2018年4月1日
Reduction in the write error rate of voltage-induced dynamic magnetization switching using the reverse bias method
Japanese Journal of Applied Physics
- ,
- ,
- ,
- ,
- ,
- ,
- ,
- ,
- 巻
- 57
- 号
- 4
- 記述言語
- 英語
- 掲載種別
- 研究論文(学術雑誌)
- DOI
- 10.7567/JJAP.57.040311
- 出版者・発行元
- Japan Society of Applied Physics
Using macro-spin modeling, we studied the reduction in the write error rate (WER) of voltage-induced dynamic magnetization switching by enhancing the effective thermal stability of the free layer using a voltage-controlled magnetic anisotropy change. Marked reductions in WER can be achieved by introducing reverse bias voltage pulses both before and after the write pulse. This procedure suppresses the thermal fluctuations of magnetization in the initial and final states. The proposed reverse bias method can offer a new way of improving the writing stability of voltage-driven spintronic devices.
- リンク情報
- ID情報
-
- DOI : 10.7567/JJAP.57.040311
- ISSN : 1347-4065
- ISSN : 0021-4922
- SCOPUS ID : 85044406109
- Web of Science ID : WOS:000434855800001