論文

査読有り
2019年7月

Temperature Dependence of dV/dt Impact on the SiC-MOSFET

Materials Science Forum
  • NAKATA SHUHEI
  • ,
  • Shota Tanan

963
開始ページ
596
終了ページ
599
記述言語
英語
掲載種別
研究論文(学術雑誌)
出版者・発行元
Trans Tech Publications

The high speed switching of the SiC-MOSFET leads to the rapid changing of the drain voltage (dV/dt) during the switching period. This paper reports the effects of the dV/dt impact on the self-turn-on and the characteristics of SiC-MOSFET, especially the temperature dependence. The results shows that the gate bias voltage to suppress the self-turn-on is negatively correlated with the temperature. And it is also found that the dV/dt impact breaks down the gate source insulation and the dV/dt value to the breakdown is positively correlated with the temperature.

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