論文

査読有り
2015年

Accuracy of the energy distribution of the interface states at the SiO2/SiC interface by conductance method

Materials Science Forum
  • Noguchi, Iwamatsu
  • ,
  • Amishiro
  • ,
  • Watanabe
  • ,
  • NAKATA SHUUHEI
  • ,
  • Kuroiwa
  • ,
  • Yamakawa

858
開始ページ
437
終了ページ
440
記述言語
英語
掲載種別
研究論文(学術雑誌)
出版者・発行元
Trans Tech Publications, Switzerland

The electrical characteristics of the SiC MOSFET have been limited by large amount of states at the SiO2/SiC interface. In this study, the accuracy of the energy level of the interface states extracted by hypothetical high frequency extreme, which is conventionally used, is experimentally examined. It is demonstrated that conductance method at 65K enables us more accurate evaluation of the interface states at the SiO2/SiC interface and found that the interface states density (Dit) of nitride SiO2/SiC interface is over 1013 cm-2eV-1 at energy level of 0.1 eV below the conduction band edge.

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