論文

査読有り
2014年11月

The Si/CdTe semiconductor Compton camera of the ASTRO-H Soft Gamma-ray Detector (SGD)

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT
  • Shin Watanabe
  • Hiroyasu Tajima
  • Yasushi Fukazawa
  • Yuto Ichinohe
  • Shin'ichiro Takeda
  • Teruaki Enoto
  • Taro Fukuyama
  • Shunya Furui
  • Kei Genba
  • Kouichi Hagino
  • Atsushi Harayama
  • Yoshikatsu Kuroda
  • Daisuke Matsuura
  • Ryo Nakamura
  • Kazuhiro Nakazawa
  • Hirofumi Noda
  • Hirokazu Odaka
  • Masayuki Ohta
  • Mitsunobu Onishi
  • Shinya Saito
  • Goro Sato
  • Tamotsu Sato
  • Tadayuki Takahashi
  • Takaaki Tanaka
  • Atsushi Togo
  • Shinji Tomizuka
  • 全て表示

765
開始ページ
192
終了ページ
201
記述言語
英語
掲載種別
研究論文(学術雑誌)
DOI
10.1016/j.nima.2014.05.127
出版者・発行元
ELSEVIER SCIENCE BV

The Soft Gamma-ray Detector (SGD) is one of the instrument payloads onboard ASTRO-H, and will cover a wide energy band (60-600 key) at a background level 10 times better than instruments currently in orbit. The SGD achieves low background by combining a Compton camera scheme with a narrow field-of-view active shield. The Compton camera in the SGD is realized as a hybrid semiconductor detector system which consists of silicon and cadmium telluride (CcITe) sensors. The design of the SGD Compton camera has been finalized and the final prototype, which has the same configuration as the flight model, has been fabricated for performance evaluation. The Compton camera has overall dimensions of 12 cm x 12 cm x 12 cm, consisting of 32 layers of Si pixel sensors and 8 layers of CdTe pixel sensors surrounded by 2 layers of CcITe pixel sensors. The detection efficiency of the Compton camera reaches about 15% and 3% for 100 keV and 511 keV gamma rays, respectively. The pixel pitch of the Si and CdTe sensors is 3.2 mm, and the signals from all 13,312 pixels are processed by 208 ASlCs developed for the SGD. Good energy resolution is afforded by semiconductor sensors and low noise ASlCs, and the obtained energy resolutions with the prototype Si and CciTe pixel sensors are 1020 keV (RNHM) at 60 keV and 1.6-2.5 keY (RNHN1) at 122 keV, respectively. This results in good background rejection capability due to better constraints on Compton kinematics. Compton camera energy resolutions achieved with the final prototype are 6.3 keY (RNHN1) at 356 keV and 10.5 keV (ENVHM) at 662 keV, which satisfy the instrument requirements for the SGD Compton camera (better than 2%) Moreover, a low intrinsic background has been confirmed by the background measurement with the final prototype. (C) 2014 Elsevier B.V. All rights reserved.

リンク情報
DOI
https://doi.org/10.1016/j.nima.2014.05.127
Web of Science
https://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=JSTA_CEL&SrcApp=J_Gate_JST&DestLinkType=FullRecord&KeyUT=WOS:000344621000036&DestApp=WOS_CPL
ID情報
  • DOI : 10.1016/j.nima.2014.05.127
  • ISSN : 0168-9002
  • eISSN : 1872-9576
  • Web of Science ID : WOS:000344621000036

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