NAVARRO DONDEE SERVEZA

My research is focused on the development of “compact models” for semiconductor devices such as MOSFET, high-voltage MOS (HVMOS), super-junction (SJMOS) and IGBT. The compact models are used in simulating circuits to predict circuit performance and to aid in circuit design optimization. To support the development of compact models, my work also involves device simulations using TCAD software to determine the physical phenomena behind the operation of the devices.On-wafer measurements of the device DC and AC characteristics are also performed. Our group in HiSIM Research Center has developed standard compact models for MOSFET, HVMOS, SOI and SOTB devices, which are used in the electronics industry. We are also developing models for high-voltage and high-power devices employing SiC material.