田部井哲夫 (TETSUO TABEI) - マイポータル

Influence of the Gate Voltage or the Base Pair Ratio Modulation on the A-DNA FET Performance

Matsuo, Naoto, Heya, Akira, Yamana, Kazushige, Sumitomo, Koji, Tabei, Tetsuo

IEICE TRANSACTIONS ON ELECTRONICS E107C(3) 76-79 2024年3月査読有り

Integrated Fabrication Process of Si Microcantilever Using TMAH Solution With Planar Mask

Aprilia, Lia, Meguro, Tatsuya, Nuryadi, Ratno, Tabei, Tetsuo, Mimura, Hidenori, Kuroki, Shin-Ichiro

JOURNAL OF MICROELECTROMECHANICAL SYSTEMS 32(3) 290-296 2023年6月査読有り

Ambipolar Conduction of lambda-DNA Transistor Fabricated on SiO2/Si Structure

Matsuo, Naoto, Yoshida, Kazuki, Sumitomo, Koji, Yamana, Kazushige, Tabei, Tetsuo

IEICE TRANSACTIONS ON ELECTRONICS E105C(8) 369-374 2022年8月査読有り

軟X線照射によるDNAの放射線損傷の解析

吉田一輝, 松尾直人, 山名一成, 住友弘二, 部家彰, 原田哲男, 田部井哲夫

電子情報通信学会論文誌 J105-C(2) 74-77 2022年2月査読有り

Long annealing effect on spin Seebeck devices fabricated using CexY3-xFe5O12 deposited by metal-organic decomposition

Ono, Tatsuyoshi, Hirata, Satoshi, Amemiya, Yoshiteru, Tabei, Tetsuo, Yokoyama, Shin

JAPANESE JOURNAL OF APPLIED PHYSICS 57(4) 2018年4月査読有り

Anomalous Nernst effect of Ni-Al alloys and application to spin Seebeck devices

Ono, Tatsuyoshi, Hirata, Satoshi, Amemiya, Yoshiteru, Tabei, Tetsuo, Yokoyama, Shin

JAPANESE JOURNAL OF APPLIED PHYSICS 57(4) 2018年4月査読有り

Fullerene-Containing Electrically Conducting Electron Beam Resist for Ultrahigh Integration of Nanometer Lateral-Scale Organic Electronic Devices

Anri Nakajima, Tetsuo Tabei, Tatsuya Yasukawa

SCIENTIFIC REPORTS 7 2017年6月査読有り

Influence of surface smoothing on spin Seebeck effect of Ce1Y2Fe5O12 deposited by metal organic decomposition

Hirata, Satoshi, Ono, Tatsuyoshi, Amemiya, Yoshiteru, Tabei, Tetsuo, Yokoyama, Shin

JAPANESE JOURNAL OF APPLIED PHYSICS 56(4) 2017年4月査読有り

Proposal of a silicon optical modulator based on surface plasmon resonance

T. Tabei, S. Yokoyama

SILICON PHOTONICS AND PHOTONIC INTEGRATED CIRCUITS III 8431 2012年

Potentiality of Metal-Oxide-Semiconductor Silicon Optical Modulator Based on Free Carrier Absorption

Tabei, Tetsuo, Hirata, Tomoki, Kajikawa, Kenta, Sunami, Hideo

JAPANESE JOURNAL OF APPLIED PHYSICS 48(11) 2009年11月査読有り

Fabrication of Si Nanowire Field-Effect Transistor for Highly Sensitive, Label-Free Biosensing

Takashi Kudo, Toshihiro Kasama, Takeshi Ikeda, Yumehiro Hata, Shiho Tokonami, Shin Yokoyama, Takamaro Kikkawa, Hideo Sunami, Tomohiro Ishikawa, Masato Suzuki …

JAPANESE JOURNAL OF APPLIED PHYSICS 48(6) 2009年6月査読有り

An Infrared Silicon Optical Modulator of Metal-Oxide-Semiconductor Capacitor Based on Accumulation-Carrier Absorption

Kenta Kajikawa, Tetsuo Tabei, Hideo Sunami

JAPANESE JOURNAL OF APPLIED PHYSICS 48(4) 2009年4月査読有り

Proposal of a metal-oxide-semiconductor silicon optical modulator based on inversion-carrier absorption

Tomoki Hirata, Kenta Kajikawa, Tetsuo Tabei, Hideo Sunami

JAPANESE JOURNAL OF APPLIED PHYSICS 47(4) 2906-2909 2008年4月査読有り

Fabrication of spin-coated optical waveguides for optically interconnected LSI and influence of fabrication process on underlying metal-oxide-semiconductor capacitors

T Tabei, K Maeda, S Yokoyama, H Sunami

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 45(4B) 3498-3503 2006年4月査読有り

Fabrication of high-density diamond nanotips by electron beam lithography

T Tabei, T Miyazaki, Y Nishibayashi, S Yokoyama

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 45(3A) 1771-1774 2006年3月査読有り

Mobility and number fluctuations in MOS structures

S Hamayoshi, T Nakamoto, M Wada, K Ohkura, T Tabei, M Ikeda, K Higuchi

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 44(4B) 2198-2200 2005年4月査読有り

Evaluation of front-opening unified pod with attached UV/photocatalyst cleaning unit

M Suzuki, T Tabei, S Yokoyama, K Miyamoto, T Wada, T Fujii

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS 44(2) 1130-1131 2005年2月査読有り

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