論文

査読有り 筆頭著者 責任著者
2020年6月

Epitaxial L10-FeNi films with high degree of order and large uniaxial magnetic anisotropy fabricated by denitriding FeNiN films

Applied Physics Letters
  • Keita Ito
  • Masahiro Hayashida
  • Hiroto Masuda
  • Takahiro Nishio
  • Sho Goto
  • Hiroaki Kura
  • Tomoyuki Koganezawa
  • Masaki Mizuguchi
  • Yusuke Shimada
  • Toyohiko J. Konno
  • Hideto Yanagihara
  • Koki Takanashi
  • 全て表示

116
24
開始ページ
242404-1
終了ページ
5
記述言語
英語
掲載種別
研究論文(学術雑誌)
DOI
10.1063/5.0011875
出版者・発行元
AMER INST PHYSICS

L1(0)-orderd FeNi alloy films with a high degree of order (S) and a large uniaxial magnetic anisotropy energy (K-u) were realized by denitriding FeNiN films. FeNiN films with the a-axis perpendicular to the film plane were epitaxially grown on SrTiO3 (001) substrates by molecular beam epitaxy by changing the growth temperatures (T-S) to 200, 250, and 350 degrees C. The a-axis oriented epitaxial L1(0)-FeNi films were fabricated by annealing the FeNiN films in a H-2 gas atmosphere at 300 degrees C. S and K-u of the denitrided L1(0)-FeNi films were characterized by anomalous x-ray diffraction using synchrotron radiation and magnetic torque measurements, respectively. A high S of 0.87 and a K-u of 5.9x10(5) J/m(3) were realized in the L1(0)-FeNi film with a T-S of 350 degrees C. This high S value exceeds the values reported on L1(0)-FeNi to date, but the K-u value was comparable to those of c-axis oriented L1(0)-FeNi films with S similar to 0.5 grown by alternate monoatomic deposition of Fe and Ni layers. A possible origin for the suppressed macroscopic K-u in a-axis oriented L1(0)-FeNi films is discussed, and denitriding FeNiN is a promising method for the fabrication of L1(0)-FeNi with a high S and a large K-u.

リンク情報
DOI
https://doi.org/10.1063/5.0011875
Web of Science
https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000542642700003&DestApp=WOS_CPL
URL
http://aip.scitation.org/doi/pdf/10.1063/5.0011875
ID情報
  • DOI : 10.1063/5.0011875
  • ISSN : 0003-6951
  • eISSN : 1077-3118
  • Web of Science ID : WOS:000542642700003

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