Namatame Hirofumi

J-GLOBAL         Last updated: Dec 7, 2018 at 04:13
Namatame Hirofumi
Hiroshima University
Research funding number

Published Papers

Narita, H; Nakatake, M; Xie, T; Moko, T; Kimura, A; Qiao, S; Namatame, H; Taniguchi, M
We have applied scanning tunneling microscopy (STM), scanning tunneling spectroscopy (STS) as well as current imaging tunneling spectroscopy (CITS)(1)) to an Al nanocluster periodic(-) array of a submonolayer-Al/Si(111) system. These clusters beco...
Iwasawa, H; Yamakawa, K; Saitoh, T; Inaba, J; Katsufuji, T; Higashiguchi, M; Shimada, K; Namatame, H; Taniguchi, M
PHYSICAL REVIEW LETTERS   96(6)    Feb 2006   [Refereed]
We present the electronic structure of Sr1-(x+y)Lax+yTi1-xCrxO3 investigated by high-resolution photoemission spectroscopy. In the vicinity of the Fermi level, it was found that the electronic structure was composed of a Cr 3d local state with the...
Shimada, K.; Higashiguchi, M.; Fujimori, S. -I.; Saitoh, Y.; Fujimori, A.; Namatame, H.; Taniguchi, M.; Sasakawa, T.; Takabatake, T.
PHYSICA B-CONDENSED MATTER   383(1) 140-141   Aug 2006   [Refereed]
High-resolution resonance-photoemission spectroscopy has been performed on the Ce1-xLaxRhAs (0 <= x <= 0.05) single crystal to elucidate a collapse of the energy gap in the Kondo semiconductor CeRhAs by La substitution. With increasing x, the spec...
Arita, Masashi; Sato, Hitoshi; Higashi, Masayuki; Yoshikawa, Kunta; Shimada, Kenya; Sawada, Masahiro; Ueda, Yuko; Namatame, Hirofumi; Taniguchi, Masaki; Fujiomori, Sin-Ichi et al.
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN   76(7)    Jul 2007   [Refereed]
We have performed the O 1s x-ray absorption (XAS) and resonant inverse photoemission spectroscopy (RIPES) in Mott insulator YTiO3, band insulator CaTiO3 and Y0.61Ca0.39TiO3 with a metal-insulator transition. In CaTiO3, the spectrum has strong pi* ...
Hirahara, T.; Miyamoto, K.; Kimura, A.; Niinuma, Y.; Bihlmayer, G.; Chulkov, E. V.; Nagao, T.; Matsuda, I.; Qiao, S.; Shimada, K. et al.
NEW JOURNAL OF PHYSICS   10    Aug 2008   [Refereed]
Following our previous work (Hirahara T et al 2007 Phys. Rev. B 76 153305), we have performed spin- and angle-resolved photoemission measurements at similar to 120K on ultrathin Bi films grown on a Si substrate, focusing on the split surface-state...


Direct observation of the Ce 4f states in the Kondo semiconductor CeRhAs and related compounds:A high-resolution resonant photoemission study
Phys. Rev. B   66    Apr 2002
Photoemission Study of Ultra Shallow Junctions Formed on Si(100) by Arsenic Ion Implantation
2001 Intern. Conf. on Rapid Thermal Processing for Future Semiconductor Devices (Ise-shima= Nov. 14-16= 2001)      Apr 2001
Characterization on As+ Heavily-Implanted Layer on Si(100) by X-ray Photoelectron Spectroscopy
The 6th Hiroshima International Symposium on Synchrotron Radiation      Apr 2001
Characterization on As+ Heavily-Implanted Layer on Si(100) by X-ray Photoelectron Spectroscopy
6th Hiroshima Intern. Symp. on Synchrotron Radiation (Higashi-Hiroshima= March 14= 2002)      Apr 2002
Photoelectron Spectroscopy of Ultrathin Yttrium Oxide Films on Silicon
7th Hiroshima Intern. Symp. on Synchrotron Radiation (Higashi-Hiroshima= March 13-14= 2003)   218   Apr 2003