MISC

2019年

Inrush Current Effects on SiC-MOSFETs for LLC Converter

Technical Program and Abstracts of ICSCRM2019
  • TAKAKU Yoshimasa
  • ,
  • NAKATA Shuhei

記述言語
英語
掲載種別
研究発表ペーパー・要旨(国際会議)
出版者・発行元
ICSCRM2019 Organizing Committee.

We prototyped an LLC converter using SiC-MOSFET and GaN-FET to study the device dependence of the resonant type converter characteristics and the high current effects on the devices during the start-up mode.
Under the steady state operation, no difference in current and voltage waveform between the SiC-MOSFET and GaN-FET are observed and the energy conversion efficiency is over 96% regardless of which device is used.

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