Shuhei Nakata - My portal

Profile Information

Affiliation: Kanazawa Institute of Technology College of Engineering Department of Electrical and Electronic Engineering, Kanazawa Institute of Technology

Degree: 博士(工学)(東京大学)

J-GLOBAL ID: 201701008973144652
researchmap Member ID: 7000020502

Research Interests

Research Areas

Natural sciences / Semiconductors, optical and atomic physics /

Research History

Apr, 1985 - Mar, 2017

三菱電機株式会社先端技術総合研究所
Apr, 2013 - Mar, 2015

副センター長, SiCデバイス開発センター, 三菱電機株式会社先端技術総合研究所

Education

Apr, 1982 - Mar, 1985

The University of Tokyo
Apr, 1980 - Mar, 1983

The University of Tokyo
Apr, 1976 - Mar, 1980

The University of Tokyo

Committee Memberships

Apr, 2007 - Mar, 2008

真空ナノエレクトロニクス第158委員会委員, 独立行政法人日本学術振興会
Apr, 1997 - Mar, 1999

「電磁界問題最適化手法の高度化調査専門委員会」委員, 電気学会
Apr, 1995 - Mar, 1997

「電磁界解析とその逆・最適化問題への応用調査専門委員会」委員, 電気学会
Apr, 1993 - Mar, 1995

「三次元電磁界数値計算実用化技術調査専門委員会」委員, 電気学会

Papers

43

Effect of p-type Contact Resistance of SiC MOSFET on Switching Characteristics

Yui Nagase, Shuhei Nakata, Takaaki Tominaga

Mar, 2023
Impact of Recovery Characteristics on Switching Loss of SiC MOSFETs

Takaaki Tominaga, Toshiaki Iwamatsu, Yukiyasu Nakao, Hiroyuki Amishiro, Hiroshi Watanabe, Naruhisa Miura, Satoshi Yamakawa, Shuhei Nakata

Materials Science Forum, 1062 447-451, May 31, 2022 Peer-reviewedLast author
32

Self-Turn-On Phenomenon of SiC MOSFETs by Fast Switching Operation

Shuhei Nakata, Yuta Sato

Materials Science Forum, 1062 452-457, May 31, 2022 Peer-reviewed
Body Potential Control via p-Type Contact Resistance and Its Influence on Switching Characteristics of 4H-SiC MOSFETs

Takaaki Tominaga, Toshiaki Iwamatsu, Yukiyasu Nakao, Hiroyuki Amishiro, Hiroshi Watanabe, Shingo Tomohisa, Naruhisa Miura, Shuhei Nakata

IEEE Transactions on Electron Devices, 69(1) 285-290, Jan, 2022 Peer-reviewedLast author
49

Verification of a 10MHz boost chopper using SiC-MOSFET

Yoshimasa Takaku, Yoshida Hayato, Shuhei Nakata

Mar, 2021
Influence of recovery characteristics on switching behavior of SiC MOSFETs

Takaaki Tominaga, Toshiaki Iwamatsu, Yukiyasu Nakao, Hiroyuki Amishiro, Hiroshi Watanabe, Naruhisa Miura, Satoshi Yamakawa, Shuhei Nakata

Japanese Journal of Applied Physics, 59(8) 084003-084003, Jul 30, 2020 Peer-reviewedLast author
SiC-MOSFET向け10MHz駆動回路の検証

高久佳雅, 中田修平

令和二年電気学会全国大会講演論文集, Mar, 2020
Temperature Dependence of dV/dt Impact on the SiC-MOSFET

NAKATA SHUHEI, Shota Tanan

Materials Science Forum, 963 596-599, Jul, 2019 Peer-reviewed
emperature Dependence of Gate Voltage to suppress the self turn-on of SiC-MOSFET induced by dV/dt stress.

NAKATA SHUHEI

Aug, 2018
The harmful effect of dV/dt stress on the SiC-MOSFET

NAKATA SHUUHEI, TANAKA SHOTA

2018 Annual Meeting Record I.E.E.Japan, Mar, 2018
Impact of embedding schottky barrier diodes into 3.3 kv and 6.5 kv SiC MOSFETs

Koutarou Kawahara, Shiro Hino, Koji Sadamatsu, Yukiyasu Nakao, Toshiaki Iwamatsu, Shuhei Nakata, Shingo Tomohisa, Satoshi Yamakawa

Materials Science Forum, 924 663-666, 2018 Peer-reviewed
6.5 kV schottky-barrier-diode-embedded SiC-MOSFET for compact full-unipolar module

Koutarou Kawahara, Shiro Hino, Koji Sadamatsu, Yukiyasu Nakao, Yusuke Yamashiro, Yasuki Yamamoto, Toshiaki Iwamatsu, Shuhei Nakata, Shingo Tomohisa, Satoshi Yamakawa

Proceedings of the International Symposium on Power Semiconductor Devices and ICs, 41-44, 2017 Peer-reviewed
Demonstration of SiC-MOSFET embedding Schottky barrier diode for inactivation of parasitic body diode

S. Hino, H. Hatta, K. Sadamatsu, Y. Nagahisa, S. Yamamoto, T. Iwamatsu, Y. Yamamoto, M. Imaizumi, S. Nakata, S. Yamakawa

Materials Science Forum, 897 477-482, 2017 Peer-reviewed
The Effect of Incomplete Ionization on SiC Devices during High Speed Switching

Kohei Ebihara, Kotaro Kawahara, Hiroshi Watanabe, NAKATA SHUUHEI, Satoshi Yamakawa

Materials Science Forum, 897 467-470, 2017 Peer-reviewed
Analysis of effect of gate oxidation at SiC MOS interface on threshold-voltage shift using deep-level transient spectroscopy

Junichi Hasegawa, Munetaka Noguchi, Masayuki Furuhashi, Shuhei Nakata, Takayuki Iwasaki, Tetsuo Kodera, Tadashi Nishimura, Mutsuko Hatano

JAPANESE JOURNAL OF APPLIED PHYSICS, 54(4) 04DP05-1-04DP05-6, Apr, 2015 Peer-reviewed
3.3 kV/1500A power modules for the world's first all-SiC traction inverter

Kenji Hamada, Shiro Hino, Naruhisa Miura, Hiroshi Watanabe, Shuhei Nakata, Eisuke Suekawa, Yuji Ebiike, Masayuki Imaizumi, Isao Umezaki, Satoshi Yamakawa

JAPANESE JOURNAL OF APPLIED PHYSICS, 54(4) 04DP07-1-04DP07-4, Apr, 2015 Peer-reviewed
Accuracy of the energy distribution of the interface states at the SiO2/SiC interface by conductance method

Noguchi, Iwamatsu, Amishiro, Watanabe, NAKATA SHUUHEI, Kuroiwa, Yamakawa

Materials Science Forum, 858 437-440, 2015 Peer-reviewed
Shallow and deep levels in Al+-implanted p-type 4H-SiC measured by thermal admittance spectroscopy

K. Kawahara, H. Watanabe, N. Miura, S. Nakata, S. Yamakawa

Materials Science Forum, 821-823 403-406, 2015 Peer-reviewed
Driving Force of Stacking Fault Expansion in 4H-SiC PN Diode studied by in situ Electroluminescence Imaging

Kazuya Konishi, Shigehisa Yamamoto, Shuhei Nakata, Yoshihiko Toyoda, Satoshi Yamakawa

SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, 778-780 342-345, 2014
Characterization of SiO2/4H-SiC interface by device simulation and temperature dependence of on-resistance of SiC MOSFET

K. Ohtsuka, S. Hino, A. Nagae, R. Tanaka, Y. Kagawa, N. Miura, S. Nakata

SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2, 778-780 993-996, 2014 Peer-reviewed

Misc.

Inrush Current Effects on SiC-MOSFETs for LLC Converter

TAKAKU Yoshimasa, NAKATA Shuhei

Technical Program and Abstracts of ICSCRM2019, 2019
Temperature Dependence of Dv/Dt Impact on the SiC-MOSFET

NAKATA Shuhei

European Conference on Silicon Carbide & Related Materials, 2018
Report on FED/CRT Presentations : Report on SID'04

NAKATA Shuhei

ITE technical report, 28(36) 39-42, Jul 9, 2004
Report on FED/CRT Presentations : Report on SID'04

NAKATA Shuhei

IEICE technical report. Electronic information displays, 104(172) 39-42, Jul 2, 2004
30P-p-6 Beam Induced Magnetic Field Effect on the Injected Low Energy Beam

Nakata Shuhei

47(1) 60-60, Mar 12, 1992
28a-SA-13 Design of the Injection System by Half Resonance to the Compact Strage Ring

NAKATA Shuhei, TSUKISHIMA Chihiro

44(1) 51-51, Mar 28, 1989

Presentations

emperature Dependence of Gate Voltage to suppress the self turn-on of SiC-MOSFET induced by dV/dt stress.

NAKATA SHUHEI

Aug, 2018
Development of High Voltage SiC Devices and Its Applications

NAKATA Shuhei

International SiC Power Electronics Application Workshop, 2016 Invited
Development of SiC power devices for future power electronics applications

NAKATA Shuhei

International SiC Power Electronics Application Workshop., 2015 Invited

Professional Memberships

Research Projects

SiC-MOSFETの超高速駆動時の接触抵抗の影響評価と高効率電力変換効率の実証

科学研究費助成事業, 基盤研究(C), 日本学術振興会, Apr, 2022 - Mar, 2025

中田修平