論文

査読有り
2020年9月

Exciton diffusion in hBN-encapsulated monolayer MoSe2

PHYSICAL REVIEW B
  • Takato Hotta
  • ,
  • Shohei Higuchi
  • ,
  • Akihiro Ueda
  • ,
  • Keisuke Shinokita
  • ,
  • Yuhei Miyauchi
  • ,
  • Kazunari Matsuda
  • ,
  • Keiji Ueno
  • ,
  • Takashi Taniguchi
  • ,
  • Kenji Watanabe
  • ,
  • Ryo Kitaura

102
11
記述言語
英語
掲載種別
研究論文(学術雑誌)
DOI
10.1103/PhysRevB.102.115424
出版者・発行元
AMER PHYSICAL SOC

Excitons, quasiparticles composed of an electron and a hole, play an important role in optical responses in low-dimensional nanostructures. In this work, we have investigated exciton diffusion in monolayer MoSe2 encapsulated between flakes of hexagonal boron nitride (hBN/MoSe2/hBN). Through photoluminescence imaging and numerical solution of the two-dimensional diffusion equation, we revealed that temperature dependence of exciton mobility, mu(ex), in hBN/MoSe2/hBN shows a nonsaturating increase at low temperature, which is qualitatively different from those of quantum wells composed of compound semiconductors. The ultraflat structure of monolayer MoSe2 in hBN/MoSe2/hBN probably leads to the suppression of charged-impurity scattering and surface-roughness scattering.

リンク情報
DOI
https://doi.org/10.1103/PhysRevB.102.115424
Web of Science
https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000571391100006&DestApp=WOS_CPL
ID情報
  • DOI : 10.1103/PhysRevB.102.115424
  • ISSN : 2469-9950
  • eISSN : 2469-9969
  • ORCIDのPut Code : 80678865
  • Web of Science ID : WOS:000571391100006

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