2012年10月
Transport Properties of Closely-Packed Carbon Nanotubes Film on SiC Tuned by Si-Doping
APPLIED PHYSICS EXPRESS
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- 巻
- 5
- 号
- 10
- 開始ページ
- 105102
- 終了ページ
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.1143/APEX.5.105102
- 出版者・発行元
- IOP PUBLISHING LTD
Here, we reveal origins of the planar electrical transport of closely-packed carbon nanotubes (CNTs) and silicon-doped CNTs (Si-CNTs) films. Their electrical resistivities increased with decreasing temperature, but exhibit a plateau below 60 K. This phenomenon can be well described using the simple-two-band model, which is often used to understand the electronic properties of graphite. Cryogenic energy-filtered transmission electron microscopy visualizes Si atoms dispersed finely in CNTs, preserving the structural features of CNTs. These Si atoms induced effective carriers above 150 K, while three-dimensional variable range hopping and weak localization are dominant in their transport below 50 and 10 K, respectively. (C) 2012 The Japan Society of Applied Physics
- リンク情報
- ID情報
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- DOI : 10.1143/APEX.5.105102
- ISSN : 1882-0778
- eISSN : 1882-0786
- Web of Science ID : WOS:000310866900027