2007
H atom relaxation in Si
12TH INTERNATIONAL CONFERENCE ON PHONON SCATTERING IN CONDENSED MATTER (PHONONS 2007)
- ,
- ,
- Volume
- 92
- Number
- Language
- English
- Publishing type
- Research paper (international conference proceedings)
- DOI
- 10.1088/1742-6596/92/1/012147
- Publisher
- IOP PUBLISHING LTD
It is believed that hydrogen in silicon is located at the bond center. But, the hydrogen atom is actually deviated significantly from the bond center dynamically, which is illustrated by the present calculations. The fast relaxation to bending causes a large decay rate of the H vibration.
- Link information
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- DOI
- https://doi.org/10.1088/1742-6596/92/1/012147
- Web of Science
- https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000265677100147&DestApp=WOS_CPL
- URL
- https://www.scopus.com/inward/record.uri?partnerID=HzOxMe3b&scp=58149500795&origin=inward
- ID information
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- DOI : 10.1088/1742-6596/92/1/012147
- ISSN : 1742-6588
- SCOPUS ID : 58149500795
- Web of Science ID : WOS:000265677100147