2017年
Measurement of Mismatch Factor and Noise of SRAM PUF Using Small Bias Voltage
2017 INTERNATIONAL CONFERENCE OF MICROELECTRONIC TEST STRUCTURES (ICMTS)
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- 記述言語
- 英語
- 掲載種別
- 研究論文(国際会議プロシーディングス)
- DOI
- 10.1109/ICMTS.2017.7954264
- 出版者・発行元
- IEEE
Mismatch factor of SRAM bit cell and noise factor that affects its power up state are measured using 256 bit SRAM PUF test structure with bias voltage inputs. Probability of power up state is used to extract a mismatch factor normalized by sigma n ( sigma noise voltage). By combining shifted bias voltages and repeat evaluation, whole 256 bit mismatch factors from real SRAM with small modification are obtained. According to the measurement data, it is confirmed that both noise factor and mismatch factor follow Gaussian distribution within a range of +/- 3.5 sigma and +/- 2.9 sigma respectively.
- リンク情報
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- DOI
- https://doi.org/10.1109/ICMTS.2017.7954264
- Web of Science
- https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000413082200010&DestApp=WOS_CPL
- URL
- https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=85023173053&origin=inward
- ID情報
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- DOI : 10.1109/ICMTS.2017.7954264
- SCOPUS ID : 85023173053
- Web of Science ID : WOS:000413082200010