中田修平 (Shuhei Nakata) - 論文

Koutarou Kawahara, Shiro Hino, Koji Sadamatsu, Yukiyasu Nakao, Yusuke Yamashiro, Yasuki Yamamoto, Toshiaki Iwamatsu, Shuhei Nakata, Shingo Tomohisa, Satoshi Yamakawa

Proceedings of the International Symposium on Power Semiconductor Devices and ICs 41-44 2017年査読有り

Demonstration of SiC-MOSFET embedding Schottky barrier diode for inactivation of parasitic body diode

S. Hino, H. Hatta, K. Sadamatsu, Y. Nagahisa, S. Yamamoto, T. Iwamatsu, Y. Yamamoto, M. Imaizumi, S. Nakata, S. Yamakawa

Materials Science Forum 897 477-482 2017年査読有り

The Effect of Incomplete Ionization on SiC Devices during High Speed Switching

Kohei Ebihara, Kotaro Kawahara, Hiroshi Watanabe, NAKATA SHUUHEI, Satoshi Yamakawa

Materials Science Forum 897 467-470 2017年査読有り

Analysis of effect of gate oxidation at SiC MOS interface on threshold-voltage shift using deep-level transient spectroscopy

Junichi Hasegawa, Munetaka Noguchi, Masayuki Furuhashi, Shuhei Nakata, Takayuki Iwasaki, Tetsuo Kodera, Tadashi Nishimura, Mutsuko Hatano

JAPANESE JOURNAL OF APPLIED PHYSICS 54(4) 04DP05-1-04DP05-6 2015年4月査読有り

3.3 kV/1500A power modules for the world's first all-SiC traction inverter

Kenji Hamada, Shiro Hino, Naruhisa Miura, Hiroshi Watanabe, Shuhei Nakata, Eisuke Suekawa, Yuji Ebiike, Masayuki Imaizumi, Isao Umezaki, Satoshi Yamakawa

JAPANESE JOURNAL OF APPLIED PHYSICS 54(4) 04DP07-1-04DP07-4 2015年4月査読有り

Accuracy of the energy distribution of the interface states at the SiO2/SiC interface by conductance method

Noguchi, Iwamatsu, Amishiro, Watanabe, NAKATA SHUUHEI, Kuroiwa, Yamakawa

Materials Science Forum 858 437-440 2015年査読有り

Shallow and deep levels in Al+-implanted p-type 4H-SiC measured by thermal admittance spectroscopy

K. Kawahara, H. Watanabe, N. Miura, S. Nakata, S. Yamakawa

Materials Science Forum 821-823 403-406 2015年査読有り

Driving Force of Stacking Fault Expansion in 4H-SiC PN Diode studied by in situ Electroluminescence Imaging

Kazuya Konishi, Shigehisa Yamamoto, Shuhei Nakata, Yoshihiko Toyoda, Satoshi Yamakawa

SILICON CARBIDE AND RELATED MATERIALS 2013, PTS 1 AND 2 778-780 342-345 2014年

Characterization of SiO2/4H-SiC interface by device simulation and temperature dependence of on-resistance of SiC MOSFET

K. Ohtsuka, S. Hino, A. Nagae, R. Tanaka, Y. Kagawa, N. Miura, S. Nakata