed
Variable-Barrier Quantum Coulomb Blockade Effect in Nanoscale Transistors

P. Yadav, S. Chakraborty, D. Moraru, A. Samanta

Nanomaterials, 12(24) 4437, Dec, 2022 Peer-reviewed
Precise Deposition of Carbon Nanotube Bundles by Inkjet-Printing on a CMOS-Compatible Platform

R. S. Singh, K. Takagi, T. Aoki, J.-H. Moon, Y. Neo, F. Iwata, H. Mimura, D. Moraru

Materials, 15(14) 4935, Jul, 2022 Peer-reviewed
Deposition and characterization of low-density carbon nanotube networks on CMOS-compatible platform

Rohitkumar S. Singh, K. Takagi, T. Aoki, J. Moon, Y. Neo, F. Iwata, H. Mimura, D. Moraru

2022 IEEE Silicon Nanoelectronics Workshop (SNW), Jun 11, 2022
Room-temperature single-electron tunneling in highly-doped silicon-on-insulator nanoscale field-effect transistors

T. Teja Jupalli, A. Debnath, G. Prabhudesai, K. Yamaguchi, P. Jeevan Kumar, Y. Ono, D. Moraru

Applied Physics Express, 15(6) 065003_1-4, May, 2022 Peer-reviewed
Probing ionization characteristics of under-water plasma arc discharge using simultaneous current and voltage versus time measurement in carbon nanoparticle synthesis

Miftahul Anwar, Teguh E. Saraswati, Lia Anjarwati, Daniel Moraru, Arief Udhiarto, Feri Adriyanto, Hari Maghfiroh, Ratno Nuryadi

Micro and Nano Engineering, 14 100099_1-100099_7, Dec, 2021 Peer-reviewed
Electron transport via a few-dopant cluster in the presence of counter-dopants in silicon nanowire transistors

Chitra Pandy, Gaurang Prabhudesai, Kensuke Yamaguchi, V N Ramakrishnan, Yoichiro Neo, Hidenori Mimura, Daniel Moraru

Applied Physics Express, 14(5) 055002_1-055002_6, Apr 16, 2021 Peer-reviewedCorresponding author
Band-to-band tunneling mechanism observed at room temperature in lateral non-degenerately doped nanoscale p-n and p-i-n silicon devices

Arief Udhiarto, Ratno Nuryadi, Miftahul Anwar, Gaurang Prabhudesai, Daniel Moraru

Japanese Journal of Applied Physics, 60(2) 024001_1-024001_7, Jan 21, 2021 Peer-reviewedLast author
Coulomb-blockade transport in selectively-doped Si nano-transistors

A.Afiff, A. Samanta, A. Udhiarto, H. Sudibyo, M. Hori, Y. Ono, M. Tabe, D.Moraru

Applied Physics Express, 12(8) 085004_1-085004_5, Jul, 2019 Peer-reviewedCorresponding author
Single-charge band-to-band tunneling via multiple-dopant clusters in nanoscale Si Esaki diodes

Gaurang Prabhudesai, Manoharan Muruganathan, Le The Anh, Hiroshi Mizuta, Masahiro Hori, Yukinori Ono, Michiharu Tabe, Daniel Moraru

Applied Physics Letters, 114(24) 243502_1-243502_5, Jun 17, 2019 Peer-reviewedCorresponding author
Electron aspirator using electron-electron scattering in nanoscale silicon

H.Firdaus, T.Watanabe, M.Hori, D.Moraru, Y.Takahashi, A. Fujiwara, Y.Ono

Nature Communications, 9 4813_1-8, Dec, 2018 Peer-reviewed
Phosphorous doped p -type MoS2 polycrystalline thin films via direct sulfurization of Mo film

Tomohiro Momose, Atsushi Nakamura, Moraru Daniel, Masaru Shimomura

AIP Advances, 8(2) 025009_1-8, Feb 1, 2018 Peer-reviewed
Inter-band tunneling mechanisms via dopant-induced energy states in low-dimensional si tunnel diodes

G. Prabhudesai, G. Greeshma, M. Shibuya, M. Manoharan, H. Mizuta, M. Tabe, D. Moraru

2017 Silicon Nanoelectronics Workshop, SNW 2017, 2017-January 27-28, Dec 29, 2017
Single-electron quantization at room temperature in a-few-donor quantum dot in silicon nano-transistors

Arup Samanta, Manoharan Muruganathan, Masahiro Hori, Yukinori Ono, Hiroshi Mizuta, Michiharu Tabe, Daniel Moraru

APPLIED PHYSICS LETTERS, 110(9) 093107_1-5, Feb, 2017 Peer-reviewedLast author
Toward Room Temperature Operation of Dopant Atom Transistors

Michiharu Tabe, Arup Samanta, Daniel Moraru

RECENT GLOBAL RESEARCH AND EDUCATION: TECHNOLOGICAL CHALLENGES, 519((num)) 83-88, 2017 Peer-reviewed

Misc.

Detection of single holes generated by impact ionization in silicon

H.Firdaus, T. Watanabe, M.Hori, D.Moraru, Y.Takahashi, A.Fujiwara, Y.Ono

Applied Physics Letters, 113(16), Nov 1, 2018
Electron-tunneling operation of single-dopant-atom transistors at elevated temperature : Toward room temperature operation

MORARU Daniel, HAMID Earfan, SAMANTA Arup, ANH Le The, MIZUNO Takeshi, MIZUTA Hiroshi, TABE Michiharu

IEICE technical report. Electron devices, 113(39) 65-70, May 16, 2013
Individual Dopant Nature in Si Lateral Nano-pn Junctions

PURWIYANTI Sri, UDHIARTO Arief, NOWAK Roland, MORARU Daniel, MIZUNO Takeshi, HARTANTO Djoko, JABLONSKI Ryszard, TABE Michiharu

IEICE technical report. Electron devices, 112(445) 25-30, Feb 27, 2013
KFM observation of individual dopant potentials and electron charging

NOWAK Roland, ANWAR Miftahul, MORARU Daniel, MIZUNO Takeshi, JABLONSKI Ryszard, TABE Michiharu

Technical report of IEICE. SDM, 111(426) 13-18, Feb 7, 2012
Ab initio Analysis of Electronic States for Single Phosphorous Dopants in Silicon Nanoscale Transistors

KUZUYA Yohei, MORARU Daniel, MIZUNO Takeshi, TABE Michiharu, MIZUTA Hiroshi

111(426) 7-11, Jan 31, 2012
Single-Electron Charging in Phosphorus Donors in Silicon Observed by Low-Temperature Kelvin Probe Force Microscope

Miftahul Anwar, Yuya Kawai, Daniel Moraru, Roland Nowak, Ryszard Jablonski, Takeshi Mizuno, Michiharu Tabe

JAPANESE JOURNAL OF APPLIED PHYSICS, 50(8) 08LB10-1, Aug, 2011
Single-Electron Transfer between Two Donors in Thin Nanoscale Silicon Transistors

MORARU Daniel, HAMID Earfan, TARIDO Juli Cha, MIKI Sakito, NAKAMURA Ryusuke, MIZUNO Takeshi, TABE Michiharu

IEICE technical report, 110(423) 57-62, Feb 16, 2011
Current Intermittency in SOI-FETs under Light Illumination

UDHIARTO Arief, MORARU Daniel, NAKAMURA Ryusuke, MIZUNO Takeshi, TABE Michiharu

IEICE technical report, 110(423) 67-72, Feb 16, 2011
Si single-dopant devices and their characterization

TABE Michiharu, MORARU Daniel, HAMID Earfan, ANWAR Miftahul, UDHIARTO Arief, NAKAMURA Ryusuke, MIKI Sakito, MIZUNO Takeshi

IEICE technical report, 110(109) 131-136, Jun 23, 2010
Charging phenomena of a single electron in P-doped Si SOI-MOSFETs

HAMID Earfan, TARIDO Juli Cha, MIKI Sakito, MORARU Daniel, MIZUNO Takeshi, TABE Michiharu

IEICE technical report, 110(30) 23-26, May 6, 2010
Single Photon Detection in Single Dot and Multi Dots Channel Phosphorus-Doped SOI-FET

UDHIARTO Arief, MORARU Daniel, NAKAMURA Ryusuke, MIKI Sakito, MIZUNO Takeshi, TABE Michiharu

IEICE technical report, 110(30) 27-31, May 6, 2010
Observation of individual dopants in a thin silicon layer by low temperature Kelvin Probe Force Microscope

Maciej Ligowski, Daniel Moraru, Miftahul Anwar, Takeshi Mizuno, Ryszard Jablonski, Michiharu Tabe

APPLIED PHYSICS LETTERS, 93(14) 142101, Oct, 2008
Design of dopant-induced quantum dot arrays in silicon nanostructures for single-electron transfer

MORARU Daniel, NAGATA Daisuke, YOKOI Kiyohito, IKEDA Hiroya, TABE Michiharu

IEICE technical report, 107(474) 17-22, Jan 23, 2008
Design Control of Random Dopant-induced Multiple-Tunnel-Junction Arrays for Turnstile Operation

MORARU D., YOKOI K., IKEDA H., TABE M.

Ext. Abstr. of 2007 Intl. Conf. on Solid State Devices and Materials, 2007 1138-1139, Sep 19, 2007
Single-electron-tunneling characteristics of SOI-MOSFETs with ultra thin Si layer doped Phosphorus

NAGATA Daisuke, EBISAWA Kazuhito, MORARU Daniel, TABE Michiharu

IEICE technical report, 107(54) 83-86, May 17, 2007
Time-controlled single-electron transfer in single-gated asymmetric multiple tunnel junction arrays

MORARU Daniel, ONO Yukinori, INOKAWA Hiroshi, YOKOI Kiyohito, NURYADI Ratno, IKEDA Hiroya, TABE Michiharu

IEICE technical report, 106(520) 83-88, Jan 25, 2007
Observation of single-electron pump operation with one ac gate bias in phosphorous-doped Si wires

MORARU D., ONO Y., INOKAWA H., YOKOI K., NURYADI R., IKEDA H., TABE M.

2006 820-821, Sep 13, 2006
Tunneling current oscillations in Si/SiO_2/Si structures

MORARU Daniel, NAGATA Daisuki, HORIGUCHI Seiji, NURYADI Ratno, IKEDA Hiroya, TABE Michiharu

IEICE technical report, 106(47) 113-117, May 11, 2006

Books and Other Publications

Nanoscale Silicon Devices

D. Moraru, M. Tabe (Role: Joint author)

Taylor & Francis Group, Dec, 2015
Toward quantum FinFET

D. Moraru, M. Tabe (Role: Joint author)

Springer, Dec, 2014
Single Atom Nanoelectronics

M. Tabe, A. Udhiarto, D. Moraru (Role: Joint author)

Pan Stanford Publishing, Apr, 2013
Developing Nanosilicon Technology and Device Applications

M. Tabe, D. Moraru (Role: Joint author)

CMC Publishing Co., Jun, 2010

Presentations

332

Challenges and Progress in the Fabrication of Silicon Nanowire Tunnel Diodes

D. Moraru

5th International Conference on Nano Electronics Research and Education (ICNERE), Jul 31, 2023 Invited
Modification and ablation of thin silicon-on-insulator films by fs-laser

D. Moraru, T. Kaneko, D. Smith, T. Katkus, S. H. Ng, S. Juodkazis

IEEE Silicon Nanoelectronics Workshop, Jun 11, 2023
Inkjet-printed carbon nanotubes on silicon nano-gaps: an analysis of electrical characteristics

Rohit S. Singh, H. Kawanishi, T. Kaneko, K. Takagi, T. Aoki, Y. Neo, H. Mimura, M. Shimomura, D. Moraru

7th International Conference on Nanoscience and Nanotechnology (ICONN 2023), Mar 28, 2023
Single-electron tunneling through dopants in thin-Si devices

D. Moraru

MCN Nanofabulous Seminar, Mar 2, 2023
Design and Optimization of Vertical GaN based Power MOSFETs for Converter Applications

Ramakrishnan V N, Reena D, Nilesh Kumar, Nithish Kumar V, D Moraru

The 24th Takayanagi Kenjiro Memorial Symposium, Nov 29, 2022
Study of current paths through carbon nanotube bundles deposited by inkjet printing

R. S. Singh, K. Takagi, T. Aoki, J. Moon, Y. Neo, H. Mimura, D. Moraru

The 24th Takayanagi Kenjiro Memorial Symposium, Nov 29, 2022
Fabrication of carbon nanotube transistor by inkjet printing

R. S. Singh, K. Takagi, T. Aoki, J. Moon, Y. Neo, H. Mimura, D. Moraru

The 7th International Symposium on Biomedical Engineering (ISBE2022), Nov 25, 2022
Analog/RF performance analysis of GaSb-InP vertical Tunnel Field Effect Transistors

Ramakrishnan V N, Ramkumar K, D. Moraru

13th Annual ISAJ Symposium2022, Nov 18, 2022
共ドープSiナノトランジスタの単一電子トンネリングに対するバックゲート電圧の影響

金子義, ジュパリ・タルナ・テジャ, モラル・ダニエル

第83回応用物理学会秋季学術講演会, Sep 22, 2022
Siナノエサキダイオードの空乏層におけるエネルギー準位を介したトンネル電流の研究

田村悠太, モラル・ダニエル

第83回応用物理学会秋季学術講演会, Sep 22, 2022
Single-charge tunneling functionalities in co-doped silicon nanostructures for dopant-based electronics

D. Moraru

14th International Conference on Physics of Advanced Materials (ICPAM-14), Sep 11, 2022 Invited
Deposition and manipulation of carbon nanotube bundles on a CMOS-compatible platform

R. S. Singh, K. Takagi, T. Aoki, J. Moon, Y. Neo, F. Iwata, H. Mimura, D. Moraru

14th International Conference on Physics of Advanced Materials (ICPAM-14), Sep, 2022
Fabrication and characterization of inkjet-printed carbon nanotube-based transistor

Rohitkumar S. Singh, K. Takagi, T. Aoki, J. Moon, Y. Neo, H. Mimura, D. Moraru

14th International Conference on Physics of Advanced Materials (PAMS-5), Sep, 2022
Transport of electrons one by one through dopants in thin-Si devices

Daniel Moraru

The 29th International Conference on Amorphous and Nano-crystalline Semiconductors (ICANS29), Aug 25, 2022 Invited
Towards Practical Implementation of Single-Electron Tunneling via Donor-Induced Quantum Dots in Silicon Nanodevices

D. Moraru

Physics and Its Applications, Jul 21, 2022 Invited
Single-electron tunneling through multiple-donor QDs in high-concentration co-doped Si nanoscale transistors

T. T. Jupalli, T. Kaneko, C. Pandy, D. Moraru

シリコン材料・デバイス研究会（SDM）/電子デバイス研究会（ED）, May 27, 2022
Theoretical analysis on the effect of coupling between dopants and leads in Si nanodiodes for band-to-band tunneling enhancement

C. Pandy, K. Yamaguchi, Y. Neo, H. Mimura, D. Moraru

The 69th JSAP Spring Meeting 2022, Mar 23, 2022
Study of single-electron tunneling in Si nano-transistors in different doping concentration regimes for room-temperature operation

T. T. Jupalli, A. Debnath, Y. Ono, D. Moraru

The 69th JSAP Spring Meeting 2022, Mar 23, 2022
高濃度共ドープしたSiナノトランジスタの単一電子トンネリング評価

金子義, タルナ・テジャ・ジュパリ, 三浦舜平, 山口謙祐, モラル・ダニエル

The 69th JSAP Spring Meeting 2022, Mar 23, 2022
Inkjet printing of carbon nanotube array at low density for CMOS-compatible fabrication of nanoscale transistors

Rohitkumar S. Singh, K. Takagi, T. Aoki, J. Moon, Y. Neo, D. Moraru, H. Mimura

The 69th JSAP Spring Meeting 2022, Mar 22, 2022

Teaching Experience

Professional Memberships

Japan Society of Applied Physics

Research Projects

Research on band-to-band tunneling via discrete dopants near pn junctions in Si nanodevices

基盤研究(C), Apr, 2022 - Mar, 2025
Research on band-to-band tunneling via discrete dopants near pn junctions in Si nanodevices

基盤研究(C), Apr, 2022 - Mar, 2025
原子レベルのシリコンｐｎダイオードの研究

研究助成, 第39回（2023年度）公益財団法人村田学術振興財団 (Murata Science Foundation), Jun, 2023 - May, 2024
Siトンネルダイオードにおけるバンド間トンネリングの研究

融合研究促進費, 令和4年度超領域研究推進本部, Apr, 2022 - Mar, 2023
Development of high-speed electron-lattice energy-conversion method for future electronics

Grants-in-Aid for Scientific Research, Grant-in-Aid for Challenging Research (Pioneering), Japan Society for the Promotion of Science, Apr, 2020 - Mar, 2022

ONO YUKINORI
Study of two-dimensional Si Esaki diodes at ultra-high doping with semimetal behavior

Grants-in-Aid for Scientific Research Grant-in-Aid for Scientific Research (C), Grant-in-Aid for Scientific Research (C), Japan Society for the Promotion of Science, Apr, 2019 - Mar, 2022
Single phonon control by dopant atoms in silicon

Grants-in-Aid for Scientific Research, Grant-in-Aid for Scientific Research (A), Japan Society for the Promotion of Science, Apr, 2016 - Mar, 2020

ONO YUKINORI
Development of dopant atom devices based on silicon nanostructures

Grants-in-Aid for Scientific Research, Grant-in-Aid for Scientific Research (S), Japan Society for the Promotion of Science, Apr, 2011 - Mar, 2016

Tabe Michiharu, SHINADA Takahiro, ONO Yukinori, MIZUTA Hiroshi, MORARU Daniel, FUJIWARA Satoshi
Development of dopant atom devices based on silicon nanostructures

Grants-in-Aid for Scientific Research, Grant-in-Aid for Scientific Research (S), Japan Society for the Promotion of Science, Apr, 2011 - Mar, 2016

Tabe Michiharu, SHINADA Takahiro, ONO Yukinori, MIZUTA Hiroshi, MORARU Daniel, FUJIWARA Satoshi
Effect of energy filtering due to donor atoms near source edge in Si nano-transistors

Grants-in-Aid for Scientific Research, Grant-in-Aid for Young Scientists (B), Japan Society for the Promotion of Science, Apr, 2014 - Mar, 2016

Moraru Daniel

Profile Information

Research Areas

Committee Memberships

Awards

Papers

Misc.

Books and Other Publications

Presentations

Teaching Experience

Professional Memberships

Research Projects

Menu

Coauthors