2020年9月
Exciton diffusion in hBN-encapsulated monolayer MoSe2
PHYSICAL REVIEW B
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- 巻
- 102
- 号
- 11
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.1103/PhysRevB.102.115424
- 出版者・発行元
- AMER PHYSICAL SOC
Excitons, quasiparticles composed of an electron and a hole, play an important role in optical responses in low-dimensional nanostructures. In this work, we have investigated exciton diffusion in monolayer MoSe2 encapsulated between flakes of hexagonal boron nitride (hBN/MoSe2/hBN). Through photoluminescence imaging and numerical solution of the two-dimensional diffusion equation, we revealed that temperature dependence of exciton mobility, mu(ex), in hBN/MoSe2/hBN shows a nonsaturating increase at low temperature, which is qualitatively different from those of quantum wells composed of compound semiconductors. The ultraflat structure of monolayer MoSe2 in hBN/MoSe2/hBN probably leads to the suppression of charged-impurity scattering and surface-roughness scattering.
- リンク情報
- ID情報
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- DOI : 10.1103/PhysRevB.102.115424
- ISSN : 2469-9950
- eISSN : 2469-9969
- ORCIDのPut Code : 80678865
- Web of Science ID : WOS:000571391100006