Togashi Rie

J-GLOBAL         Last updated: Feb 26, 2019 at 03:08
 
Avatar
Name
Togashi Rie
Affiliation
Sophia University
Section
Faculty of Science and Technology, Department of Engineering and Applied Sciences
Job title
Assistant Professor
Research funding number
50444112

Research Areas

 
 

Awards & Honors

 
Nov 2015
Young Researcher Award, The 1st International Workshop on Gallium Oxide and Related Materials 2015
 

Published Papers

 
Comparison of O2 and H2O as oxygen source for homoepitaxial growth of β-Ga2O3 layers by halide vapor phase epitaxy
Keita Konishi, Ken Goto, Rie Togashi, Hisashi Murakami, Masataka Higashiwaki, Akito Kuramata, Shigenobu Yamakoshi, Bo Monemar, Yoshinao Kumagai
Journal of Crystal Growth   492 39-44   Jun 2018   [Refereed]
N.T. Son, K. Goto, K. Nomura, Q. T. Thieu, R. Togashi, H. Murakami, Y. Kumagai, A. Kuramata, M. Higashiwaki, A. Koukitu, S. Yamakoshi, B. Monemar and E. Janzén
Journal of Applied Physics   120(23) 235703-1-235703-8   Dec 2016   [Refereed]
Electron paramagnetic resonance was used to study the donor that is responsible for the n-type conductivity in unintentionally doped (UID) b-Ga2O3 substrates. We show that in as-grown materials, the donor requires high temperature annealing to be ...
Thermal and chemical stability of group-III sesquioxides in a flow of either N2 or H2
Rie Togashi, Yumi Kisanuki, Ken Goto, Hisashi Murakami, Akito Kuramata, Shigenobu Yamakoshi, Bo Monemar, Akinori Koukitu, and Yoshinao Kumagai
Japanese Journal of Applied Physics   55(12) 1202BE-1-1202BE-6   Nov 2016   [Refereed]
The thermal and chemical stabilities of group-III sesquioxides (Al2O3, Ga2O3, and In2O3) were comparatively investigated at an atmospheric pressure at heat treatment temperatures ranging from 250 to 1450 °C in a flow of either N2 or H2. In a flow ...
High rate growth of In2O3 at 1000 ºC by halide vapor phase epitaxy,
Rie Togashi, Shiyu Numata, Mayuko Hayashida, Takayuki Suga, Ken Goto, Akito Kuramata, Shigenobu Yamakoshi, Plamen Paskov, Bo Monemar, and Yoshinao Kumagai
Japanese Journal of Applied Physics   55(12) 1202B3-1-1202B3-5   Oct 2016   [Refereed]
In this work, the first-ever growth of cubic-In2O3 at 1000 °C by halide vapor phase epitaxy (HVPE) was achieved, using gaseous InCl and O2 as precursors in a N2 flow. The growth rates of In2O3 layers on (001) β-Ga2O3 and (0001) sapphire substrates...
Tri-halide vapor phase epitaxy of thick GaN using gaseous GaCl3 precursor
Hisashi Murakami, Nao Takekawa, Anna Shiono, Quang Tu Thieu, Rie Togashi, Yoshinao Kumagai, Koh Matsumoto, Akinori Koukitu
Journal of Crystal Growth   456(15) 140-144   Aug 2016   [Refereed]
Tri-halide vapor phase epitaxy (THVPE) of thick GaN using GaCl3 was investigated for fabricating low-cost, high-crystalline-quality GaN substrates instead of the conventional manufacturing method of GaCl-based hydride vapor phase epitaxy (HVPE). T...

Conference Activities & Talks

 
Influence of ambient oxygen on Si incorporation during hydride vapor phase epitaxy of AlN at high temperature
Keita Konishi, Reo Yamamoto, Rie Togashi, Toru Nagashima, Rafael Dalmau, Raoul Schlesser, Hisashi Murakami, Ramón Collazo, Bo Monemar, Zlatko Sitar, and Yoshinao Kumagai
11th International Symposium on Semiconductor Light Emitting Devices (ISSLED 2017)   10 Oct 2017   ISSLED
Development of bulk AlN substrates for deep-UV optoelectronic devices by HVPE method [Invited]
Yoshinao Kumagai, Rie Togashi, Toru Nagashima, Toru Kinoshita, Reo Yamamoto, Rafael Dalmau, Raoul Schlesser, Hisashi Murakami, Ramón Collazo, Akinori Koukitu, Bo Monemar, and Zlatko Sitar
11th International Symposium on Semiconductor Light Emitting Devices (ISSLED 2017)   10 Oct 2017   ISSLED
Halide Vapor Phase Epitaxy of β-Ga2O3 Homoepitaxial Layers Using O2 and H2O as Oxygen Sources [Invited]
K. Konishi, K. Goto, R. Togashi, H. Murakami, M. Higashiwaki, A. Kuramata, S. Yamakoshi, B. Monemar, and Y. Kumagai
2nd International Workshop on Ga2O3 and Related Materials (IWGO 2017)   15 Sep 2017   IWGO
Influence of Growth Rate on Halide Vapor Phase Epitaxy of c-In2O3 on c-Plane Sapphire Substrates
T. Suga, H. Nakahata, K. Konishi, R. Togashi, H. Murakami, P. P. Paskov, B. Monemar, and Y. Kumagai
2nd International Workshop on Ga2O3 and Related Materials (IWGO 2017)   15 Sep 2017   IWGO
Electronic properties of residual donor in unintentionally doped β-Ga2O3
N. T. Son, K. Goto, R. Togashi, H. Murakami, Y. Kumagai, A. Kuramata, M. Higashiwaki, S. Yamakoshi, and B. Monemar
2nd International Workshop on Ga2O3 and Related Materials (IWGO 2017)   14 Sep 2017   IWGO