- Trans Tech Publications Ltd
High speed switching circuits using SiC power device have been developed for downsizing of electric products. The high speed switching leads to the rapid changing of the drain voltage (dV/dt). This paper reports the effects of the dV/dt impact on the self-turn-on and the characteristics of SiC-MOSFET. The results shows that the gate bias voltage to suppress the self-turn-on is negatively correlated with the temperature. And it is also found that the dV/dt impact breaks down the gate source insulation and the dV/dt value to the breakdown is positively correlated with the temperature.