URUNO Aya

J-GLOBAL         Last updated: Oct 16, 2018 at 16:31
 
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Name
URUNO Aya
Affiliation
Waseda University
Section
Faculty of Science and Engineering
Research funding number
20801153
ORCID ID
0000-0002-4151-0985

Research Areas

 
 

Academic & Professional Experience

 
Apr 2018
 - 
Today
Waseda University
 
Apr 2017
 - 
Mar 2018
Waseda University
 

Education

 
Apr 2014
 - 
Mar 2017
Department of Electrical Engineering and Bioscience, School of Advanced Science and Engieering, Waseda Univesity
 
Apr 2012
 - 
Mar 2014
Department of Electrical Engineering and Bioscience, School of Advanced Science and Engieering, Waseda Univesity
 
Apr 2008
 - 
Mar 2012
Department of Electrical Engineering and Bioscience, School of Advanced Science and Engieering, Waseda Univesity
 

Published Papers

 
Aya Uruno, Yohei Sakurakawa, Masakazu Kobayashi
Journal of Electronic Materials   47 5730-5734   Oct 2018   [Refereed]
© 2018, The Minerals, Metals & Materials Society. AgGaTe2, AgAlTe2, CuGaTe2, and Ag(Ga,Al)Te2layers were deposited by the close spaced sublimation method. The surface morphology and crystal quality of these Te-based chalcopyrite layers were syst...
Aya Uruno, Masakazu Kobayashi
2017 IEEE 44th Photovoltaic Specialist Conference, PVSC 2017   1-6   May 2018
© 2017 IEEE. The AgGaTe2layer was formed on Ag2Te/Si structure with two different procedures by eliminating the melt-back etching. Diffusion of the Ga2Te3source material into the Ag2Te layer and formation of the AgGaTe2layer were both occurring du...
Yohei Sakurakawa, Aya Uruno, Masakazu Kobayashi
Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics   35 04F106   Jul 2017   [Refereed]
© 2017 American Vacuum Society. Nucleation of Cu-Te layers was performed by the closed space sublimation method using various source materials, source temperatures, and Si substrates with different surface orientations. The objective was to produc...
Aya Uruno, Masakazu Kobayashi
Physica Status Solidi (A) Applications and Materials Science   214 1600284   Jan 2017   [Refereed]
© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim AgGaTe2layers were prepared on Si substrates by a closed space sublimation method using a mixed powder source of Ag2Te and Ga2Te3. Ag2Te buffer layer deposition was introduced to eliminate melt-b...
Shunya Taki, Yuto Umejima, Aya Uruno, Xianfeng Zhang, Masakazu Kobayashi
16th International Conference on Nanotechnology - IEEE NANO 2016   699-702   Nov 2016
© 2016 IEEE. Cu2ZnSn(S,Se)4(CZTSSe) is a compound semiconductor which replaces a part of S in the CZTS crystal by Se. The bandgap varies from 1.05 eV to 1.51 eV depending on the mole ratio between S and Se. In this paper, CZTSSe thin films were pr...

Conference Activities & Talks

 
The Growth of CuGaTe2 Thin Film by Two-step Closed Space Sublimation
Aya Uruno, Masakazu Kobayashi
21st International Conference on Ternary and Multinary Compounds   Sep 2018   
Suppression of Cu2ZnSnS4 Nanoparticle Based Film’s Decomposition during the Selenization
Kota Moriuchi, Shunya Taki, Aya Uruno, Masakazu Kobayashi
The 18th IEEE International Conference on Nanotechnology (IEEE NANO 2018)   Jul 2018   
Preparation of AgGaTe2 Layers on Mo/glass Substrate by Two-step Closed Sublimation and its Application to Solar Cells
Aya Uruno, Masakazu Kobayashi
The 7th edition of the World Conference on Photovoltaic Energy Conversion   Jun 2018   
The Optical Property Characterization of AgGaTe2 Prepared by the Two-Step Closed Space Sublimation
Aya Uruno, Masakazu Kobayashi
The 45th International Symposium on Compound Semiconductors   May 2018   
吉野文也, 宇留野彩, 桜川陽平, 小林正和
電気学会全国大会講演論文集(CD-ROM)   5 Mar 2018