篠原尋史 (Hirofumi Shinohara) - 論文

A 100-Bit-Output Modeling Attack-Resistant SPN Strong PUF with Uniform and High-Randomness Response

Kunyang Liu, Yichen Tang, Shufan Xu, Ruilin Zhang, Hirofumi Shinohara

2023 IEEE Custom Integrated Circuits Conference (CICC) 2023年4月

V_SS-Bias-Based Measurement of Random Telegraph Noise in Hybrid SRAM PUF after Hot Carrier Injection Burn-in

Kunyang Liu, Yichen Tang, Shufan Xu, Hirofumi Shinohara

2023 35th International Conference on Microelectronic Test Structure (ICMTS) 2023年3月27日

Effect of Quadruple Size Transistor on SRAM Physically Unclonable Function Stabilized by Hot Carrier Injection

Shufan Xu, Kunyang Liu, Yichen Tang, Ruilin Zhang, Hirofumi Shinohara

2023 35th International Conference on Microelectronic Test Structure (ICMTS) 2023年3月27日

A 2.17-pJ/b 5b-Response Attack-Resistant Strong PUF with Enhanced Statistical Performance

Kunyang Liu, Gen Li, Zihan Fu, Xuanzhen Wang, Hirofumi Shinohara

ESSCIRC 2022- IEEE 48th European Solid State Circuits Conference (ESSCIRC) 2022年9月19日

Statistical Modeling of SRAM PUF Cell Mismatch Shift Distribution After Hot Carrier Injection Burn-In

Kunyang Liu, Kiyoshi Takeuchi, Hirofumi Shinohara

2022 IEEE 34th International Conference on Microelectronic Test Structures (ICMTS) 2022年3月21日

A 0.186-pJ per Bit Latch-Based True Random Number Generator Featuring Mismatch Compensation and Random Noise Enhancement

Ruilin Zhang, Xingyu Wang, Kunyang Liu, Hirofumi Shinohara

IEEE JOURNAL OF SOLID-STATE CIRCUITS 2022年3月

A 0.116pJ/bit Latch-Based True Random Number Generator with Static Inverter Selection and Noise Enhancement

Xingyu Wang, Ruilin Zhang, Yuxin Wang, Kunyang Liu, Xuanzhen Wang, Hirofumi Shinohara

2022 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2022 - Proceedings 2022年

A 0.5-V Hybrid SRAM Physically Unclonable Function Using Hot Carrier Injection Burn-In for Stability Reinforcement

Kunyang Liu, Xinpeng Chen, Hongliang Pu, Hirofumi Shinohara

IEEE Journal of Solid-State Circuits 56(7) 2193-2204 2021年7月査読有り最終著者

Energy-Efficient Post-Processing Technique Having High Extraction Efficiency for True Random Number Generators

Ruilin Zhang, Xingyu Wang, Hirofumi Shinohara

IEICE TRANSACTIONS ON ELECTRONICS E104C(7) 300-308 2021年7月

A 0.186-pJ per Bit Latch-Based True Random Number Generator with Mismatch Compensation and Random Noise Enhancement

Ruilin Zhang, Xingyu Wang, Luying Wang, Xinpeng Chen, Fan Yang, Kunyang Liu, Hirofumi Shinohara

2021 Symposium on VLSI Circuits 2021年6月13日

36.3 A Modeling Attack Resilient Strong PUF with Feedback-SPN Structure Having <0.73% Bit Error Rate through In-Cell Hot-Carrier Injection Burn-In

Kunyang Liu, Zihan Fu, Gen Li, Hongliang Pu, Zhibo Guan, Xingyu Wang, Xinpeng Chen, Hirofumi Shinohara

Digest of Technical Papers - IEEE International Solid-State Circuits Conference 64 502-504 2021年2月13日

An Inverter-Based True Random Number Generator with 4-bit Von-Neumann Post-Processing Circuit

Xingyu Wang, Hongjie Liu, Ruilin Zhang, Kunyang Liu, Hirofumi Shinohara

Midwest Symposium on Circuits and Systems 2020-August 285-288 2020年8月

A 373-F-2 0.21%-Native-BER EE SRAM Physically Unclonable Function With 2-D Power-Gated Bit Cells and V-SS Bias-Based Dark-Bit Detection

Kunyang Liu, Yue Min, Xuan Yang, Hanfeng Sun, Hirofumi Shinohara

IEEE JOURNAL OF SOLID-STATE CIRCUITS 55(6) 1719-1732 2020年6月

A 0.5-V 2.07-fJ/b 497-F² EE/CMOS Hybrid SRAM Physically Unclonable Function with < 1E-7 Bit Error Rate Achieved through Hot Carrier Injection Burn-in

Kunyang Liu, Hongliang Pu, Hirofumi Shinohara

Proceedings of the Custom Integrated Circuits Conference 2020-March 2020年3月

A 0.5-V Hybrid SRAM Physically Unclonable Function Using Hot Carrier Injection Burn-In for Stability Reinforcement

Kunyang Liu, Xinpeng Chen, Hongliang Pu, Hirofumi Shinohara

IEEE Journal of Solid-State Circuits 56(7) 2193-2204 2020年

A 0.5-V 2.07-0/b 497-F-2 EE/CMOS Hybrid SRAM Physically Unclonable Function with < 1E-7 Bit Error Rate Achieved through Hot Carrier Injection Burn-in

Kunyang Liu, Hongliang Pu, Hirofumi Shinohara

2020 IEEE CUSTOM INTEGRATED CIRCUITS CONFERENCE (CICC) 2020年

A CMOS 0.85-V 15.8-nW current and voltage reference without resistors

Jing Wang, Hirofumi Shinohara

2019 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2019 2019年4月1日

A 373 F ² 2D Power-Gated EE SRAM Physically Unclonable Function with Dark-Bit Detection Technique

Kunyang Liu, Yue Min, Xuan Yang, Hanfeng Sun, Hirofumi Shinohara

2018 IEEE Asian Solid-State Circuits Conference, A-SSCC 2018 - Proceedings 161-164 2018年12月14日

High-throughput von Neumann post-processing for random number generator

Ruilin Zhang, Sijia Chen, Chao Wan, Hirofumi Shinohara

2018 International Symposium on VLSI Design, Automation and Test, VLSI-DAT 2018 1-4 2018年6月5日

Measurement of Static Random Access Memory Power-Up State Using an Addressable Cell Array Test Structure

Kiyoshi Takeuchi, Tomoko Mizutani, Hirofumi Shinohara, Takuya Saraya, Masaharu Kobayashi, Toshiro Hiramoto

IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING 30(3) 209-215 2017年8月

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