Shuhei Nakata - Papers

SiC-MOSFET向け10MHz駆動回路の検証

高久佳雅, 中田修平

令和二年電気学会全国大会講演論文集, Mar, 2020

Temperature Dependence of dV/dt Impact on the SiC-MOSFET

NAKATA SHUHEI, Shota Tanan

Materials Science Forum, 963 596-599, Jul, 2019 Peer-reviewed

emperature Dependence of Gate Voltage to suppress the self turn-on of SiC-MOSFET induced by dV/dt stress.

NAKATA SHUHEI

Aug, 2018

The harmful effect of dV/dt stress on the SiC-MOSFET

NAKATA SHUUHEI, TANAKA SHOTA

2018 Annual Meeting Record I.E.E.Japan, Mar, 2018

6.5 kV schottky-barrier-diode-embedded SiC-MOSFET for compact full-unipolar module

Koutarou Kawahara, Shiro Hino, Koji Sadamatsu, Yukiyasu Nakao, Yusuke Yamashiro, Yasuki Yamamoto, Toshiaki Iwamatsu, NAKATA SHUUHEI, Shingo Tomohisa, Satoshi Yamakawa

29th International Symposium on Power Semiconductor Devices and IC's (ISPSD), 2017 Peer-reviewed

Demonstration of SiC-MOSFET embedding Schottky barrier diode for inactivation of parasitic body diode

S. Hino, H. Hatta, K. Sadamatsu, Y. Nagahisa, S. Yamamoto, T. Iwamatsu, Y. Yamamoto, M. Imaizumi, S. Nakata, S. Yamakawa

Materials Science Forum, 897 477-482, 2017 Peer-reviewed

The Effect of Incomplete Ionization on SiC Devices during High Speed Switching

Kohei Ebihara, Kotaro Kawahara, Hiroshi Watanabe, NAKATA SHUUHEI, Satoshi Yamakawa

Materials Science Forum, 897 467-470, 2017 Peer-reviewed

Accuracy of the energy distribution of the interface states at the SiO2/SiC interface by conductance method

Noguchi, Iwamatsu, Amishiro, Watanabe, NAKATA SHUUHEI, Kuroiwa, Yamakawa

Materials Science Forum, 858 437-440, 2015 Peer-reviewed

Analysis of effect of gate oxidation at SiC MOS interface on threshold-voltage shift using deep-level transient spectroscopy

Hasegawa, Noguchi, Furuhashi, NAKATA SHUUHEI, Iwasaki, Kodera, Nishimura, Hatano

Jpn. J. Appl. Phys., 54 04DP05-1-04DP05-6, 2015 Peer-reviewed

3.3 kV/1500A power modules for the world's first all-SiC traction inverter

Kenji Hamada, Shiro Hino, Naruhisa Miura, Hiroshi Watanabe, NAKATA SHUUHEI, Eisuke Suekawa, Yuji Ebiike, Masayuki Imaizumi, Isao Umezaki, Satoshi Yamakawa

Japanese Journal of Applied Physics, 54 04DP07-1-04DP07-4, 2015 Peer-reviewed

Shallow and deep levels in Al+-implanted p-type 4H-SiC measured by thermal admittance spectroscopy

K. Kawahara, H. Watanabe, N. Miura, S. Nakata, S. Yamakawa

Materials Science Forum, 821-823 403-406, 2015 Peer-reviewed

Driving Force of Stacking Fault Expansion in 4H-SiC PN Diode studied by in situ Electroluminescence Imaging

Konishi, Yamamoto, NAKATA SHUUHEI, Toyoda, Yamakawa

Materials Science Forum, 778-780 342-345, 2014

Characterization of SiO2/4H-SiC interface by device simulation and temperature dependence of on-resistance of SiC MOSFET

Ohtsuka, Hino, Nagae, Tanaka, Kagawa, Miura, NAKATA SHUUHEI

Materials Science Forum, 778-780 993-996, 2014 Peer-reviewed

Suppression of Forward Voltage Degradation of the Body Diode

Yamamot, Nakao, Tomita, NAKATA SHUUHEI, Yamakawa