論文

2017年

Measurement of Mismatch Factor and Noise of SRAM PUF Using Small Bias Voltage

2017 INTERNATIONAL CONFERENCE OF MICROELECTRONIC TEST STRUCTURES (ICMTS)
  • Ziyang Cui
  • ,
  • Baikun Zheng
  • ,
  • Yanhao Piao
  • ,
  • Shiyu Liu
  • ,
  • Ronghao Xie
  • ,
  • Hirofumi Shinohara

記述言語
英語
掲載種別
研究論文(国際会議プロシーディングス)
DOI
10.1109/ICMTS.2017.7954264
出版者・発行元
IEEE

Mismatch factor of SRAM bit cell and noise factor that affects its power up state are measured using 256 bit SRAM PUF test structure with bias voltage inputs. Probability of power up state is used to extract a mismatch factor normalized by sigma n ( sigma noise voltage). By combining shifted bias voltages and repeat evaluation, whole 256 bit mismatch factors from real SRAM with small modification are obtained. According to the measurement data, it is confirmed that both noise factor and mismatch factor follow Gaussian distribution within a range of +/- 3.5 sigma and +/- 2.9 sigma respectively.

リンク情報
DOI
https://doi.org/10.1109/ICMTS.2017.7954264
Web of Science
https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000413082200010&DestApp=WOS_CPL
URL
https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85023173053&origin=inward
ID情報
  • DOI : 10.1109/ICMTS.2017.7954264
  • SCOPUS ID : 85023173053
  • Web of Science ID : WOS:000413082200010

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